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  • Articles: DFG German National Licenses  (79)
  • 2000-2004  (11)
  • 1995-1999  (52)
  • 1985-1989  (16)
  • 1
    Electronic Resource
    Electronic Resource
    Spin-reorientation transition in magnetic alloy films CoxNi1−x/Cu(100) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7139-7141 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With better than 1% control of alloy composition, binary alloy films CoxNi1−x/Cu(100) with x≤10% were prepared for the study of the spin-reorientation transition at variations of composition, thickness, and temperature. Only the films with a Co concentration less than 10% reveal the spin-reorientation with the film thickness. The critical thickness for the spin-reorientation transition was shifted drastically from 7.5 to 17.5 monolayers for a Co concentration variation from 0% to 8%. These findings indicate a strong influence of the composition on the magnetoelastic anisotropy. A kind of temperature-driven spin-reorientation from in-plane to perpendicular with increasing temperature was also found. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1354586
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of growth temperature on Curie temperature of magnetic ultrathin films Co/Cu(100) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7153-7155 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic and structural properties were investigated for the 2 ML Co/Cu(100) films grown at various temperatures from 125 to 350 K. By precisely controlling the film thickness, the influence of thickness on Curie temperature (TC) due to the finite size effect can be excluded. The Curie temperature of the 2 ML Co keeps almost invariant for the growth temperature (Tg) below 250 K, and drops drastically at Tg higher than 275 K. For Tg=340 K, TC dropped to 170 K which is only about half of 325 K for Tg=125 K. Accompanied with the increase of TC for the films grown at lower temperatures, the remanent Kerr signal as well as coercivity were enhanced. According to a simple theoretical estimation, the change of TC due to the variation of the magnetization and anisotropy was found to be consistent with the experimental results. The enhancement in TC or magnetization and anisotropy with various Tg should be traced back to the presence of island growth in the films grown at lower temperatures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1358827
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  • 3
    Electronic Resource
    Electronic Resource
    Growth and ferroelectricity of epitaxial-like BaTiO3 films on single-crystal MgO, SrTiO3, and silicon substrates synthesized by pulsed laser deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6466-6471 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial-like BaTiO3 (BTO) films with good ferroelectricity are obtained both on (001)SrTiO3 (STO) single crystal and on CeO2 buffered silicon substrate by pulsed laser deposition. The deposition parameters need to be stringently controlled in order to grow BTO films with good crystallinity. The BTO films grown on YBa2Cu3O7−x (YBCO)/CeO2/STO substrates are epitaxial, as confirmed by rocking curve, φ scan, and wide-angle x-ray-diffraction techniques. The alignment of a and b axes of BTO films on YBCO/CeO2/Si substrate is, however, not as perfect as BTO film on YBCO/STO substrate. The BTO/YBCO/CeO2/Si films are only (00l) textured. The ferroelectric property measurement, using the YBCO layer as the base electrode material, shows that the remanent polarization Pr and coercive field Ec of the BTO/YBCO/CeO2/Si films (Pr=3.6 μC/cm2, Ec=11.1 kV/cm) are, however, as good as those of the BTO/YBCO/STO films (Pr=4.0 μC/cm2, Ec=12.5 kV/cm). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359121
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  • 4
    Electronic Resource
    Electronic Resource
    Interdiffusion of multilayer ferroelectric thin films using YBa2Cu3O7−x as an intermediate layer (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7621-7626 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interdiffusion between layers in multilayer ferroelectric thin films was studied from their elemental depth profiles using secondary ion mass spectrometry. Among the films deposited on YBa2Cu3O7−x/CeO2/Si substrates, the interdiffusion is most pronounced for [Sr0.5Ba0.5]Nb2O6 (SBN) films, less marked for Pb0.97La0.03(Zr1−xTix)0.9925O3 (PLZT, x=0.54 or 0.34) films, and is least significant for BaTiO3 films. Higher substrate temperature used for growing SBN films is believed to be the main cause of interdiffusion. The larger proportion of cationic vacancies existing in PLZT films is another possible source inducing interdiffusion. Using YBa2Cu3O7−x/SrTiO3 as substrates substantially reduces the interdiffusion between layers. This is ascribed to the better crystallinity of the YBa2Cu3O7−x layers deposited on SrTiO3 substrates. These results indicate that both the characteristics of ferroelectric films and the underlying YBa2Cu3O7−x layers substantially modify the interdiffusion behavior between the layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362340
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  • 5
    Electronic Resource
    Electronic Resource
