ISSN:
1662-0356
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Natural Sciences in General
,
Technology
Notes:
Very high (k〉25) permittivity materials have been investigated as a second step high-kgate insulator. These are all formed by adding other materials to the basic HfO2. Hafnium titanatethin films were deposited by chemical vapor deposition (CVD). It was observed that both theinterfacial layer (IL) EOT and the permittivity increase with Ti content and that films with higher Ticontent are also more immune to crystallization. Permittivities as high as 50 were achieved. In theMOSFET devices with the hafnium titanate films, normal transistor characteristics were observed,including electron mobility degradation. In SrHfO3 films, deposited by physical vapor deposition(PVD), a permittivity as high as 35 was achieved. These films appear to be highly stable upon hightemperature annealing, but show a thick, anomalous interfacial layer
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/42/transtech_doi~10.4028%252Fwww.scientific.net%252FAST.45.1342.pdf
