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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3808-3815 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The possibility of replacing Pt in the Ti/Pt/Au base and traditionally used metallurgical structure by Ni, while bonding InP laser chip to a submount with AuSn (80% Au) solder, has been investigated. Various Ni-based metal alloys have been prepared by evaporation. Reflow experiments were conducted in a chamber under forming gas-controlled ambient. The Ti/Ni/AuSn system provided much longer surface local freezing duration compared to the Ti/Pt/AuSn system. Scanning electron microscopy analysis revealed a smoother surface morphology for the Ti/Ni/AuSn system after the metal refroze. Auger electron spectroscopy depth profiles indicated the formation of a Ni-Sn-Au interacted layer. The interaction took place in two steps: the first stage was the dissolution of Ni into the Au-Sn liquid followed by precipitation of a Ni-Sn-Au intermetallic compound; the second stage was a solid-state interdiffusion of Sn, Au, and Ni which occured in the interacted layer and in the original Ni layer. The latter step was a diffusion-controlled process, resulting in a very slow growth rate. Both Au and Sn reacted to form Ni alloy layers of almost equal thickness, regardless of the reaction duration (up to about 5 min). This intensive reaction, however, did not lead to full consumption of the Ti interfacial layer, which provided an excellent adhesion layer between the submount and the metallurgical structure.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1579-1581 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We compare the superlattice modulation, microstructure, and epitaxy of Tl2Ba2Ca2Cu3O10 thin films grown on MgO [100] and SrTiO3 [100] substrates by dc diode sputtering. Films grown on MgO were found to be quite clean with the c axis perpendicular to the substrate. However, no in-plane orientational relationship to the substrate was found. Films grown on SrTiO3, on the other hand, showed very good epitaxy to the substrate despite the presence of second phases. Films grown on MgO also exhibited a longer coherence length of the superlattice modulation than those grown on SrTiO3 under identical conditions.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 551-556 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have prepared polycrystalline Fe and amorphous Tb(FeCo) films using both dc diode- and magnetron-sputtering techniques. Magnetic properties and aging characteristics of these films were measured by a vibrating sample magnetometer and an automatic torque magnetometer. Film morphologies were studied by transmission electron microscopy. The magnetic and aging characteristics are closely correlated to the film morphology. It was also found that different sputtering methods can be tailored to produce a similar film morphology. Among the sputtering parameters, the Ar pressure during deposition at room or lower temperature strongly influences the film morphology.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3329-3330 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous GdCo films with perpendicular anisotropy have been prepared by dc diode getter sputtering under argon or neon pressure. To study the aging behavior, the films with no protecting layer were used and exposed to air at room temperature. We have observed that the perpendicular anisotropy in these uncoated GdCo films significantly increases with time. Furthermore, the negative (in-plane) anisotropy which existed at the initial stage during aging actually decreases with time and finally disappears.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3900-3902 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied and compared the aging characteristics of the amorphous Tb(FeCo) films from both dc getter diode and magnetron sputtering. No protecting layer such as SiO2 or Al2O3 was put on the films. Fresh films of 1.0-μm thickness from diode sputtering showed a perpendicular anisotropy and well-behaved magnetic properties using a vibrating sample magnetometer and an automatic torque magnetometer. We noticed a decrease in perpendicular anisotropy when the films were exposed to the air. However, this aging phenomenon was not observed in films of the same thickness prepared by magnetron sputtering even after seven months' exposure to the air. The reasons for the difference are due to two distinct reaction mechanisms: bulk reaction in diode-sputtered films and surface reaction in magnetron-sputtered films. A variation of the microstructure is believed to attribute to this. The surface reaction was studied in thinner magnetron-sputtered films of 10 and 25 nm, where the surface-to-bulk ratio is larger. A decrease in perpendicular anisotropy with aging was observed in these thinner films.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2102-2104 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting Tl-Ba-Ca-Cu-O thin films 0.2–1.0 μm thick have been prepared on MgO(100) and SrTiO3(100) substrates by dc diode sputtering using a single oxide target. Films containing primarily the Tl2Ba2Ca1Cu2O8 phase were obtained with a Tc (R=0) at 102 K and a transport Jc of 104 A/cm2 at 90 K. For the nearly pure phase Tl2Ba2Ca2Cu3O10 films, the Tc's (R=0) are higher at 116 K and the transport Jc's at 100 K are of 105 A/cm2. Both types of films show a strong preferred orientation with the c axis perpendicular to the film plane. The rocking curve of the Tl2Ba2Ca2Cu3O10 films is 0.32° wide and the typical grain size is over 10 μm.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2191-2193 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple metallic bonding structure, has been developed consisting of a pure metal Nb and an alloy containing Sn, which can be employed to bond a semiconducting laser device and/or a silicon integrated circuit die to a submount with Au–Sn solder. Differential scanning calorimetry, transmission electron microscopy, and scanning electron microscopy reveal that the Nb layer acts effectively both as an adhesion layer to SiO2 and diamond submounts and as a perfect diffusion barrier against Au–Sn solder. The metallization structure shows no indication of dewetting of the Au–Sn solder. The excellent bonding characters have been attributed to the unique metallurgical properties of Nb. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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