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  • Articles: DFG German National Licenses  (126)
  • 2000-2004  (45)
  • 1990-1994  (79)
  • 1965-1969  (2)
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  • Articles: DFG German National Licenses  (126)
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Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5942-5944 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The power loss of Mn-Zn ferrites and its dependency on the microstructural factors have been investigated. The power loss was found to be lowered due to the formation of a high-electrical-resistive boundary layers, which is accomplished by an addition of specific refractory oxides, which are concentrated on the grain boundary and form a boundary layer with CaO. The new material, having a low power loss at high frequency (∼1 MHz), has been developed with the HfO2 addition.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 4136-4141 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Ion vibration gives rise to a new pulsing dipole moment which affects the long-range interaction with the target molecule. This pulsing long-range interaction mechanism has been applied to the proton-transfer reaction NH+3(ν)+NH3→NH2+NH+4 in which the vibrational mode-specific depression of the reaction rate is observed. Significance of the vibrationally induced dipole moment of NH+3(ν) has been clarified in such a way that the origin of the depression is ascribed to the interaction of this pulsing dipole moment with the permanent dipole moment of NH3. The results of calculation agree qualitatively well with the experimental result [Chupka and Russell, J. Chem. Phys. 48, 1527 (1968)].
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2043-2047 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Schottky barrier height (SBH) of MnSb(0001)/n-GaAs(111)B diodes was investigated in terms of current–voltage characteristics for three different GaAs surfaces, GaAs (19×19), GaAs (2×2), and sulfur passivated GaAs. We observed that the SBH and the ideality factor changed significantly depending on the GaAs surface structure prepared before the MnSb growth. The sulfur passivated sample was superior to the others in that it has a lower ideality factor and higher barrier. The SBH fell off linearly with increasing ideality factor n. The SBH of MnSb(0001)/n-GaAs(111)B was estimated to be 0.94 eV by extrapolating the linear relationship to n=1. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 1 (1994), S. 3262-3268 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The behavior of finite-pressure-induced magnetic islands is numerically analyzed for three-dimensional magnetohydrostatic equilibria of the Helias configuration by using a three- dimensional equilibrium code. It is found that an island chain is generated on the 5/6 rational surface, when such a surface appears in the plasma region of the finite-β equilibrium. The island chain, however, is not so dangerous as to destroy the plasma confinement even if it appears in a vanishingly small shear region. Thus, a high β equilibrium with clear magnetic surfaces can be realized. Moreover, it is definitely confirmed that the finite pressure effect sometimes exhibits an unexpectedly good aspect, namely, that the vacuum islands are removed as β increases, which can be called ‘self-healing' of islands. This property can be explained by the numerically discovered fact that the phases of islands induced by the finite-pressure effect are always locked in the same phase regardless of β.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 984-990 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nondissipative drift kinetic simulation scheme, which rigorously satisfies the time-reversibility, is applied to the three-mode coupling problem of the ion temperature gradient (ITG) instability. It is found from the simulation that the three-mode ITG system repeats growth and decay with a period which shows a logarithmic divergence for infinitesimal initial perturbations. Accordingly, time average of the mode amplitude vanishes, as the initial amplitude approaches zero. An exact solution is analytically given for a class of initial conditions. An excellent agreement is confirmed between the analytical solution and numerical results. The results obtained here provide a useful reference for basic benchmarking of theories and simulations of the ITG modes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1515-1519 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si3N4/SiC interface structure in SiC-nanocrystal-embedded α-Si3N4 nanorods was studied by high-resolution transmission electron microscopy. The SiC-nanocrystal-embedded α-Si3N4 nanorods were synthesized by the method of carbothermal reduction of SiO in pure N2 atmosphere, while the SiC nanocrystals were produced from a substitution of SiC for Si3N4. Between SiC and Si3N4, there are three kinds of plane configurations and a set of orientation relationships, i.e., [11¯0]SiC//[0001]Si3N4 and nearly (111)SiC//(101¯0)Si3N4 with low-angle discrepancy of either 3° or 5°. The origin of the low-angle discrepancies was explained in terms of a reciprocal lattice theory for heteroepitaxial interfaces. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6457-6459 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lifetime of excitons in Cd1−xMnxTe/Cd1−yMgyTe single quantum wells was investigated by time-resolved photoluminescence spectroscopy. Spin-flips between dark and bright excitons remarkably change the excitonic lifetime yielding a two-exponential decay in the photoluminescence intensity. The temperature dependence of the two decay times shows that the spin-flip rate depends strongly on the formation of excitonic magnetic polarons. By forming polarons, the spin-flip rate from dark excitons to bright excitons is reduced effectively by the spin- barriers of the polarized Mn ions, which extends significantly the luminescence decay time. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6701-6703 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magneto-photoluminescence from mesa-shaped Cd0.95Mn0.05Te/Cd0.90Mg0.10Te quantum wires were studied. The Zeeman shift of the excitonic photoluminescence from the quantum wires in a magnetic field is significantly decreased, compared to that from quantum wells. This decrease results from the possible reduction of the exchange interaction of electrons and holes with Mn ions in low dimensional structures. In the excitonic photoluminescence of the quantum wires with the width of 50–100 nm, the transient relaxation of the luminescence peak energy due to the excitonic magnetic polaron formation is remarkably less than that in the quantum well. This result shows the suppressed excitonic magnetic polaron effect in the narrower quantum wires. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 952-954 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high-current microwave ion source which is used for O+ ion implantation in separation by implanted oxygen (SIMOX) wafer fabrication is presented. The source consists of a new transform waveguide which efficiently propagates a 2.45 GHz microwave power into the ion source, a cylindrical plasma chamber of 90 mm in diameter, and a multiaperture extraction electrode system. The extracted beams are mass separated and then postaccelerated up to 200 keV. Ion source operates stably for a long time and the microwave absorption efficiency is as high as 80%. A total extraction current of 240 mA is obtained at the extraction voltage of 50–60 kV and the mass-separated O+ current reaches about 100 mA at the same extraction voltage. The data show that the ion source has a good potential to provide 100 mA-class O+ ion beams stably in the wide energy range demanded for SIMOX ion implantation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 144 (2001), S. 0 
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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