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  • 1
    Electronic Resource
    Electronic Resource
    Enhancement of room temperature magnetoresistance in double perovskite ferrimagnets (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5037-5039 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The double perovskite Sr2FeMoO6 is a half-metallic ferrimagnet exhibiting significant magnetoresistance (MR) at 300 K in a magnetic field H〈2 kOe. A preliminary study of the influence of isovalent and aliovalent substitutions for Sr2+ on the magnitude of the room-temperature MR is reported. Of the polycrystalline samples, Sr1.9A0.1FeMoO6 (A=Ca, Ba, La or Pr), the best result was obtained with the Ba(0.1) sample, which showed a factor of 2 enhancement of the MR over that previously reported for Sr2FeMoO6. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373240
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  • 2
    Electronic Resource
    Electronic Resource
    Grain-boundary room-temperature low-field magnetoresistance in Sr2FeMoO6 films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6761-6763 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of (001)-oriented Sr2FeMoO6 have been epitaxially deposited or LaAlO3 and SrTiO3 (001) substrates by pulsed laser deposition. The deposition conditions were optimized. Single-phase Sr2FeMoO6 was obtained in 100 mTorr 99.999% Ar gas at 825 °C. Transport and magnetic data showed a metallic temperature dependence and a saturation magnetization Ms at 10 K of 3.2μB/f.u. However, the Curie temperature TC(approximate)380 K was reduced from 415 K found for tetragonal polycrystalline best ceramics, which lowers Ms at 300 K in the thin films to 1.5μB/f.u. compared to 2.2μB/f.u. in the ceramics. A low remanence was attributed to the presence of antiphase boundaries. A Wheatstone bridge arrangement straddling a bicrystal boundary was used to verify that spin-dependent electron transfer through a grain boundary and not an antiphase boundary is responsible for the low-field magnetoresistance found in polycrystalline samples below TC. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372833
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  • 3
    Electronic Resource
    Electronic Resource
    Near-room-temperature tunneling magnetoresistance in a trilayer La0.67Sr0.33MnO3/La0.85Sr0.15MnO3/La0.67Sr0.33MnO3 device (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 714-716 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A trilayer La0.67Sr0.33MnO3/La0.85Sr0.15MnO3/La0.67Sr0.33MnO3 tunneling magnetoresistance (TMR) device has been epitaxially produced on a SrTiO3 substrate. The current–voltage curves show that tunneling process dominates the carrier transfer across the junction near room temperature. However, the tunneling effect becomes weak with decreasing temperature. Magnetoresistance of about 4%–6% has been observed below room temperature. The temperature dependence of TMR appears correlated to both the tunneling effect cross the junction and the spin polarization in La0.67Sr0.33MnO3 layers. The temperature dependence of the TMR effect in this device is different from that of other devices based on colossal magnetoresistance materials. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127095
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  • 4
    Electronic Resource
    Electronic Resource
    Intra- versus intergranular low-field magnetoresistance of Sr2FeMoO6 thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2812-2814 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of (001)-oriented Sr2FeMoO6 have been epitaxially deposited on LaAlO3 and SrTiO3 (001) substrates. Comparison of their transport and magnetic properties with those of polycrystalline ceramic samples shows a metallic versus semiconductor temperature dependence and a saturation magnetization Ms at 10 K of 3.2 μB/f.u. in the film as against 3.0 for a tetragonal polycrystalline sample. However, the Curie temperature TC(approximate)389 K is reduced from 415 K found for the tetragonal ceramic, which lowers Ms at 300 K in the thin films to 2.0 μB/f.u. compared to 2.2 μB/f.u. in the ceramics. A Wheatstone bridge arrangement straddling a bicrystal boundary has been used to verify that spin-dependent electron transfer through a grain boundary is responsible for the low-field magnetoresistance found in polycrystalline samples below TC. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125158
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  • 5
    Electronic Resource
    Electronic Resource
    Blood interactions with plasticized poly(vinyl chloride): relevance of plasticizer selection (1999)
    Springer
    Journal of materials science 10 (1999), S. 527-531 
    Details
    ISSN: 1573-4838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine , Technology
    Notes: Abstract An investigation has been made of blood interactions with plasticized poly(vinyl chloride) (PVC) biomaterials in tubular form, taking into account the influence on the blood response of the polymer, antithrombotic agent, blood condition and test procedure. In vitro and ex vivo procedures were used to achieve a comparison between PVC plasticized with di- (2-ethylhexyl)phthalate (DEHP) and with tri-(2-ethylhexyl)trimellitate (TEHTM). The blood response was monitored in terms of the measurement of fibrinogen adsorption capacity, thrombin–antithrombin III complex (TAT) and the complement component C3a. Surface characterization of the polymers was performed by X-ray photoelectron spectroscopy (XPS). The data obtained indicate that in comparison with DEHP-PVC, there is a higher reactivity for TEHTM-PVC, which correlates with the plasticizer distribution at the polymer surface. © 1999 Kluwer Academic Publishers
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008912213420
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