Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
76 (1994), S. 959-966
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A proof is given of a reciprocity theorem which applies to charge collection by a semiconductor surface with finite collection velocity. The theorem leads to a boundary-value problem for the charge collection probability cursive-phi. This problem is solved by the eigenfunctions expansion method for the normal collector geometry, where the collecting surface corresponds to the edge of a nonideal junction or to a charge-collecting grain boundary. The solution thus obtained is equivalent to that found earlier by the method of images but has a much simpler form. This solution, its asymptotic approximations and low-order moments, as well as the boundary conditions for cursive-phi can find use in the determination of the surface collection/recombination velocity and minority-carrier diffusion length in a semiconductor from experimental induced current scans. The new expression for cursive-phi is used to calculate the collection efficiency profile of a charge-collecting grain boundary for a generation with finite lateral extent.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357774
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