Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 138 (Mar. 2008), p. 367-376
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
To investigate the influence of stress on reactive diffusion, a remarkably clear experimenthas been designed. Thin film Al/Cu/Al and Cu/Al/Cu triple layers are deposited on curvedsubstrates of 25 nm radius and investigated by atom probe tomography. Due to the specificgeometry, the excess volume of the reaction product induces compressive and dilatational stress onopposite sides of the product layer, even in the case of semi-coherent or incoherent interphaseboundaries. The resulting stress gradient leads to additional driving force, which accelerates ordecelerates the reaction rate in dependence on the stacking sequence of the layer material. Byquantitative analysis, the induced level of stress can be quantified from the modified growth rate ofthe product
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.138.367.pdf
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