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  • 11
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1792-1794 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth quality of thin, superconducting YBaCuO films has been compared on random and (100) oriented yttrium-stabilized zirconia substrates using x-ray diffraction and ion channeling experiments. Superior growth is observed on (100) substrates with narrow mosaic distributions (0.4°) and a minimum yield value of 10% in the channeling experiment. The lattice matching required for epitaxial growth is achieved by azimuthal adjustment of the film plane with respect to the substrate. The superior growth is reflected in the film properties like the critical current density yielding values of 2×106 A/cm2 at 77 K.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2367-2369 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin films of YBa2Cu3O7−x with thicknesses down to 2 nm were grown on(100)SrTiO3 and (100)MgO by inverted cylindrical magnetron sputtering. Metallic behavior and zero resistance temperatures above 4.2 K were obtained in 3-nm-thick films on SrTiO3. Thinner films revealed temperature-activated conductivity and only partial transitions to superconductivity due to inhomogeneities in the film morphology. On MgO, the critical film thickness leading to deteriorations of the transport properties was 6 nm. An analysis of the fluctuation-enhanced conductivity near Tc in terms of the Aslamazov–Larkin theory [Phys. Lett. A 26, 238 (1968)] revealed three-dimensional behavior even in the thinnest fully superconducting films.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 754-759 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Void shape changes induced by electromigration pose reliability problems in Al-based interconnects. Recent observations have shown that a rounded void sometimes collapses to a transverse slit in an interconnect with bamboo-like grain structure. This article provides a linear stability analysis for a circular void that is only partially conductive in an otherwise infinite conductive medium. The relation between the inner conductivity (i.e., the conductivity of the medium in the void) and the critical remote electric field intensity, Ecr, for the linear stability of the void is established. It is proven that when the inner conductivity becomes zero, Ecr goes to infinity, and we can look upon the inner conductivity of a vacuum void as zero. That is why the vacuum circular void is linearly stable. It is also shown that when the inner conductivity is very small, the stability of a void is sensitive to it. From the computational results, we know that if the inner conductivity is 0.1% of that outside the void, the Ecr is only twenty times of that for the dislocation loop case. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 14
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superlattices of YBa2Cu3O7−x/YyPr1−yBa2Cu3O7−x(y=0.8 and 0.0) have been successfully grown in situ on MgO and LaAlO3 by using a multitarget pulsed laser deposition system. Satellite peaks have been observed in x-ray diffraction for the superlattices with modulation wavelengths from about few tens of angstroms to few hundred angstroms. The x-ray diffraction measurements also indicate that the multilayers have c axis normal to the substrates. Good crystallinity has been observed in the superlattices with He ion backscattering minimum yields of about 10%, indicating highly oriented growth. The presence of a periodic layer structure was further confirmed by the observation of composition oscillations in these structures by secondary-ion mass spectrometry.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1064-1066 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For crystalline advanced materials, such as the high transition temperature oxide superconductors, the growth of defect-free crystals is often the most sought after desideratum because it opens the doors to fundamental studies and the development of practical applications. We report the observation of YBa2Cu3O7−x(123) thin films having unprecedented structural perfection, at temperatures near 700 °C on [001] LaAlO3. The film's c axis is in the surface plane, unlike films grown at higher temperatures. This orientation has important advantages for device applications and fundamental studies. The Tc,0 is only 70 K, presumably due to oxygen deficiency caused by thermal stresses; if so, it should be possible to raise the Tc,0 by relieving these stresses.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 96-98 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical spectroscopic studies of the plasma generated by inverted cylindrical magnetron sputtering of the high-temperature superconductor YBa2Cu3O7−x reveal strong ionic emissions from cation elements as well as from the sputter gases. The emissions of cationic ions are weakened drastically when O2 is added into the sputter gas indicating the dominating role of ions in the reaction with oxygen to form gas phase oxides. The formation of gas phase oxides is proposed to be an important precursor step for the in situ deposition of YBa2Cu3O7−x thin films.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 310-312 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth features of YBa2Cu3O7−x thin films on (100) MgO substrates were studied by He ion channeling and x-ray diffraction measurements. A minimum yield value of 7% at 2 MeV He ion energy and a standard deviation of the crystallite misorientation of only 0.1° show that epitaxial growth (c-axis oriented) is achieved despite a large lattice mismatch of about 9% between the film and the substrate. Detailed studies of the energy dependence of the dechanneling yield at the film-substrate interface for films of different thickness reveal the presence of dislocations probably formed by strain relief in the initial state of growth. Stacking faults appear as the main defect structure in the bulk of the films.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3357-3357 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In recent work, multilayers with band-tailored optics for dual energy digital subtraction angiography (DDSA) applications have been designed and tested at SSRL. Control of various multilayer parameters, including period grading, ratio of high-to-low Z material thickness, number of layers, etc., was used to produce reflectors with bandwidths ranging from 0.6%–10% and efficiencies in the 30%–95% range. In this paper, we consider the control of multilayer bandshapes and the implementation of double-reflection multilayer configurations to further control the first harmonic (33 keV) bandwidth and to suppress or eliminate the 66 keV and 99 keV harmonics present on angiography beamlines driven by wiggler or micropole undulator sources. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1427-1429 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetoresistance of epitaxial Nd0.7Sr0.3MnOδ thin films has been studied. A giant magnetoresistance, with more than 4 orders of magnitude change in resistance (−ΔR/RH(approximately-greater-than)106%), was obtained at ∼60 K and a magnetic field of 8 T. This giant magnetoresistance (GMR) ratio is about one order of magnitude larger than the highest value reported previously which was observed in La–Ca–Mn–O film. We have also obtained a large GMR ratio with −ΔR/RH(approximately-greater-than)3000% for H=5 T in an in situ Nd0.7Sr0.3MnOδ thin film, a much larger effect than the previous results in doped manganese oxide films in which a large GMR ratio was obtained only in postannealed samples. Our results also show that the GMR effect in these films can be strongly influenced by the thin-film preparation conditions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1744-1746 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric constant (large-closed-square) of thin epitaxial SrTiO3 films used as dielectric layers in high Tc superconducting field-effect devices has been studied. (large-closed-square) in these thin films was found to have much weaker dependence on temperature and applied electric field than the bulk material. The breakdown characteristics of gate structures containing SrTiO3 dielectric layers are strongly influenced by the metal used as the gate electrode.
    Type of Medium: Electronic Resource
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