ISSN:
1432-0630
Keywords:
71.65
;
73.40.Lq
;
73.60.Fw
;
78.70.Bj
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The sensitivity of the positron to the internal electric fields in good quality thin (≈100 nm) Molecular Beam Epitaxy (MBE)-grown layers is experimentally demonstrated. Both a thin intrinsic layer grown on a p-type substrate and a highly n-doped δ profile buried in intrinsic silicon form effective barriers to positron diffusion although no defects can be detected. We also extract, from a full treatment of the positron diffusion, a quantitative estimate of the concentration, below the detection limits of other methods, of large vacancy clusters in a thick (680 nm) film.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00323615
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