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  • 11
    Electronic Resource
    Electronic Resource
    Further work on the calculation of d-orbital energies of cobalt porphyrins from electron spin resonance data (1980)
    s.l. : American Chemical Society
    Inorganic chemistry 19 (1980), S. 1072-1073 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic50206a060
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  • 12
    Electronic Resource
    Electronic Resource
    Growth and ferroelectricity of epitaxial-like BaTiO3 films on single-crystal MgO, SrTiO3, and silicon substrates synthesized by pulsed laser deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6466-6471 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial-like BaTiO3 (BTO) films with good ferroelectricity are obtained both on (001)SrTiO3 (STO) single crystal and on CeO2 buffered silicon substrate by pulsed laser deposition. The deposition parameters need to be stringently controlled in order to grow BTO films with good crystallinity. The BTO films grown on YBa2Cu3O7−x (YBCO)/CeO2/STO substrates are epitaxial, as confirmed by rocking curve, φ scan, and wide-angle x-ray-diffraction techniques. The alignment of a and b axes of BTO films on YBCO/CeO2/Si substrate is, however, not as perfect as BTO film on YBCO/STO substrate. The BTO/YBCO/CeO2/Si films are only (00l) textured. The ferroelectric property measurement, using the YBCO layer as the base electrode material, shows that the remanent polarization Pr and coercive field Ec of the BTO/YBCO/CeO2/Si films (Pr=3.6 μC/cm2, Ec=11.1 kV/cm) are, however, as good as those of the BTO/YBCO/STO films (Pr=4.0 μC/cm2, Ec=12.5 kV/cm). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359121
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  • 13
    Electronic Resource
    Electronic Resource
    Magnetic properties of Er2Fe17−xAlxNy compounds : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6241-6243 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural and magnetic properties of the Er2Fe17−xAlxNy compounds (0≤x≤3) have been investigated. All nitrides and parent compounds crystallize in the Th2Ni17 structure. Al substituted for Fe leads to an increase in lattice constants a and c. Introduction of nitrogen results in a further increase of lattice constants, but the magnitude of this increase is smaller for increasing x. As Al content increases, the Curie temperature of the parent compound increases, whereas the Curie temperature of the nitride decreases. The substitution of Al for Fe results in a decrease of Fe moment in both nitrides and parent compounds. Introduction of nitrogen leads to an increase in the uniaxial anisotropy of the Er sublattice and a spin reorientation. A tentative spin phase diagram has been constructed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355411
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  • 14
    Electronic Resource
    Electronic Resource
    Interdiffusion of multilayer ferroelectric thin films using YBa2Cu3O7−x as an intermediate layer (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7621-7626 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interdiffusion between layers in multilayer ferroelectric thin films was studied from their elemental depth profiles using secondary ion mass spectrometry. Among the films deposited on YBa2Cu3O7−x/CeO2/Si substrates, the interdiffusion is most pronounced for [Sr0.5Ba0.5]Nb2O6 (SBN) films, less marked for Pb0.97La0.03(Zr1−xTix)0.9925O3 (PLZT, x=0.54 or 0.34) films, and is least significant for BaTiO3 films. Higher substrate temperature used for growing SBN films is believed to be the main cause of interdiffusion. The larger proportion of cationic vacancies existing in PLZT films is another possible source inducing interdiffusion. Using YBa2Cu3O7−x/SrTiO3 as substrates substantially reduces the interdiffusion between layers. This is ascribed to the better crystallinity of the YBa2Cu3O7−x layers deposited on SrTiO3 substrates. These results indicate that both the characteristics of ferroelectric films and the underlying YBa2Cu3O7−x layers substantially modify the interdiffusion behavior between the layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362340
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  • 15
    Electronic Resource
    Electronic Resource
    The magnetic properties of R2(Fe1−xSix)17 compounds (R=Dy, Y) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7452-7455 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structures and magnetic properties of R2(Fe1−xSix)17 compounds (R=Dy, Y) were investigated by x-ray phase analysis and magnetic measurements. It is shown that Si substitution for Fe leads to a phase transition at x=0.2, and that the mean iron magnetic moment μFe of R2(Fe1−xSix)17 compounds (R=Dy, Y) decreases as Si concentration x increases; moreover, there is a maximum of dependence Tc(x) at about x=0.16. It is found that the exchange interaction constant AFeFe in R2(Fe1−xSix)17 compounds (R=Dy, Y) increases with x increasing by means of mean-molecular-field analysis of Tc. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357972
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  • 16
    Electronic Resource
    Electronic Resource
