Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles: DFG German National Licenses  (50)
  • 1995-1999  (33)
  • 1980-1984  (16)
  • 1940-1944  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Substrate mediated photochemistry on a molecular surface: OCS on Ag clusters (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 2474-2479 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photochemistry of carbonyl sulfide (OCS) adsorbed to small silver clusters is shown to exhibit a striking odd–even dependence on the number of Ag atoms in the cluster. OCS is found to desorb nondissociatively from even numbered silver clusters. In contrast, on odd silver clusters, a new product channel corresponding to AgnS is observed. Parallels are found with the photochemistry of adsorbates on extended surfaces. Cross-section measurements for OCS desorption from Ag10 and wavelength-dependent measurements of OCS dissociation on Ag9 both indicate that electronic excitation of the cluster initiates chemistry, analogous to substrate mediated surface photochemistry. The size dependence is reasonably explained in terms of a charge-transfer mechanism involving an ion-pair state of the AgnOCS complex. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.476818
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3 (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3228-3237 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect structures were investigated by transmission electron microscopy for GaN/Al2O3 (0001) epilayers grown by metal-organic chemical vapor deposition using a two-step process. The defect structures, including threading dislocations, partial dislocation bounding stacking faults, and inversion domains, were analyzed by diffraction contrast, high-resolution imaging, and convergent beam diffraction. GaN film growth was initiated at 600 °C with a nominal 20 nm nucleation layer. This was followed by high-temperature growth at 1080 °C. The near-interfacial region of the films consists of a mixture of cubic and hexagonal GaN, which is characterized by a high density of stacking faults bounded by Shockley and Frank partial dislocations. The near-interfacial region shows a high density of inversion domains. Above ∼0.5 μm thickness, the film consists of isolated threading dislocations of either pure edge, mixed, or pure screw character with a total density of ∼7×108 cm−2. The threading dislocation reduction in these films is associated with cubic to hexagonal transformation of the nucleation layer region during high temperature growth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363264
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Raman scattering studies of surface modification in 1.5 MeV Si-implanted silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5910-5915 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface layer of crystalline silicon implanted with 1.5 MeV Si ions with doses ranging from 1×1011 to 1×1015 Si+/cm2 has been studied by Raman scattering. Raman line intensities, shapes and shifts have been used to investigate the defects in the near-surface layer. Above doses of 1×1013 Si+/cm2, Raman provides evidence for the presence of amorphous silicon islands within the crystalline structure. The phonon-confinement model (PCM) which is based on the breakdown in wavevector selection rules due to scattering from finite domain sizes has been used to estimate the effective average distance between defects. The PCM has also been modified by introducing a term attributable to residual stress in the near-surface layer. By fitting experimental Raman spectra with the modified PCM, the Raman line shifts due to stress effects are decoupled from those due to phonon confinement. The mechanisms for the stress creation are also discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359171
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Moessbauer and EPR Studies of the Binuclear and Trinuclear Antiferromagnetically Coupled Iron(III)-Binding Sites in Ferreascidin (1995)
    s.l. : American Chemical Society
    Inorganic chemistry 34 (1995), S. 1487-1494 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic00110a029
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Copper(II) complexes of the antiulcer drug cimetidine (1980)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 102 (1980), S. 7782-7784 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00546a027
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Transport properties of two-dimensional electron gases containing InAs self-assembled dots (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2468-2470 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the transport properties of two-dimensional electron gases formed in GaAs/AlGaAs heterostructures in which InAs self-assembled quantum dots have been inserted in the center of a GaAs quantum well. We observed that, while maintaining a constant carrier density, the mobility increased as the InAs dot density was reduced. The ratio of the transport to the quantum lifetime was measured to be approximately five with the dominant scattering mechanism attributed to short-range scattering from the inserted InAs dots. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122484
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Modification of InAs quantum dot structure by the growth of the capping layer (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 49-51 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs quantum dots inserted at the middle of a GaAs quantum well structure have been investigated by transmission electron microscopy and scanning transmission electron microscopy. We find that the growth condition of the overlayer on the InAs dots can lead to drastic changes in the structure of the dots. We attribute the changes to a combination of factors such as preferential growth of the overlayer above the wetting layers because of the strained surfaces and to the thermal instability of the InAs dots at elevated temperature. The result suggests that controlled sublimation, through suitable manipulation of the overlayer growth conditions, can be an effective tool to improve the structure of the self-organized quantum dots and can help tailor their physical properties to any specific requirements of the device applications. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121719
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Assessment of the effect of head and neck position on upper airway anatomy in sedated paediatric patients using Magnetic Resonance Imaging (1995)
    Oxford, UK : Blackwell Publishing Ltd
    Pediatric anesthesia 5 (1995), S. 0 
    Details
    ISSN: 1460-9592
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Upper airway patency can be compromised when children (or adults) receive sedative medication. The study examines the effect of two different positioning techniques (use of the ‘sniff position pillow’ (SPP) and shoulder elevation (SE) on maintenance of upper airway patency using MRI in 21 children sedated with intravenous pentobarbital (5–8 mg·kg-1). Children positioned on the SPP had a significantly greater degree of atlanto-occipital extension (P 〈 0.05), and a significantly greater nasopharyngeal diameter (P 〈 0.05) than those with shoulder elevation. The degree of atlanto-occipital extension was not significantly correlated with pharyngeal diameter (R = -0.68). No clinical signs of upper airway obstruction were noted and oxygen desaturation did not occur. Both positioning techniques were consistently associated with upper airway patency under the study conditions described. In obligate nose breathers to whom sedative agents are administered, the SPP is more likely to maintain nasopharyngeal patency than shoulder elevation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1460-9592.1995.tb00292.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Effect of Modified Atmosphere Storage on C. Botulinum Toxigenesis and the Spoilage Microflora of Salmon Fillets (1981)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 46 (1981), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Modified atmosphere (MA) storage in conjunction with refrigeration has been shown to significantly increase the shelf life of fresh fish and other products, but the effects, if any on the outgrowth and toxigenesis of C. botulinum are unknown. A commercial system was duplicated in the laboratory and the effects of modified atmosphere on the outgrowth of C. botulinum types A, B, and E were observed in inoculated salmon fillets and sandwiches stored at 4.4°C and 22.2°C. Inoculated samples stored in air at the same temperatures were used as controls. No toxigensis was observed in either the air or modified samples stored at 4.4°C, but all inoculated samples held at 22.2°C were toxic within 2–3 days. Spoilage generally preceded toxigenesis. In a concurrent study, the tendency of CO2 environments to repress the growth of gram negative bacteria to a greater extent than gram positive bacteria was also noted.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1981.tb04450.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Applications of Accelerator Mass Spectrometry (1984)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Earth and Planetary Sciences 12 (1984), S. 39-59 
    Details
    ISSN: 0084-6597
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ea.12.050184.000351
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...