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  • Articles: DFG German National Licenses  (1)
  • 73  (1)
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  • Articles: DFG German National Licenses  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Experimental evidence for GaAs surface quality affecting ohmic contact properties (1976)
    Springer
    Applied physics 10 (1976), S. 97-99 
    Details
    ISSN: 1432-0630
    Keywords: 73 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An experimental study is described of barrier heights at the junction between (111) faces of semiconductingn-type bulk GaAs and alloyed In−Ge−Ag metal contacts. It is observed that strong corrugation of the semiconducting surface causes the barrier height to be higher than that of flat surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00929535
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