    Interfacial chemistry at metal/CdTe contacts as probed by differential scanning calorimetry (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4145-4153 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: All four possible chemical reactivity patterns, namely, outdiffusion of Te (metal-Cd alloy formation), Cd outdiffusion (metal telluride compound formation), comparable chemical reactivity of the metal towards both Cd and Te (no Cd or Te outdiffusion), and chemical inertness of the metal towards CdTe, were differentiated via the differential scanning calorimetry (DSC) technique from a study of the interaction of nine different metals toward CdTe powder. The fusion signatures of free Cd or Te, exotherms due to compound or alloy formation, along with the thermal transitions of the metal telluride and/or the intermetallic were used for this purpose. These reactivity patterns are discussed within the framework of two different thermodynamic models. Both virgin and chemically etched CdTe surfaces were examined, and found to exhibit rather different reactivity trends towards the metal. The ramifications of these results in terms of the electronic properties of metal/CdTe contacts are discussed. Finally, DSC is shown to be useful for probing alterations in the CdTe surface chemistry as a result of the etch treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357365
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  • 17
    Electronic Resource
    Electronic Resource
    Magnetic properties of (Er,R)2Fe17Ny compounds (R=Y,Gd) : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6238-6240 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural and magnetic properties of the interstitial (Er1−xRx)2Fe17Ny compounds with R=Y and Gd, x=0, 0.1, 0.25, 0.4, 0.5, 0.6, 0.75, and 1.0, 2〈y〈3, have been investigated. All the parent compounds crystallize in the Th2Ni17-type structure, except for Gd2Fe17 which crystallizes in the Th2Zn17-structure. All nitrides preserve the same structure as the parents. Introduction of nitrogen results in an increase in lattice constants a and c, and the expansion of unit-cell volume is about 6%. The Curie temperature was found to increase distinctly after nitrogenation. Nitrogen absorption leads to an increase in saturation magnetization, the values of the saturation magnetization increase monotonically with increasing Y or Gd concentration. Nitrogenation increases the uniaxial anisotropy of the Er sublattice, and causes a spin reorientation. The Y and Gd concentration dependencies of the spin reorientation temperature Tsr exhibit maxima. The tentative spin phase diagrams are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355410
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  • 18
    Electronic Resource
    Electronic Resource
    Two-dimensional electron gases in delta-doped GaAs/In0.25Ga0.75As/GaAs heterostructures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2681-2683 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Delta-doped (δ-doped)GaAs/In0.25Ga0.75As/GaAs strained-layer modulation-doped field-effect transistor (δ-SMODFET) structures grown by the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique have been studied for the first time. The δ-doped GaAs, adopted as the electron supplier, was obtained by a stop-growth process so that a very thin and heavily doped layer (1.9×1013 cm−2) can be realized. Experimental results show that a structure with an 80 A(ring) In0.25Ga0.75As layer as the active channel and an 80 A(ring) spacer layer demonstrated the highest two-dimensional electron gases mobility of 26 800 cm2/V s. This structure is easy to achieve by the LP-MOCVD method because the growth of AlGaAs is avoided and is promising for high performance FETs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104806
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  • 19
    Electronic Resource
    Electronic Resource
    Observation of small interfacial strains in YBa2Cu3Ox sub-micron-thick films grown on SrTiO3 substrates (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2966-2968 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed x-ray intensity oscillation fringes around low index Bragg reflections in a YBa2Cu3Ox (YBCO) thin film. By employing a combination of crystal truncation rod interference fringe measurements and x-ray reflectivity using synchrotron radiation, we have been able to probe the structures of highly oriented [001] YBCO grown on [001] SrTiO3 substrates. The results demonstrate the presence of a thin disordered surface layer, the excellent coherence between the YBCO surface and the film-substrate interface, the presence of a small (3.2×10−4) interfacial strain existing in the YBCO film. This strain exists close to the film-substrate interface and extends approximately 300 Å into the micron-thick film. Our results demonstrate that high quality detailed information can be obtained, nondestructively, from thin film superconductors of thicknesses typically used for microwave and other applications. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121509
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  • 20
    Electronic Resource
    Electronic Resource
    Frequency doubling in two-component self-assembled chromophoric waveguide structures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1941-1943 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled chromophoric multilayers having large second-order optical nonlinearities can be combined with linear guiding materials such as polymethylmethacrylate to produce two-component frequency doubling waveguides. This approach introduces considerable flexibility in optimizing the trade-off between the overlap of waveguide mode profiles and linear absorption. Extremely low waveguide propagation losses can be achieved because electric field poling and the accompanying poling-induced optical scattering are obviated. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118786
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