Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles: DFG German National Licenses  (52)
  • 1990-1994  (39)
  • 1985-1989  (13)
  • 1
    Electronic Resource
    Electronic Resource
    Magnetic anisotropy by ferromagnetic particles alignment in a magnetic field (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4493-4495 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic and optical properties of films composed of ferromagnetic fine particles aligned in a magnetic field were investigated. The spin-coated films were prepared by using a solution of magnetite fine particles dissolved in water-diluted polyvinyl alcohol (PVA) on glass substrates, and followed by drying at 80 °C and solidifying at 200 °C in a magnetic field. Linear-chain clusters of magnetite particles were formed in a considerably weak field below 1 kOe, which give rise to magnetic and optical uniaxial anisotropies. Both properties vary depending on preparation conditions such as the particle concentration, the viscosity of the solution, and the field strength during drying.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344892
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Role of a biased electrode in the first stage of electron cyclotron resonance multicharge ion source : Proceedings of the 5th international conference on ion sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1116-1118 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The fundamental physics of the beneficial effect of a biased electrode, positioned in the first stage, on the output ion currents have been investigated on the basis of the measurements of plasma parameters. Conventional Langmuir probes were used for diagnostics in both stages. It was found that the plasma space potential in the first stage changes with the variation of disk potential and consequently a potential difference occurs between the first stage and the second one. Without the first stage plasma, the beneficial effect was also obtained when negative potential was directly applied to the first stage chamber wall. Probe measurements showed that the electron density and temperature in the second stage increased with the application of negative potential. It was suggested that the beneficial effect is mainly caused by the improvement of the electron confinement in the second stage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145082
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Trial use of carbon-fiber-reinforced plastic as a non-Bragg window material of x-ray transmission : INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2432-2435 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The carbon-fiber-reinforced plastic (CFRP) that can be used for window material in place of beryllium is a composite-type material comprising twisted carbon fibers and bisphenol-A plastic. Since the constituent elements of hydrogen, carbon, and nitrogen are thoroughly dispersed as a compound, the mass absorption coefficient of CFRP is somewhat larger than that of beryllium. The diffraction pattern of CFRP shows only a single halo pattern without a Bragg-like peak which is found in Mylar. Through x-ray diffraction, CFRP was confirmed to be practical for use as a non-Bragg window material with a moderately low mass-absorption coefficient and could be substituted for crystalline beryllium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140738
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Comparison of As species (As4 and As2) in molecular beam epitaxial growth of AlxGa1−xAs (x=0.2–0.7) on (100) GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2415-2417 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Systematic studies have been made for the first time on the basic properties of AlxGa1−xAs (x=0.2–0.7) grown by molecular beam epitaxy in the wide growth temperature range of 540–780 °C with As4 and As2. The forbidden growth temperature region (FTR), where the specular smooth surface cannot be obtained, has been found to depend strongly upon both the As species and the AlAs mole fraction x. FTR does not change with x in the case of As4; however, in the case of As2, FTR does not exist for x=0.2 and it increases with x from 0.3–0.7. Photoluminescence of n-Al0.3Ga0.7As (Si=1×1018 cm−3) grown with As2 shows lower intensity and higher sensitivity to growth temperature than those of samples grown with As4. Deep level transient spectroscopy has been measured on n-Al0.7Ga0.3As (Si=2×1016 cm−3). New electron traps are found in layers grown with As2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106033
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial growth of AlxGa1−xAs (x=0.2–0.7) on (111)B-GaAs using As4 and As2 (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2287-2289 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Basic properties of AlxGa1−xAs (x=0.2–0.7), grown by molecular beam epitaxy on 0.5°-tilted (111)B-GaAs, are studied. We have employed the wide substrate temperature, Ts, range of 540–740 °C and different As species; As4 and As2. The surface morphology has been found to depend strongly upon the As species; a specular surface morphology cannot be obtained when using As2 whereas a specular smooth surface can be obtained at high temperatures when using As4. Photoluminescence intensity of n-Al0.3Ga0.7As (Si=1×1018 cm−3) grown at low Ts (〈620–630 °C) does not depend upon the As species and is considered to be determined by defects, such as microtwins and stacking faults, which have been observed by transmission electron microscopy. At high Ts ((approximately-greater-than)650 °C) photoluminescence intensity is lower for the case of As2 than As4 and this could be due to point defects, such as As interstitials and/or antisite As (AsGa). Deep level transient spectroscopy has been measured on n-Al0.7Ga0.3As grown on (100)- and (111)B-substrates with As4.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106045
