Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 124-126
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
We have studied magnetoresistance effects in Fe–vacuum–Gd tunnel junctions as a function of the applied bias voltage by using a scanning tunneling microscope operated under ultra-high-vacuum conditions. We found that the vacuum-tunneling magnetoresistance (VTMR) can be maximized by tunneling into highly spin-polarized surface states. By tuning the applied bias to the energetic positions of the spin-polarized surface states, a VTMR response as much as 31% at 70 K was obtained. This result is explained in terms of an enhancement caused by the spin-polarized surface state and a suppression of spin-flip tunneling processes compared to tunnel junctions with oxide barriers. © 1999 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.124296
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