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  • Articles: DFG German National Licenses  (100)
  • 1995-1999  (58)
  • 1990-1994  (42)
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  • Articles: DFG German National Licenses  (100)
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  • 1
    Electronic Resource
    Electronic Resource
    High conductivity and nonlinear Seebeck coefficient of Ag2O containing (Bi–Pb–Sr–Ca–Cu–O) glassy precursors for high Tc superconductors (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7320-7325 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical conductivities (σdc) of the as-quenched Bi3.5Pb0.5Sr3Ca3Cu4Ox+zAg2O (with z=1, 3, 5, and 10 wt %) glassy precursors for high Tc superconductors are found to be much higher (∼10−5−101 Ω−1cm−1) than those of the corresponding Ag2O free Bi3.5Pb0.5Sr3Ca3Cu4Ox (denoted by BPB) precursor glass (∼10−13−10−6 Ω−1cm−1). This unusually high conductivity is attributed to the increase of carrier concentrations caused by the addition of Ag2O (also observed from the Hall effect measurements). The experimentally observed high values of σdc do not follow Mott's variable range hopping model which is in sharp contrast to the behavior of the corresponding pure BPB and many other conventional transition metal oxide glasses having high resistivities. Moreover, the Seebeck coefficients (S) of these glassy precursors show nonlinear variations (from negative at lower temperature to positive at higher temperature) which cannot be clearly explained by phonon drag or electron-phonon interaction. This behavior of S which is also supported from Hall effect measurement is considered to be due to the nonlinear thermal variations of carrier concentrations (both hole and electron) present in the glassy samples. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365330
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Asymmetric line shapes in the indirect predissociation of the f 1Σu+ Rydberg state of O2 (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 6631-6640 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Rotationally-resolved Beutler–Fano line shapes observed in the photoabsorption spectrum of the (2,0) band of the 3pπuf 1Σu+←X 3Σg− Rydberg system of O2 are interpreted using a coupled-channel Schrödinger equations model. It is found that the f 1Σu+ state is indirectly predissociated by the B 3Σu− continuum, and that the f←X transition borrows oscillator strength primarily from dipole-allowed transitions into the mixed Rydberg-valence states of 3Σu− symmetry. Both the predissociation linewidth and oscillator strength of the (2,0) resonance are controlled by the spin-orbit interaction between the 1Σu+ and 3Σu− components of the 3p-complex. There is some evidence for a destructive quantum interference between the transition amplitude borrowed from the 3pπuE 3Σu−←X 3Σg− transition and that borrowed weakly from the f 1Σu+←b 1Σg+ transition through spin-orbit mixing between the b 1Σg+ and X 3Σg− states. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.469379
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Evaluation of Drug-Lipid Association Constants from Microelectrophoretic Mobility Measurements (1995)
    s.l. : American Chemical Society
    Langmuir 11 (1995), S. 1134-1137 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00004a017
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical properties of iron-silica nanocomposites synthesized by electrodeposition (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6835-6840 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanometer-sized iron particles with diameters in the range 5.5–11.1 nm were grown within a silica gel by an electrodeposition method. Electron diffraction measurements show that some of the iron particles were oxidized to Fe3O4. dc resistivity measurements over the temperature range 110–300 K show a T−1/4 variation indicating a variable range hopping transport. ac conductivity over the frequency range 100 Hz–2 MHz show an overlapping large polaron tunneling mechanism to be operative. The dielectric modulus spectra as a function of frequency were analyzed on the basis of a stretched exponential relaxation function. The values of the exponent β as extracted from this analysis were in the range 0.38–0.46. The activation energies corresponding to the maximum of the imaginary part of the dielectric modulus were in the range 0.13–0.20 eV. These are ascribed to an electron tunneling mechanism. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371759
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical resistivity of silver–silica nanocomposites (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3623-3625 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanoparticles of silver with diameters in the range 10.3–25.7 nm were grown within a silica gel medium by an electrodeposition technique. The dc resistivity of the nanocomposites was measured over the temperature range 100–300 K. The resistivity as a function of inverse temperature shows a maximum at around 175 K. This is explained as arising due to the presence of two conduction mechanisms, viz., an electron tunnelling between metal particles and conduction through a percolated metal structure which is fractal in nature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369724
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  • 6
    Electronic Resource
    Electronic Resource
