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  • Artikel: DFG Deutsche Nationallizenzen  (142)
  • 1995-1999  (142)
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  • Artikel: DFG Deutsche Nationallizenzen  (142)
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  • 21
    Digitale Medien
    Digitale Medien
    Evidence for cathodoluminescence from SiOx in porous Si (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 215-217 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The cathodoluminescence (CL) from porous silicon and thermal-oxidized porous silicon was examined by x-ray spectroscopy and photoluminescence (PL). Two dominant CL bands were observed at 460 nm (2.7 eV) and 650 nm (1.9 eV), respectively, which were not found in the PL spectrum. Electron beam irradiation caused degradation and/or increase in luminescence, and the two bands showed different variations. It has been concluded that electron beam excitation mainly occurs in amorphous SiO2, and the two bands are caused from different defects in amorphous SiO2 covering the porous silicon. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.113138
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  • 22
    Digitale Medien
    Digitale Medien
    Permanent photoreduction of Sm3+ to Sm2+ inside a sodium aluminoborate glass by an infrared femtosecond pulsed laser (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 10-12 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the observation of permanent photoreduction of Sm3+ to Sm2+ inside a transparent and colorless Sm3+-doped sodium aluminoborate glass. After irradiation by an 800 nm focused femtosecond pulsed laser, the focused part of the laser in the glass became orange. Absorption and photoluminescence spectra showed that a part of Sm3+ was reduced to Sm2+ after the laser irradiation. Electron spin resonance spectra of the glass before and after the laser irradiation were also measured. The observed phenomenon is inferred to be useful for the fabrication of optical memory devices with an ultrahigh storage density. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.123117
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  • 23
    Digitale Medien
    Digitale Medien
    Observation of ultrafast all-optical modulation based on intersubband transition in n-doped quantum wells by using free electron laser (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4136-4138 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A picosecond-range all-optical modulation based on the nonlinear interaction between interband- and intersubband-resonant light in GaAs/AlGaAs multiple quantum wells was demonstrated. A free electron laser (FEL) with a very short pulse width (〈10 ps) was used for the intersubband excitation. The dependence of the modulation depth on the wavelength of the intersubband-resonant light was investigated by utilizing the wide tunability of the FEL. The result is in good agreement with the intersubband absorption spectrum of the multiple quantum wells measured by FT-IR spectroscopy, which indicates that the observed modulation is indeed based on the intersubband transition induced by the FEL. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.117838
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  • 24
    Digitale Medien
    Digitale Medien
    Contrast mechanisms in scanning ion microscope imaging for metals (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 611-613 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The contrast of the secondary electron images in scanning ion microscopy (SIM) is compared with that in scanning electron microscopy (SEM) with ultrahigh vacuum for Al, Cu, Ag, and Au metals deposited on the Si(100) clean surface. The order of the secondary electron yields as a function of the atomic number (Z2) for ion bombardment is opposite to that for electron bombardment. The brightness of the secondary electron images observed by a focused Ga+ ion beam at 30 keV decreases with increasing Z2, while that by the electron beam increases with Z2. On the other hand, the order of the total secondary ion yields in SIM increases with Z2. The secondary electron image observed by a focused Ar+-ion beam at 3 keV shows the similar contrast to that of the Ga+-ion beam. The different Z2 dependence of the secondary electron yields between SEM and SIM was quantitatively confirmed by the total secondary electron spectra and is discussed based on the range profile below the surface, and it is concluded that the decrease of the secondary electron yields in SIM is attributed to the increase of the reflected ions at the surface with increasing Z2. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.121872
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  • 25
    Digitale Medien
    Digitale Medien
    Size-dependent second-harmonic generation by nanocrystals prepared by plasma-enhanced chemical-vapor deposition (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 4103-4105 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The second-harmonic generation (SHG) from silicon nanocrystallites in polycrystalline films prepared by low-temperature plasma-enhanced chemical-vapor deposition has been studied. We observed an increase in the SHG signal due to the quantum-size effect and shape distortion by decrease in the sizes of crystallites. It was shown that the resonant SHG spectra have a size-dependent fine structure. Also, the power dependence of the SHG response from polycrystalline silicon films was investigated. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.125550
