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  • Articles: DFG German National Licenses  (3)
  • 1995-1999  (3)
  • 1999  (3)
Source
  • Articles: DFG German National Licenses  (3)
Material
Years
  • 1995-1999  (3)
Year
Keywords
  • 1
    Electronic Resource
    Electronic Resource
    Vacuum-tunneling magnetoresistance: The role of spin-polarized surface states (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 124-126 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied magnetoresistance effects in Fe–vacuum–Gd tunnel junctions as a function of the applied bias voltage by using a scanning tunneling microscope operated under ultra-high-vacuum conditions. We found that the vacuum-tunneling magnetoresistance (VTMR) can be maximized by tunneling into highly spin-polarized surface states. By tuning the applied bias to the energetic positions of the spin-polarized surface states, a VTMR response as much as 31% at 70 K was obtained. This result is explained in terms of an enhancement caused by the spin-polarized surface state and a suppression of spin-flip tunneling processes compared to tunnel junctions with oxide barriers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124296
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Simultaneous observation of atomic step and domain wall structure of ultrathin Co films by magnetic force microscopy in ultrahigh vacuum (1999)
    Springer
    Applied physics 69 (1999), S. 359-361 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.16.Ch; 75.60.Ch; 75.70 Ak
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. We have applied magnetic force microscopy in ultrahigh vacuum to study the correlation between the atomic step and magnetic domain wall structure of ultrathin Co films prepared in situ on Au(111) substrates. For the first time we were able to achieve high-resolution images showing simultaneously a clear domain wall contrast and the underlying atomic step structure. Although for in-plane magnetized Co films the domain walls were found to run preferentially in a direction perpendicular to the steps, no such correlation could be observed for out-of-plane magnetized Co films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390051014
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Present and future developments of SPM systems as mass storage devices (1999)
    Springer
    Applied physics 68 (1999), S. 131-135 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.16.Ch; 61.46.+w; 75.50.-y; 85.40.Ux
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: 2 . Besides a high data density, a high data rate is an important requirement for a mass storage device. To overcome the problem of the low relative velocity between tip and sample for all commercial scanning probe microscopy (SPM) devices, we have developed a high speed SCM prototype which has the potential to reach data rates of Mbit/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050867
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    Paper (German National Licenses)
    Fulltext
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