Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles: DFG German National Licenses  (4)
  • 2000-2004  (4)
Source
  • Articles: DFG German National Licenses  (4)
Material
Years
Year
Keywords
  • 1
    Electronic Resource
    Electronic Resource
    Enhancement of room temperature magnetoresistance in double perovskite ferrimagnets (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5037-5039 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The double perovskite Sr2FeMoO6 is a half-metallic ferrimagnet exhibiting significant magnetoresistance (MR) at 300 K in a magnetic field H〈2 kOe. A preliminary study of the influence of isovalent and aliovalent substitutions for Sr2+ on the magnitude of the room-temperature MR is reported. Of the polycrystalline samples, Sr1.9A0.1FeMoO6 (A=Ca, Ba, La or Pr), the best result was obtained with the Ba(0.1) sample, which showed a factor of 2 enhancement of the MR over that previously reported for Sr2FeMoO6. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373240
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Grain-boundary room-temperature low-field magnetoresistance in Sr2FeMoO6 films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6761-6763 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of (001)-oriented Sr2FeMoO6 have been epitaxially deposited or LaAlO3 and SrTiO3 (001) substrates by pulsed laser deposition. The deposition conditions were optimized. Single-phase Sr2FeMoO6 was obtained in 100 mTorr 99.999% Ar gas at 825 °C. Transport and magnetic data showed a metallic temperature dependence and a saturation magnetization Ms at 10 K of 3.2μB/f.u. However, the Curie temperature TC(approximate)380 K was reduced from 415 K found for tetragonal polycrystalline best ceramics, which lowers Ms at 300 K in the thin films to 1.5μB/f.u. compared to 2.2μB/f.u. in the ceramics. A low remanence was attributed to the presence of antiphase boundaries. A Wheatstone bridge arrangement straddling a bicrystal boundary was used to verify that spin-dependent electron transfer through a grain boundary and not an antiphase boundary is responsible for the low-field magnetoresistance found in polycrystalline samples below TC. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372833
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Near-room-temperature tunneling magnetoresistance in a trilayer La0.67Sr0.33MnO3/La0.85Sr0.15MnO3/La0.67Sr0.33MnO3 device (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 714-716 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A trilayer La0.67Sr0.33MnO3/La0.85Sr0.15MnO3/La0.67Sr0.33MnO3 tunneling magnetoresistance (TMR) device has been epitaxially produced on a SrTiO3 substrate. The current–voltage curves show that tunneling process dominates the carrier transfer across the junction near room temperature. However, the tunneling effect becomes weak with decreasing temperature. Magnetoresistance of about 4%–6% has been observed below room temperature. The temperature dependence of TMR appears correlated to both the tunneling effect cross the junction and the spin polarization in La0.67Sr0.33MnO3 layers. The temperature dependence of the TMR effect in this device is different from that of other devices based on colossal magnetoresistance materials. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127095
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Localized-Itinerant and Mott–Hubbard Transitions in Several Perovskites (2000)
    Springer
    Journal of superconductivity 13 (2000), S. 989-993 
    Details
    ISSN: 1572-9605
    Keywords: manganese oxides ; high pressure ; charge-density waves ; magnetism ; polarons
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The localized-itinerant and Mott–Hubbard transitions in single-valent perovskites are distinguished. The approach to the Mott–Hubbard transition from the itinerant-electron side is characterized by the appearance of strong-correlation fluctuations within a metallic matrix; these fluctuations introduce a Curie–Weiss paramagnetism that is added to a strongly enhanced Pauli paramagnetism. As the critical bandwidth is approached, ordering of the strong-correlation fluctuations into a charge-density wave (CDW) may compete with a global Mott-Hubbard transition. The approach to the localized-itinerant electronic transition from the localized-electron side is illustrated by LaMnO3, where orbital ordering localizes the electrons of e-orbital parentage. In the mixed-valent La1−x Sr x MnO3 system, the doped holes evolve from small polarons to two-manganese Zener polarons to itinerant-electron behavior. The Zener polarons order at low temperatures into a CDW.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1026462510687
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...