ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The decay kinetics of a persistent photoconductivity (PPC) in undoped semi-insulating4H SiC and intercenter charge transfer were studied with EPR, photo-EPR and optical admittancespectroscopy (OAS). A thermally activated charge transfer process that occurs in the dark has beenobserved. The PPC effect was observed directly in changes in the quality factor of the EPR cavitybefore and after illumination and by the decay of the OAS signal for deep levels, and indirectly bythe excitation and decay of the nitrogen and boron EPR lines that were not observed in the darkbefore illumination. The decay kinetics of the PPC and photo-induced carrier capture by nitrogenand boron levels were found to follow a stretched exponential form. The PPC in the temperaturerange from 77 to 300K was found to be produced by a thermally induced charge transfer processinvolving deep trap levels
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.563.pdf
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