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  • 11
    Electronic Resource
    Electronic Resource
    Quantitative Studies of Scopoletin in Cigarette Smoke and Tobacco (1958)
    s.l. : American Chemical Society
    Analytical chemistry 30 (1958), S. 2041-2044 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60144a054
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  • 12
    Electronic Resource
    Electronic Resource
    A composite quantum well field-effect transistor (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 85-87 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the transport properties of a field-effect transistor (FET) with a composite quantum well, which consists of two adjacent semiconductor quantum wells, GaSb and InAs, sandwiched by AlSb barriers. This FET shows a novel V-shaped transfer characteristic, which is a direct result of the switching between electron and hole channels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118128
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  • 13
    Electronic Resource
    Electronic Resource
    Photoluminescence from the two-dimensional electron gas at GaAs/AlGaAs single heterojunctions (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 285-287 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied photoluminescence from GaAs/Al0.3Ga0.7 As modulation-doped single heterojunctions, using excitation sources from infrared to ultraviolet near-liquid-helium temperature. The spectra have a strong interface component, accompanied by bulk GaAs and AlGaAs band-gap luminescence. Using ultraviolet instead of infrared as the excitation, the interface signal is greatly enhanced relative to the bulk GaAs luminescence. The interface signal can be shifted to the higher energies when a semitransparent front gate is positively biased. Our observations indicate that the interface luminescence comes from the recombination of the two-dimensional electrons with holes trapped at or near the interface. The peaks and the shoulders in the interface spectra appear to correspond to subbands of the two-dimensional electron gas at the interface. Our results demonstrate the feasibility of doing spectroscopic studies on high-mobility electrons at single heterojunctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99915
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  • 14
    Electronic Resource
    Electronic Resource
    New field-effect resonant tunneling transistor: Observation of oscillatory transconductance (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2742-2744 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present device characteristics of a field-effect, unipolar, resonant tunneling transistor. An oscillatory tunneling current in the transfer characteristics is observed for the first time. Our observation confirms a recent hypothesis that a mere three-to-two dimensional resonant tunneling can occur when scattering rate is less than the attempt frequency of tunneling electrons in the quantum well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101940
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  • 15
    Electronic Resource
    Electronic Resource
    Implant and annealed ohmic contact to a thin quantum well (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1650-1652 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate for the first time that ion implantation and implant activation annealing, combined with a heavily doped InGaAs surface layer, can be used to make nonalloying shallow ohmic contact to an n-type InGaAs (or GaAs) quantum well. Quantum Hall effect and Shubnikov–de Haas oscillations are clearly observed, which indicates that electrons in the quantum well remain two dimensional despite the post-implantation high-temperature annealing. This technique can be applied to devices that would need to make shallow ohmic contact to a thin (∼100 A(ring) or less) quantum well, where existing selective etching approaches fail to work.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102227
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  • 16
    Electronic Resource
    Electronic Resource
    Interface properties of HgCdTe metal-insulator-semiconductor capacitors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 265-267 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conductance method has been used to measure the density of interface states of the ZnS/Hg0.775Cd0.225Te metal-insulator-semiconductor (MIS) system with three different HgCdTe surface treatments. It is found that the density of fast interface states increases from ∼1011 eV−1 cm−2 at the conduction-band minimum to ∼1013 eV−1 cm−2 near the valence-band maximum. In addition, the interface states located in the lower part of the band gap communicate with the valence band so efficiently that the effective band gap is reduced. Our observations explain why the p-type MIS photodiode is superior to the n-type version in terms of breakdown voltage and storage time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100985
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  • 17
    Electronic Resource
    Electronic Resource
    Nanometer-size InAs/AlSb quantum wires: Fabrication and characterization of Aharonov–Bohm quantum rings (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5272-5276 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a fabrication method for laterally confining the two-dimensional electrons in InAs/AlSb single quantum wells into artificially patterned conducting wires. The minimum wire width is demonstrated to be ∼30 nm, among the smallest reported to date. The confining potential is approximately square and abrupt, and that makes the electron's spatial distribution in the transverse direction the same as the physical width of the wire. The conducting electrons have close proximity to the surface charges, thus there is always a reduction in the elastic mean free path when the wire width decreases. Despite the reduction in mean free path, we find that the phase coherence length is approximately 1 μm at 2.2 K, a factor of 30 larger than the minimum feature size. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1316053
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  • 18
    Electronic Resource
    Electronic Resource
    Adhesion and deformation of metal/polyimide layered structures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1911-1917 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Adhesion and interfacial failure of Cr, Cu, and Cu/Cr films on a thin pyromellitic dianhydride-oxydianiline polyimide substrate have been investigated using a recently developed stretch deformation technique. This method directly measures the energy required to separate the interface from the difference in the load versus elongation curves between film/substrate and substrate structures. The failure mode was observed in combination with morphological studies by in situ optical microscopy and scanning and transmission electron microscopies. The stress distribution in the sample upon stretching has been computed by a finite element analysis. The difference in the stress relief modes, film fracture, and delamination behavior for Cu versus Cr films is discussed. The important role of crack formation in the metal overlayer for initiating failure is demonstrated. The effects due to the addition of a brittle Cr interface layer between polyimide and Cu on the buildup of stress and the onset of failure have also been investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342903
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  • 19
    Electronic Resource
    Electronic Resource
    Stress relaxation during thermal cycling in metal/polyimide layered films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6690-6698 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stress relaxation behavior during thermal cycling of metal/quartz and metal/polyimide/quartz layered structures has been investigated using a cantilever bending beam technique. The metals chosen for this study include Cu and Cr, two materials with contrasting mechanical and interfacial bonding properties. A finite element analysis, as well as an analytical calculation, has been carried out to deduce the stress distribution in the layered structures. Results indicate that the extent of stress relaxation strongly depends on the intrinsic mechanical property of the metal film with significantly higher stresses residing in the Cr film than in the Cu film. The interfacial polyimide layer has been found to serve as an effective buffering layer to reduce the residual stress in metal films. Observations from transmission electron microscopy suggest that the stress is partially released through the deformation of the polyimide near the metal/polyimide interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341999
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  • 20
    Electronic Resource
    Electronic Resource
    Dependence of InAs phonon energy on misfit-induced strain (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3434-3436 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transverse-optical (TO) phonon energy in strained InAs quantum wells has been investigated by using far-infrared absorption. We observe that the TO phonon energy decreases when the misfit-induced biaxial tension in the InAs single quantum well is increased. Our result shows a stronger phonon energy dependence on the strain than the one reported by Cerdeira et al. [Phys. Rev. B 5, 580 (1972)]. The discrepancy may be explained by stress relaxation near the surface in their experiment. The application of our result will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110137
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