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Influence of silicon wafer surface orientation on very thin oxide quality (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 405-407 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied effects of silicon wafer surface orientation on very thin oxide quality, testing Si(100) and (111) wafers. It has been found that the very thin oxide structure is dominating by the silicon wafer surface orientation, and that when Si(111) is oxidized, SiO2/Si(111) interface microroughness increases as oxide gets thicker than 10 nm, resulting in a degradation of oxide films quality on Si(111). When oxide thickness is decreased to less than 10 nm, SiO2/Si interface smoothness is maintained similar to Si(100) and (111) but the SiO2/Si interface exhibits larger interface charges and larger flatband voltage shift for Si(111) than for Si(100).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108944
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    High power AlGaAs quantum well laser diodes prepared by molecular beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1718-1720 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stable and reliable AlGaAs high power single quantum well lasers prepared by molecular beam epitaxy have been realized. We have prepared both 50-μm devices operating in multiple modes and ridge-waveguide single transverse-mode devices. Good reliability has been confirmed under the operating condition of 500 mW at 50 °C for the former type of devices and under the condition of 50 mW at 50 °C for the latter type of devices over 1000 h. These results indicate that molecular beam epitaxy is capable of making reliable high power laser diodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110693
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Effect of DP-1904, a New Thromboxane A2 Synthetase Inhibitor, on Guinea Pig Experimental Asthma (1991)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 629 (1991), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1991.tb37999.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Evaluation of calcium hydroxide-containing root canal sealers with an improved rabbit ear chamber (1994)
    Oxford, UK : Blackwell Publishing Ltd
    Dental traumatology 10 (1994), S. 0 
    Details
    ISSN: 1600-0595
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract An improved rabbit ear chamber was used to evaluate calcium hydroxide-containing root canal sealers on their potential in induce dystrophic calcification in connective tissue. Four sealers and two control materials were introduced into the chambers and the effects of these materials on the living vascular tissue were observed continuously under a biomicroscope up to 9 weeks. Conventional histopathological investigation and examinations with a scanning electron microscope and an X-ray microanalyzer were done to supplement the results. Sealapex and Calvital (Ca(OH)2+ iodoform) revealed almost the same tissue reaction as calcium hydroxide-saline paste; they rapidly made a precipitate-barrier of calcium phosphate in the connective tissue, inducing calcification. However, Dentalis KEZ(ZnO-ca(OH)2+ eugenol) caused mild disorders of microcirculation without calcification, as well as Canals(ZnO + eugenol). New A (Ca(OH)2+ fatty acid) had good compatibility with micro-vessels as well as New B(ZnO + fatty acid), however they induced no calcification and disintegrated rapidly in the tissue. These sealers were reclassified according to what they actually bring about in the tissue, not according to what they include.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1600-9657.1994.tb00077.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    In0.2Ga0.8As single strained quantum well lasers with GaAs/AlGaAs short-period superlattice barrier layers grown by molecular beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5285-5287 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In0.2Ga0.8As single strained quantum well lasers with GaAs/Al0.45Ga0.55As short-period superlattice barrier (SPSB)layers have been successfully prepared using molecular beam epitaxy although a part of SPSB has been grown in the forbidden temperature region for AlGaAs, where the specular smooth bulk AlGaAs cannot be grown. The averaged AlAs mole fraction of the present SPSB is 0.25, which gives the heterobarrier height larger than that of the conventional GaAs barrier layers. The threshold temperature sensitivity factor T0 of the laser with SPSB has been measured to be as low as 240 K, which is much larger than that of 90 K in the laser with GaAs barrier layers. This improvement results from the reduction of carrier leakage from quantum well to barrier layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354274
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...