ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The electrical parameters, i.e. mobility, resistivity and ionization energy, of the dopant (Se) have been determined at different depths in phosphorus diffused GaAs. These values have been compared with those obtained for the epitaxially grown specimens.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01209462
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