    Observation of small interfacial strains in YBa2Cu3Ox sub-micron-thick films grown on SrTiO3 substrates (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2966-2968 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed x-ray intensity oscillation fringes around low index Bragg reflections in a YBa2Cu3Ox (YBCO) thin film. By employing a combination of crystal truncation rod interference fringe measurements and x-ray reflectivity using synchrotron radiation, we have been able to probe the structures of highly oriented [001] YBCO grown on [001] SrTiO3 substrates. The results demonstrate the presence of a thin disordered surface layer, the excellent coherence between the YBCO surface and the film-substrate interface, the presence of a small (3.2×10−4) interfacial strain existing in the YBCO film. This strain exists close to the film-substrate interface and extends approximately 300 Å into the micron-thick film. Our results demonstrate that high quality detailed information can be obtained, nondestructively, from thin film superconductors of thicknesses typically used for microwave and other applications. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121509
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  • 6
    Electronic Resource
    Electronic Resource
    Frequency doubling in two-component self-assembled chromophoric waveguide structures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1941-1943 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled chromophoric multilayers having large second-order optical nonlinearities can be combined with linear guiding materials such as polymethylmethacrylate to produce two-component frequency doubling waveguides. This approach introduces considerable flexibility in optimizing the trade-off between the overlap of waveguide mode profiles and linear absorption. Extremely low waveguide propagation losses can be achieved because electric field poling and the accompanying poling-induced optical scattering are obviated. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118786
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  • 7
    Electronic Resource
    Electronic Resource
    Femtosecond hot-carrier energy relaxation in GaAs (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1442-1444 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excited carrier dynamics in GaAs and Al0.2Ga0.8As are investigated using femtosecond pump and continuum probe techniques. We observe absorption spectral hole burning arising from excited carriers generated by transitions from the split-off band as well as the heavy- and light-hole bands. Transient absorption saturation measurements indicate that the initial nonthermal carrier distribution thermalizes on a time scale of several tens of femtoseconds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98651
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  • 8
    Electronic Resource
    Electronic Resource
    Temperature dependence of interstitial oxygen diffusion in antimony-doped Czochralski silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2659-2660 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured directly the diffusivity of interstitial oxygen in Sb-doped Czochralski silicon in the temperature range 750–1150 °C. Using secondary-ion mass spectroscopy of outdiffusion profiles, we show that the diffusivity is the same as that for lightly B-doped crystals heated under identical conditions over the temperature range studied. We briefly discuss the implication of these results upon oxygen precipitation mechanisms in Sb-doped silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100186
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  • 9
    Electronic Resource
    Electronic Resource
    Femtosecond dynamics of highly excited carriers in AlxGa1−xAs (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 161-163 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Femtosecond transient absorption saturation measurements are used to investigate the scattering of optically excited carriers in AlGaAs. With pulses as short as 35 fs at 1.98 eV, scattering times ranging from 13 to 330 fs are observed in samples of AlxGa1−xAs with x=0, 0.1, 0.2, 0.3, and 0.4. A dramatic decrease in the rate of carrier scattering out of the initial optically excited states is observed with increasing Al concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98908
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  • 10
    Electronic Resource
    Electronic Resource
    A new two-dimensional theory for vibrations of piezoelectric crystal plates with electroded faces (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1213-1223 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A system of two-dimensional (2-D) governing equations for piezoelectric plates with general crystal symmetry and with electroded faces is deduced from the three-dimensional (3-D) equations of linear piezoelectricity by expansion in series of trigonometric functions of thickness coordinate. The essential difference of the present derivation from the earlier studies by trigonometrical series expansion is that the antisymmetric in-plane displacements induced by gradients of the bending deflection (the zero-order component of transverse displacement) are expressed by the linear functions of the thickness coordinate, and the rest of displacements are expanded in cosine series of the thickness coordinate. For the electric potential, a sine-series expansion is used for it is well suited for satisfying the electrical conditions at the faces covered with conductive electrodes. A system of approximate first-order equations is extracted from the infinite system of 2-D equations. Dispersion curves for thickness shear, flexure, and face-shear modes varying along x1 and those for thickness twist and face shear varying along x3 for AT-cut quartz plates are calculated from the present 2-D equations as well as from the 3-D equations, and comparison shows that the agreement is very close without introducing any corrections. Predicted frequency spectra by the present equations are shown to agree closely with the experimental data by Koga and Fukuyo [J. Inst. Elec. Comm. Engrs. of Japan 36, 59 (1953)] and those by Nakazawa, Horiuchi, and Ito [Proceedings of 1990 IEEE Ultrasonics Symposium (IEEE, New York, 1990)]. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366818
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