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  • 1
    Electronic Resource
    Electronic Resource
    Preparation of superconducting thin films of (La1−xSrx)yCuO4−δ by sputtering (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1524-1526 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting thin films of (La1−xSrx)yCuO4−δ have been prepared by sputtering with careful control of such preparation parameters as target composition, total pressure and composition of gases in the reactor, substrate material and temperature, and annealing conditions. In accordance with the bulk target materials, the superconducting films show K2NiF4-type x-ray diffraction patterns, although this crystal structure was not the sole requisite for the superconductivity of the films. The films prepared thus far have a superconducting transition onset of about 36 K and turn out to be fully superconducting at temperatures below 10 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339617
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  • 2
    Electronic Resource
    Electronic Resource
    Step-flow growth of SrTiO3 thin films with a dielectric constant exceeding 104 (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3543-3545 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of SrTiO3 films in cryogenic high-frequency applications has been limited by the low dielectric constant εr of thin films ((approximate)103) when compared to the bulk value of over 104. We show that the extension of the pulsed laser deposition technique to temperatures well above 1000 °C, coupled with in situ reflection high energy electron diffraction monitoring, makes it possible to grow SrTiO3 films in the step-flow mode. Films grown in this mode showed at 4.2 K a maximum εr of 12 700, which could be tuned by 80% by applying a bias voltage of ±1 V. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124155
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  • 3
    Electronic Resource
    Electronic Resource
    YBa2Cu3O7−δ trilayer junction with nm thick PrGaO3 barrier (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1570-1572 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have established a deposition process of high quality a axis oriented YBa2Cu3O7−δ (a-YBCO) and insulating epitaxial PrGaO3 (PGO) films to fabricate a-YBCO/PGO(2.0–3.2 nm)/a-YBCO trilayer junction. The precipitate formation on the bottom a-YBCO was greatly suppressed by the atomic layer modification of the substrate surface with a wet etching and successive atomic layer epitaxy of SrO and BaO atomic layers prior to the YBCO deposition. Crack formation and residual stress in the film due to the thermal expansion mismatch along c axis of YBCO could be eliminated by inserting a buffer layer of a-YBCO deposited with changing the substrate temperature from 580 to 735 °C. The junctions showed a clear hysteresis with its current jump as large as 30%, together with the Fraunhofer diffraction. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119968
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  • 4
    Electronic Resource
    Electronic Resource
    Determination of surface polarity of c-axis oriented ZnO films by coaxial impact-collision ion scattering spectroscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 824-826 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have identified the surface polar structure of wurtzite-type ZnO films by coaxial impact-collision ion scattering spectroscopy. High-quality ZnO epitaxial films were prepared on sapphire (α-Al2O3) (0001) substrates by laser molecular beam epitaxy using a ZnO ceramic target. The (0001¯) crystallographic plane (the O face) was found to terminate the top surface of the ZnO film by comparing spectra of the films with those of well-defined (0001) and (0001¯) surfaces of bulk single crystals. The preferential [0001¯] growth direction of ZnO films is discussed from the viewpoints of the chemical interaction at the interface and surface stability against sublimation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120905
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  • 5
    Electronic Resource
    Electronic Resource
    MgxZn1−xO as a II–VI widegap semiconductor alloy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2466-2468 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a widegap II–VI semiconductor alloy, MgxZn1−xO, for the fabrication of heteroepitaxial ultraviolet light emitting devices based on ZnO. The c-axis oriented MgxZn1−xO films were epitaxially grown by pulsed laser deposition on ZnO epitaxial films and sapphire (0001) substrates using ceramic targets. Solid solution films were prepared with Mg content up to x=0.33, achieving a band gap of 3.99 eV at room temperature. MgO impurity phase segregated at x≥0.36. Lattice constants of MgxZn1−xO films changed slightly (∼1%), increasing in a axis and decreasing in c-axis direction with increasing x. These films showed ultraviolet photoluminescence at energies from 3.36 (x=0) to 3.87 eV (x=0.33) at 4.2 K. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121384