    Superconductivity in rapidly quenched metallic systems with nanoscale structure (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2934-2940 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocomposites of Al-In, Al-Pb, and Zn-Pb have been prepared and characterized using rapid quenching techniques and the nature of superconducting transitions in them has been studied by resistivity measurements. The precipitated second phases (In and Pb) have particle sizes (d) of a few tens of nanometers such that ξ0≥d≥dmin, where ξ0 is the superconducting zero temperature coherence length and dmin is the minimum particle size that supports superconductivity. The onset of superconductivity generally starts in samples with d∼ξ0 and progressively other grains with d≤ξ0 become superconducting. We suggest that the proximity effect of the matrix plays a significant role. In an Al-In system, even with 40 wt.% In, the zero resistivity state is obtained at T∼1.33 times the Tc of Al. But in Al-Pb and Zn-Pb, the zero resistivity state is obtained at T∼4 and 5 times the Tc of Al and Zn with only 10–15 wt % Pb, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353024
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  • 7
    Electronic Resource
    Electronic Resource
    Measurement of band offset of a strained-layer single quantum well by a capacitance-voltage technique (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7618-7620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a modified Kroemer's analysis [Appl. Phys. Lett. 36, 295 (1980)] for the determination of the band offset ΔEc of a single quantum well from a carrier profile obtained by capacitance-voltage measurement. The procedure is applied to a pseudomorphic GaAs/InGaAs/GaAs strained layer structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354941
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  • 8
    Electronic Resource
    Electronic Resource
    Epitaxial silicon growth conditions and kinetics in low-temperature ArF excimer laser photochemical-vapor deposition from disilane (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1137-1148 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial Si films were deposited using an ArF excimer laser beam parallel to the substrate to photodissociate Si2H6 at low temperatures (250–350 °C) under laser intensity and Si2H6 partial pressure conditions that result in low initial photofragment concentrations (〈 1013 cm−3). Total pressure and flow conditions were chosen such that there is little secondary photolysis of the initial photofragments. The deposition yield of solid Si from photoexcited Si2H6 is estimated to be 0.20±0.04, indicating that in order for film growth to result solely from the primary products in ArF laser (193 nm) photolysis of Si2H6, a sticking coefficient ≥0.6 must be assigned to the dominant growth precursor. Growth rates vary linearly with laser intensity and Si2H6 partial pressure over a range of 1–15 mJ/cm2 pulse and 5–40 mTorr, respectively. Increasing the distance between the laser-beam axis and the silicon substrate results in a reduction of the growth rate that can be explained by gas-phase chemical reaction of the growth precursors as they diffuse to the substrate. Epitaxy is maintained for temperatures above the threshold for thermal decomposition of surface (SiH2)n chains at ∼250 °C, and for temperatures below the onset of Si2H6 pyrolysis and rapid thermal desorption of surface H2 at ∼350 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351791
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial silicon growth using supersonic jets of disilane: A model study of energetic jet deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2951-2953 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High (2 eV) and low kinetic energy supersonic jets of disilane as well as ultrahigh vacuum chemical vapor deposition have been employed to grow epitaxial silicon thin films on Si(100) wafers at temperatures ranging from 500 to 650 °C. The growth properties and film uniformity are compared in order to characterize the high energy technique. High translational energy disilane supersonic jets increase the efficiency of deposition by increasing the disilane reaction probability. The growth profiles from the high energy jet are sharply peaked due to a focusing of the precursor along the jet centerline. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114822
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  • 10
    Electronic Resource
    Electronic Resource
    ArF excimer laser induced photolytic growth of Si homoepitaxial films from Si2H6 at 330 °C (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 514-516 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter discusses low-temperature Si homoepitaxy on Si(100) substrates by the photolytic decomposition of Si2H6 by the 193 nm emission of an ArF excimer laser. The chemical vapor deposition process at growth rates from 0.5–4 A(ring)/min is performed in an ultrahigh vacuum chamber which, along with an ex situ HF dip and a novel in situ hydrogen clean using laser excitation, results in minimization of oxygen and carbon contamination which inhibits Si epitaxy. The growth involves photolytic decomposition of Si2H6 and the generation and adsorption of SiH2 precursors on the hydrogenated Si surface, which is the rate limiting step. Very low defect density films in terms of stacking faults and dislocation loops (less than 106 cm−2), and excellent crystallinity have been grown at 330 °C and 0.5 W laser power, as confirmed by Schimmel etching and Nomarski microscopy, transmission electron microscopy, electron diffraction and in situ reflection high-energy electron diffraction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104599
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