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  • Articles: DFG German National Licenses  (4)
  • 1985-1989  (4)
  • 1985  (4)
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  • Articles: DFG German National Licenses  (4)
Material
Years
  • 1985-1989  (4)
Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 618-619 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of A15 Nb3Al have been prepared by reactive diffusion of sputter-deposited Nb/Al multilayers. The diffusion reactions were studied by in situ annealing x-ray diffraction in the temperature range 50–950 °C. Initially the Nb and Al sublayers react to form the phase NbAl3. This interface reaction prevents the formation of the σ-phase Nb2Al, frequently found as a second phase in A15 Nb3Al materials; NbAl3 reacts with the remaining Nb to form the A15 phase. The highest Tc, 16.2 K measured resistively and 15.2 K inductively, was found in a Nb/Al multilayer with an A15 cell parameter a0=5.195 A(ring) which corresponds to ∼20 at. % Al. From a comparison with previous investigations of the Tc dependence on Al concentration and A15 cell parameter, it is concluded that a small amount of the A15 phase has a higher composition of 22–23 at. % Al.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3672-3672 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal superlattices are predicted to exhibit novel properties such as zone-folding effects of electronic bands and phonon dispersions. Heterostructures consisting of rare-earth magnetic metals Gd, Tm, and nonmagnetic elements Y, Lu with nearly perfect lattice match provide the unique opportunity of studying on the atomic scale the RKKY interaction, and the resultant magnetic ordering spin phases. However, such study would be fruitful only if the layer modulation direction coincides with the crystallographic C axis and a compositionwise sharp interface is achieved. Furthermore, because of the strong reactiveness of rare-earth metals with gas impurities, these stringent film growth requirements can be best met by molecular-beam-epitaxial technique in a UHV environment. We have grown the rare-earth metal single and multilayer films in a versatile UHV deposition system equipped with effusion cells and e-beam evaporators. The typical growth rate is 1 monolayer/s, and the typical background pressure during growth is 1.0×10−10 Torr. With the in situ RHEED characterization, the preferred film growth direction, namely C axis, is controlled by optimizing the substrate temperature, and growth planes of substrates including sapphire, mica, and single crystal yttrium. Magnetic properties including anisotropy and moments versus temperature are studied by vibrating sample magnetometry on these multilayers with modulation wavelength varying from 20 to 200 A(ring). Results of x-ray structure analysis, Rutherford backscattering depth profile, and the resistivity measurements will also be reported.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3897-3899 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous Tb-Fe thin films have been produced by dual-gun dc magnetron cosputtering, which allows a moderate range of compositions (spanning about 20 at. %) to be deposited in a single run under identical conditions. The films exhibit clean M-H loops and torque curves which are somewhat anomalous but show consistent trends. Films deposited at room temperature with a composition in the range 17–30 at. % Tb showed a positive intrinsic anisotropy of roughly 3×106 erg/cm3, resulting in an easy axis of magnetization that is perpendicular to the plane of the film, while films with 〉37 at. % Tb had a small negative intrinsic anisotropy (ca. −2×105 erg/cm3). The temperature dependence of the anisotropy indicates that neither uniaxial stress nor shape anisotropy can account for most of the intrinsic uniaxial anisotropy observed, so we hypothesize that the large anisotropy must be due to pair ordering or a local anisotropy field.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3900-3902 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied and compared the aging characteristics of the amorphous Tb(FeCo) films from both dc getter diode and magnetron sputtering. No protecting layer such as SiO2 or Al2O3 was put on the films. Fresh films of 1.0-μm thickness from diode sputtering showed a perpendicular anisotropy and well-behaved magnetic properties using a vibrating sample magnetometer and an automatic torque magnetometer. We noticed a decrease in perpendicular anisotropy when the films were exposed to the air. However, this aging phenomenon was not observed in films of the same thickness prepared by magnetron sputtering even after seven months' exposure to the air. The reasons for the difference are due to two distinct reaction mechanisms: bulk reaction in diode-sputtered films and surface reaction in magnetron-sputtered films. A variation of the microstructure is believed to attribute to this. The surface reaction was studied in thinner magnetron-sputtered films of 10 and 25 nm, where the surface-to-bulk ratio is larger. A decrease in perpendicular anisotropy with aging was observed in these thinner films.
    Type of Medium: Electronic Resource
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