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  • 6
    Electronic Resource
    Electronic Resource
    An oxide-diluted magnetic semiconductor: Mn-doped ZnO (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3366-3368 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of an oxide-diluted magnetic semiconductor, Mn-doped ZnO, were fabricated by pulsed-laser deposition technique. Solubility of Mn into ZnO exceeds thermal equilibrium limit as a result of nonequilibrium film growth process. As Mn content is increased, the lattice constants of both a and c axes of wurtzite Zn1−xMnxO films (x〈0.35) increase and the band gap expands although considerable in-gap absorption develops. Itinerant electrons over 1019 cm−3 can be doped into the Zn1−xMnxO films by Al doping, in contrast to low carrier density in the other II–VI diluted magnetic semiconductors. The temperature dependence of the resistivity is almost metallic and considerable magnetoresistance is observed at low temperatures. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125353
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  • 7
    Electronic Resource
    Electronic Resource
    Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 980-982 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnO/Mg0.2Zn0.8O superlattices with a band-gap offset of about 0.5 eV were epitaxially grown by laser molecular-beam epitaxy on a sapphire(0001) substrate using a ZnO buffer layer. The superlattice structure with a period ranging from 8 to 18 nm was clearly verified by cross-sectional transmission electron microscopy, Auger depth profile, and x-ray diffraction. As the well layer thickness decreased below 5 nm, the photoluminescence peak and absorption edge in the photoluminescence excitation spectra showed a blueshift, indicating a quantum-size effect. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124573
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  • 8
    Electronic Resource
    Electronic Resource
    Angular distributions of photofragments generated in the two-photon dissociation of nitrogen dioxide and carbon disulfide (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 86 (1987), S. 4425-4430 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Two-photon dissociation of nitrogen dioxide and carbon disulfide at 308 nm has been studied by means of multiphoton ionization of photofragments. The angular distributions of fragments are well represented by a form of 1+β2P2(cos θ)+β4P4(cos θ). Because the intermediate state of NO2 (2B2) generated by the first one-photon process is dissociative, the coefficient β4 for the fourth degree Legendre polynomial is appreciable. The coefficient β4 for CS2 is, however, not appreciable because the intermediate CS2 (1B2) state has a long fluorescence lifetime. The angular distributions not only reveal the symmetry and lifetimes of the two-photon excited states of NO2 and CS2 but also information on the two-photon excitation process of these molecules.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.452714
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  • 9
    Electronic Resource
    Electronic Resource
    Angular distributions of photofragments from NO2 photodissociation (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 86 (1987), S. 4431-4437 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The angular distributions of recoil of NO molecules from the photodissociation of NO2 near the dissociation threshold of 397.86 nm are presented and analyzed to obtain information about the effect of molecular rotation of parent molecules on the angular distribution. For the one-photon dissociation process, as laser wavelengths become closer to the dissociation threshold, the anisotropy of the angular distribution is reduced. When laser wavelengths become larger than the threshold, NO2 dissociates via two-photon absorption, and the photofragment angular distribution again becomes anisotropic reflecting the second photon absorption.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.452715
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  • 10
    Electronic Resource
    Electronic Resource
    Parallel fabrication of artificially designed superlattices by combinatorial laser MBE (1999)
    Springer
    Applied physics 69 (1999), S. S29 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 39.10.+j
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. A system for parallel synthesis of atomically regulated lattices and nano-structured heterojunctions has been developed. This combinatorial laser MBE system is composed of a UHV-PLD chamber, scanning RHEED for in situ diagnostics of reactions at various areas of substrate surface, a pair of fixed and moving masks to define the film deposition area, and a computer for controlling the operation conditions as functions of deposition area and time. In this system, oxide layered lattice strips were deposited in parallel on a SrTiO3 substrate under RHEED observation of individual strips with different compositions and/or layer thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003399900362
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