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  • Articles: DFG German National Licenses  (12)
  • 1995-1999  (7)
  • 1990-1994  (5)
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  • Articles: DFG German National Licenses  (12)
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Comment on "A theory on the x-ray sensitivity of a silicon surface-barrier detector including a thermal charge-diffusion effect'' [J. Appl. Phys. 72, 3363 (1992)] (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1462-1462 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that a recent analysis by Cho et al. [J. Appl. Phys. 72, 3363 (1992)] of surface-barrier detectors does not represent a new approach and is affected by gross errors, which lead to a wrong factor of 1/2 in the charge-collection probability and to the incorrect conclusion that one- and three-dimensional charge-diffusion models disagree.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354863
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Comment on "A contribution to the theory of beam-induced current characterization of dislocations'' [J. Appl. Phys. 69, 6387 (1991)] (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7657-7659 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pasemann [J. Appl. Phys. 69, 6387 (1991)] has recently compared exact and first-order calculations of the charge collection contrast of a straight dislocation perpendicular to the surface of a semiconductor, finding substantially different dependence on the beam energy at low beam energies. Here it is shown that Pasemann's result is only a consequence of having used finite values of the dislocation radius in the exact evaluations and zero in the approximate ones. For nonvanishing dislocation radius, the first-order approximation reproduces the exact contrast trend at any beam energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349680
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  • 3
    Electronic Resource
    Electronic Resource
    Reconstruction of the charge collection probability in a semiconductor diode from collection efficiency measurements by the regularization method (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7287-7294 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method is introduced to analyze the collection efficiency data that are obtained on a Schottky or p–n junction diode by irradiation with an electron beam with variable energy. The method aims at directly reconstructing the distribution φ(z) of the charge collection probability in the device, by inverting the integral transform that connects φ(z) to the measured collection efficiency profile. This inversion is generally an ill-posed problem, which, however, can be solved by the Tikhonov regularization method. This procedure is used to analyze published measurements obtained both on Si and GaAs diodes, and is shown to be particularly useful for characterizing nonideal devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347575
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  • 4
    Electronic Resource
    Electronic Resource
    Comment on "Determination of minority-carrier lifetime and surface recombination velocity by optical-beam-induced-current measurements at different light wavelengths'' [J. Appl. Phys. 66, 3060 (1989)] (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3023-3023 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that a recent analysis by Flohr and Helbig [J. Appl. Phys. 66, 3060 (1989)] of beam-induced current has already appeared in the literature, and can be simplified by using the results of von Roos and Luke [J. Appl. Phys. 54, 3938 (1983)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346413
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  • 5
    Electronic Resource
    Electronic Resource
    Electrostatic problem of a point charge in the presence of a semi-infinite semiconductor (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 684-690 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The space-charge region that is induced in a semiconductor half-space by an external point charge is analyzed. The mathematical model gives rise to a free-boundary problem, since the edge of the space-charge region [a surface z=z(d) in cylindrical coordinates] is unknown. From the formal solution of Poisson's equation, an integral equation for z(d) is derived and approximately solved. The solution describes the depletion region in dependence of the magnitude of the point charge, the charge-semiconductor distance, and the doping and dielectric constant of the semiconductor. Approximate expressions are derived for the force acting on the point charge and are used to estimate the electrostatic force between the tip and a silicon sample in a scanning force microscope. The limitations of the model are discussed and its generalization to the case of a semiconductor coated by a dielectric film is outlined. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360326
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  • 6
    Electronic Resource
    Electronic Resource
    Reciprocity theorem for charge collection by a surface with finite collection velocity: Application to grain boundaries (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 959-966 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A proof is given of a reciprocity theorem which applies to charge collection by a semiconductor surface with finite collection velocity. The theorem leads to a boundary-value problem for the charge collection probability cursive-phi. This problem is solved by the eigenfunctions expansion method for the normal collector geometry, where the collecting surface corresponds to the edge of a nonideal junction or to a charge-collecting grain boundary. The solution thus obtained is equivalent to that found earlier by the method of images but has a much simpler form. This solution, its asymptotic approximations and low-order moments, as well as the boundary conditions for cursive-phi can find use in the determination of the surface collection/recombination velocity and minority-carrier diffusion length in a semiconductor from experimental induced current scans. The new expression for cursive-phi is used to calculate the collection efficiency profile of a charge-collecting grain boundary for a generation with finite lateral extent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357774
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Comment on "Including getter effect in a numerical contrast calculation for micrographs: A numerical contrast calculation for electron beam induced current at gettered dislocations" [Appl. Phys. Lett. 69, 4090 (1996)] (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2216-2216 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119385
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Modeling the effect of dislocations on the minority carrier diffusion length of a semiconductor (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2656-2664 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analysis is given of the minority carrier diffusion and collection in a semiconductor with a surface junction, in the presence of a periodic array of straight dislocations perpendicular to the surface. A dislocation is characterized by its line recombination velocity and is attributed a finite cross section. An approximate solution is obtained for the three-dimensional charge collection probability cursive-phi(r) in the unit cell of the array. The integral of cursive-phi over the unit cell is used to introduce a new definition of effective diffusion length and to give its analytical expression. It is shown that the relative reduction of diffusion length produced by the dislocation array coincides with the fractional decrease of the total number of junction-injected carriers. This result establishes a connection between the efficiency of charge collection and luminescence of a sample containing dislocations. The analysis is extended to the case of a thin sample, and is compared to previous discussions of the same problem. The consequences of the theory are illustrated by numerical examples and applications to published experimental data. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368378
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Simulation of pulse height spectra in ion beam induced charge microscopy of polycrystalline silicon (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 742-747 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article describes computer simulations of the charge pulse height spectra that are obtained by irradiating selected regions of a polycrystalline silicon solar cell by a 2 MeV He+microbeam. The spectra are calculated in terms of the energy loss function of the ions and the distribution of the charge collection probability at a grain boundary, and illustrate the effect of the interface recombination velocity of the grain boundary and the bulk diffusion length. The simulations are compared with some experimental spectra to demonstrate the applicability of the theory. The method can be extended to the analysis of other semiconductor defects or more complex devices. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365768
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  • 10
    Electronic Resource
    Electronic Resource
    Reconstruction of the charge collection probability in a semiconductor device from the derivative of collection efficiency data (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 4004-4006 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method is presented for analyzing the charge collection efficiency data that are obtained by irradiating a semiconductor device with an electron beam at different energies, and measuring the induced current. The procedure uses the numerical derivative of the function Rη(R) (η is the collection efficiency and R the electron range), and allows a direct reconstruction of the depth distribution of the charge collection probability in the device. Examples of application of the method to simulated data and published measurements are described. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125530
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