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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of defect-related optical absorption in ZnGeP2 (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6677-6681 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A broad optical absorption band with a peak near 1 μm is present in most single crystals of ZnGeP2. These same crystals have an electron paramagnetic resonance (EPR) signal which has been assigned to singly ionized zinc vacancies. A direct correlation between the intensity of the optical absorption at 1 μm and the intensity of the EPR signal has been established using a set of ZnGeP2 crystals where this absorption varied widely. These results suggest that the singly ionized zinc vacancy acceptor plays a direct role in the electronic transition(s) responsible for the 1 μm optical absorption. In separate experiments, it was found that illuminating the ZnGeP2 crystals with a He–Ne laser (632.8 nm) while at temperatures near 25 K produces an increase in the absorption at 1 μm and an increase in the zinc vacancy EPR spectrum. These latter results provide further evidence that the absorption at 1 μm is associated with the singly ionized zinc vacancy acceptor. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371743
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  • 2
    Electronic Resource
    Electronic Resource
    Observation of singly ionized selenium vacancies in ZnSe grown by molecular beam epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2274-2276 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron paramagnetic resonance (EPR) has been used to investigate singly ionized selenium vacancy VSe+ centers in ZnSe epilayers grown by molecular beam epitaxy (MBE). The study included undoped and nitrogen-doped films. Spectra taken at 8 K and 9.45 GHz, as the magnetic field was rotated in the plane from [100] to [010], showed an isotropic signal at g=2.0027±0.0004 with a linewidth of 5.8 G. In the two samples where this signal was observed, estimates of concentration were approximately 1.1×1017 and 6.3×1017 cm−3. The appearance of the EPR signal correlated with an increase in the Zn/Se beam equivalent pressure ratio (during growth) in undoped films and with an increase in the nitrogen concentration in doped films. We conclude that the singly ionized selenium vacancy may be a dominant point defect in many MBE-grown ZnSe layers and that these defects may play a role in the compensation mechanisms in heavily nitrogen-doped ZnSe thin films. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118836
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  • 3
    Electronic Resource
    Electronic Resource
    Compensating defects in heavily nitrogen-doped zinc selenide: A photoluminescence study (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1724-1726 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) from a heavily nitrogen-doped ZnSe epilayer grown by molecular beam epitaxy was studied as a function of excitation wavelength, power density, and temperature. Also, the time decay of the PL emission was measured. Detailed analysis of the PL data indicates that the deep broad emission is composed of three distinct recombination processes, two are dominant at low power and a third can be detected at higher excitation power. These three bands are labeled NI, NII, and NIII with corresponding peak energies at 2.54, ∼2.58, and 2.65 eV. The NI band is accompanied by phonon replicas of energy 69±3 meV. The behaviors of the NI, NII, and NIII bands are consistent with intracenter recombination, donor–acceptor pair recombination, and electron–acceptor recombination, respectively. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118681
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  • 4
    Electronic Resource
    Electronic Resource
    Electron paramagnetic resonance of a cation antisite defect in ZnGeP2 (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1218-1220 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron paramagnetic resonance (EPR) has been used to characterize a new donor center in ZnGeP2 crystals. An equally spaced triplet of lines with a 1:2:1 intensity ratio is observed at g=2.0026 when a crystal is exposed to 633 nm light (below band gap) while at temperatures below 50 K. These EPR lines are approximately 70 G wide and they exhibit only a slight angular dependence (their separation changes from 189 to 179 G as the magnetic field is rotated from the c axis to the a axis). The proposed model for the new donor is a germanium ion on a zinc site. This antisite center is paramagnetic (S=1/2) in the singly ionized state (i.e., GeZn+) and the triplet nature of its EPR spectrum is attributed to nearly equal strong hyperfine interactions with two of the nearest-neighbor phosphorus ions. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123504
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  • 5
    Electronic Resource
    Electronic Resource
    Role of silicon impurities in the trapping of holes in KTiOPO4 crystals (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1063-1068 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron paramagnetic resonance (EPR) has been used to characterize a new hole trap in flux-grown KTiOPO4 crystals. This center is formed at room temperature when the crystals are exposed to either 60 kV x rays or a pulsed 355 nm laser beam. Principal g values measured at room temperature are 2.0030, 2.0102, and 2.0320. The intensity of the EPR spectrum is considerably larger in a silicon-doped sample, thus suggesting that the responsible defect consists of a hole trapped on an oxygen ion adjacent to a silicon impurity located on a phosphorus site. Also, a broad optical absorption band peaking near 500 nm has been observed in the irradiated samples. The silicon-associated hole centers thermally decay over a period of several days at room temperature as electrons are released from Ti3+ traps. Analysis of hole-center decay curves obtained at three temperatures (291, 300, and 311 K) has shown that the kinetics of this electron-release process are primarily second order. The activation energy is approximately 0.80 eV and the "frequency" factor is approximately 4.1×109 s−1. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369229
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