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  • 26
    Digitale Medien
    Digitale Medien
    Photoassisted Chemisorption of NO on ZnO (1995)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 13307-13309 
    Details
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/j100036a002
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  • 27
    Digitale Medien
    Digitale Medien
    Type Ib/Ic/IIb/II-L Supernovae and Binary Star Evolution (1995)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 759 (1995), S. 0 
    Details
    ISSN: 1749-6632
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Allgemeine Naturwissenschaft
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1749-6632.1995.tb17564.x
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  • 28
    Digitale Medien
    Digitale Medien
    Low-energy reactive ion scattering as a probe of surface femtochemical reaction: H+ and H− formation on ionic compound surfaces (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 2226-2239 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: Capture and loss of valence electrons during low-energy (50–500 eV) proton scattering from some alkali–halide surfaces such as LiCl, NaCl, and KF have been investigated in comparison with those from the TiO2(110) and Cs-adsorbed Si(100) surfaces. The primary H+ ion survives neutralization when scattered from the highly ionized target species existing on the surface. For H− ion formation, a close atomic encounter with individual target ions is found to be important; the H− ion is formed more efficiently on the cationic site than on the anionic site despite the fact that the valence electron is spacially localized on the latter. This is because the charge state of scattered hydrogen is determined during a transient chemisorption state and amphoteric hydrogen tends to be coordinated negatively (positively) on the cationic site (the anionic site). The final charge state of scattered hydrogen is fixed at a certain bond-breaking distance (∼5.0 a.u.) from the surface where the well-defined atomic orbital of hydrogen evolves. The competing nonlocal resonance tunneling is suppressed at the ionic-compound surfaces due to the existence of a large band gap, so that hydrogen is scattered without losing the memory of such a transient chemisorption state. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.477835
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  • 29
    Digitale Medien
    Digitale Medien
    Experimental evidence of surface conduction in AlSb–InAs tunneling diodes (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 953-958 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The peak-to-valley ratio of AlSb–InAs resonant tunneling diodes decreases as the diameter of the diode decreases due to the surface current. To clarify the origin of the surface current, we studied AlSb–InAs single-barrier diodes with various diameters and barrier thicknesses at various temperatures. We conclude from experimentally obtained results that bulk current is caused by tunneling through an AlSb barrier influenced by the band structure and surface current is caused by an electron emission from band-gap surface states at the AlSb barrier based on the Poole–Frenkel mechanism with ionization energy of 0.24 eV. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.369216
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  • 30
    Digitale Medien
    Digitale Medien
    Micromagnetic behavior and recording performance in high density 5 Gb/in.2 CoCrPtTa medium : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3937-3939 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Micromagnetic studies of the magnetization process in high density 5 Gb/in.2 CoCrPtTa and 0.8 Gb/in.2 CoCrTa media were carried out in conjunction with recording performance measurements. The maximum value of the δM curves measured at room temperature and at 373 K is smaller for CoCrPtTa compared to CoCrTa which indicates lesser intergranular exchange coupling in the quaternary medium. At room temperature, the Barkhausen volume V*, which is the smallest switching unit in magnetization reversal, corresponds approximately to one grain for CoCrPtTa but to three to four grains for CoCrTa. These results are consistent with the lower media noise found for CoCrPtTa especially at high bit densities. A decrease in V* to the size of one grain for CoCrTa is observed for temperatures below 200 K. The reduced intergranular exchange is confirmed by δM measurements at 77 K. Low coupling, however, leads to low values of Mr which leads to a reduction in the reading signal. The value of Mr for CoCrTa at 77 K is 60% greater than that of CoCrPtTa at room temperature despite the reduced exchange coupling indicating that larger values of Mr can still be achieved while confining the switching volume to no more than a grain. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.364702
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