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  • Articles: DFG German National Licenses  (4)
  • 1995-1999  (4)
Source
  • Articles: DFG German National Licenses  (4)
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence excitation study of nitrogen-doped zinc selenide epilayers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6723-6727 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence excitation (PLE) spectroscopy at liquid-helium temperature is used to study six ZnSe:N epilayers grown by molecular beam epitaxy. These samples represent nitrogen-doping levels ranging from less than 1017 to 3×1019 cm−3. The luminescence emission bands from the heavily doped samples exhibit peak energies varying from 2.45 to 2.61 eV. The energy range over which the PLE signal intensity decays and the energy difference between the onset of this decay and the PL peak energy are essentially the same for all the heavy-doped samples. A model is proposed to explain the PL and PLE results for a semiconductor in the presence of potential fluctuations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370185
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Observation of singly ionized selenium vacancies in ZnSe grown by molecular beam epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2274-2276 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron paramagnetic resonance (EPR) has been used to investigate singly ionized selenium vacancy VSe+ centers in ZnSe epilayers grown by molecular beam epitaxy (MBE). The study included undoped and nitrogen-doped films. Spectra taken at 8 K and 9.45 GHz, as the magnetic field was rotated in the plane from [100] to [010], showed an isotropic signal at g=2.0027±0.0004 with a linewidth of 5.8 G. In the two samples where this signal was observed, estimates of concentration were approximately 1.1×1017 and 6.3×1017 cm−3. The appearance of the EPR signal correlated with an increase in the Zn/Se beam equivalent pressure ratio (during growth) in undoped films and with an increase in the nitrogen concentration in doped films. We conclude that the singly ionized selenium vacancy may be a dominant point defect in many MBE-grown ZnSe layers and that these defects may play a role in the compensation mechanisms in heavily nitrogen-doped ZnSe thin films. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118836
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Investigation of donor-acceptor pair luminescence from ZnSe:N epilayers (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5743-5749 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence (PL) due to donor-acceptor pair recombination was monitored in a series of nitrogen-doped ZnSe epilayers grown by molecular beam epitaxy on GaAs substrates. Emission energies were measured for incident power densities ranging from 10−4 to 10 W/cm2 in samples having different nitrogen doping levels. An ionization energy of 50 meV for the "deep" donor in a lightly doped ZnSe:N sample is determined using power dependence data. Heavily nitrogen-doped samples (≥8×1018 cm−3) provided evidence for a second deeper donor with an ionization energy greater than 100 meV. In addition, we show the importance of accounting for interference effects when identifying the emission peaks in the PL spectra from heavily doped ZnSe:N. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368865
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Compensating defects in heavily nitrogen-doped zinc selenide: A photoluminescence study (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1724-1726 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) from a heavily nitrogen-doped ZnSe epilayer grown by molecular beam epitaxy was studied as a function of excitation wavelength, power density, and temperature. Also, the time decay of the PL emission was measured. Detailed analysis of the PL data indicates that the deep broad emission is composed of three distinct recombination processes, two are dominant at low power and a third can be detected at higher excitation power. These three bands are labeled NI, NII, and NIII with corresponding peak energies at 2.54, ∼2.58, and 2.65 eV. The NI band is accompanied by phonon replicas of energy 69±3 meV. The behaviors of the NI, NII, and NIII bands are consistent with intracenter recombination, donor–acceptor pair recombination, and electron–acceptor recombination, respectively. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118681
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    Paper (German National Licenses)
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