ISSN:
1572-8986
Keywords:
Plasma etching
;
GaAs devices
;
low temperature
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Technology
Notes:
Abstract Dry etching of common masking materials used in GaAs device technology, was examined down to temperatures of −30°C. The etch rates of SiNx, SiO2, and W in SF6/Ar are reduced below 0°C, but the anisotropy of the etching is improved at low temperature. Microwave enhancement of the SF6/Ar discharges produces increases in etch rates of several times at 25°C, but much lower increases at −30°C substrate temperature. The underlying GaAs surface shows increased S and F coverage after low-temperature etching, but these species are readily removerd either by anex-situ wet chemical cleaning step or an in-situ H2 plasma exposure. Photoresist etching is less sensitive to temperature, and anisotropic profiles are produced between −30 and +60°C in pure O2 discharges.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01570209
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