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  • 1
    Electronic Resource
    Electronic Resource
    A Rapid and Small-Scale Method for Estimating Antioxidative Potency of Peanut Sprouts (2002)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 67 (2002), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: A method for estimating antioxidative potency (AOP) was achieved by incubating emulsified linoleic acid in a 1 mL iron/ascorbate system at 37 °C for 30 min followed by absorbance measurement at 234 nm to determine the conjugated diene hydroperoxide (CDHP) content. By that method, 100% AOP was obtained when 10 ppm butylated hydroxytoluene or 50 ppm α-tocopherol was introduced. When freeze-dried peanut sprouts were cooked with ground pork-fat patties and the separated oils were stored at 60 °C for CDHP determination, the highest AOP was observed in the 144 h germinated sprout roots. After extracting the sprout roots with methanol and AOP evaluation by the iron/ascorbate and pork-oil storage methods, both showed similar AOP trends as affected by extract concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.2002.tb08785.x
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  • 2
    Electronic Resource
    Electronic Resource
    Secondary-ion mass spectrometry analysis in pseudomorphic GaAs/InGaAs/GaAs heterostructures utilizing a δ-doping superlattice (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 608-610 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Significant improvement on two-dimensional electron gas (2DEG) concentration and mobility in a δ-doping superlattice GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructures prepared by low-pressure metalorganic chemical vapor deposition have been demonstrated and discussed. The secondary-ion mass spectrometry profiles of these δ-doping superlattice structures were studied. The triple and double δ-doping superlattice heterostructures showed extremely high 2DEG concentrations of 8.8 (6.0) and 4.3 (2.5)×1012 cm−2 along with enhanced mobilities of 2710 (6500) and 3916 (18400) cm2/V s at 300 (77) K, respectively. The 2DEG concentrations, to our knowledge, are among the highest for previously reported pseudomorphic heterostructures with similar mobilities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355847
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  • 3
    Electronic Resource
    Electronic Resource
    Variation of the mobility and the two-dimensional electron gas concentration with indium composition in δ-doped GaAs/InxGa1−xAs/GaAs pseudomorphic structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4332-4335 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron mobility and the two-dimensional electron gas (2DEG) concentration in different indium compositions (0.1〈x〈0.6) δ-doped GaAs/InxGa1−xAs/GaAs pseudomorphic structures grown by low-pressure metalorganic chemical vapor deposition are studied. The electron mobilities of a δ-doped GaAs layer are comparable to those of previous reports. Furthermore, the maximum mobility (5500 and 33 000 cm2/V s at 300 and 77 K, respectively) of the proposed pseudomorphic structure appears at x=0.37. Taking into account of strain and quantum effects, the variation trends of calculated 2DEG concentrations are in good agreement with the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349113
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  • 4
    Electronic Resource
    Electronic Resource
    Capture-emission process in double Poole–Frenkel well traps: Theory and experiments (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1042-1045 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The field-dependent capture-emission process has been studied for double Poole–Frenkel well traps compared with that of single Poole–Frenkel well trap. The emission rate increases with increasing field strength for a single trap. However, for a double trap, it increases to a maximum then decreases with further increasing field due to the barrier lowering and interstate interactions between these two wells. Experimental capacitance deep-level transient spectroscopic data of GaAs samples grown by molecular-beam epitaxy show that when there is a delay in the capacitance transient then there always appear two levels, namely, 0.4 and 0.5 eV. In addition, for both levels, the emission rate increases first to a maximum and then decreases with increasing electric field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337395
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  • 5
    Electronic Resource
    Electronic Resource
    Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3551-3553 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An In0.5(Al0.66Ga0.34)0.5P/GaAs heterostructure field-effect transistor has been fabricated by metal-organic chemical vapor deposition. A turn-on voltage as high as 3.2 V along with an extremely low gate reverse leakage current of 69 μA/mm at VGD=−40 V are achieved. In addition, it is found that the device can be operated with gate voltage up to 1.5 V without significant drain current compression. These characteristics are attributed to the use of high Schottky barrier height, high band gap of In0.5(Al0.66Ga0.34)0.5P Schottky layer, and to the large conduction-band discontinuity at the In0.5(Al0.66Ga0.34)0.5P/GaAs heterojunction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125385
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  • 6
    Electronic Resource
    Electronic Resource
    In0.34Al0.66As0.85Sb0.15/δ(n+)-InP heterostructure field-effect transistors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3124-3126 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A lattice-matched δ-doped In0.34Al0.66As0.85Sb0.15/InP heterostructure field-effect transistor (HFET) which provides large band gap (∼1.8 eV), high Schottky barrier height (φB〉0.73 eV), and large conduction-band discontinuity (ΔEc〉0.7 eV) has been proposed. In0.34Al0.66As0.85Sb0.15/InP heterostructures are shown to be type II heterojunctions with the staggered band lineup. This HFET demonstrates a output conductance of less than 1 mS/mm. Two-terminal gate-source breakdown voltage is more than 20 V with a leakage current as low as 170 μA at room temperature. High three-terminal off-state breakdown voltage as high as 36 V, and three-terminal on-state breakdown voltage as high as 18.6 V are achieved. The gate voltage swing is also significantly improved. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126544
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  • 7
    Electronic Resource
    Electronic Resource
    High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1616-1618 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor has been successfully fabricated by metalorganic chemical-vapor deposition. Improved electron mobility as high as 5410 (19 200) cm2/V s at 300 (77) K along with turn-on voltage as high as 2.3 V and reverse gate-to-drain voltage up to 75 V are achieved. These characteristics are attributed to the use of the δ-doped, undoped InGaP Schottky layer, and undoped GaAs setback layer. Moreover, the parasitic parallel conduction can be eliminated. The activation energy is also deduced. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124772
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  • 8
    Electronic Resource
    Electronic Resource
    Characteristics of graded-like multiple-delta-doped GaAs field effect transistors (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2505-2506 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiple-δ-doped GaAs field effect transistors using graded-like δ-doping profile are demonstrated and investigated. An extremely high carrier density of 1.2×1013 (7.9×1012) cm−2 along with an enhanced Hall mobility of 1700 (3300) cm2/v s at 300 (77) K for a triple-δ-doped GaAs structure are achieved. The dc characteristic reveals an extrinsic transconductance as high as 110 mS/mm at room temperature with a gate length of 2 μm. Three separated peaks in the transconductance versus gate bias curve are observed. Meanwhile, a broad and flat transconductance region is obtained. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113148
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  • 9
    Electronic Resource
    Electronic Resource
    Two-dimensional electron gases in delta-doped GaAs/In0.25Ga0.75As/GaAs heterostructures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2681-2683 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Delta-doped (δ-doped)GaAs/In0.25Ga0.75As/GaAs strained-layer modulation-doped field-effect transistor (δ-SMODFET) structures grown by the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique have been studied for the first time. The δ-doped GaAs, adopted as the electron supplier, was obtained by a stop-growth process so that a very thin and heavily doped layer (1.9×1013 cm−2) can be realized. Experimental results show that a structure with an 80 A(ring) In0.25Ga0.75As layer as the active channel and an 80 A(ring) spacer layer demonstrated the highest two-dimensional electron gases mobility of 26 800 cm2/V s. This structure is easy to achieve by the LP-MOCVD method because the growth of AlGaAs is avoided and is promising for high performance FETs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104806
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  • 10
    Electronic Resource
    Electronic Resource
    Characteristics of a δ -doped GaAs/InGaAs p-channel heterostructure field-effect transistor (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2864-2866 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A δ-doped GaAs/In0.2Ga0.8As p-channel heterostructure field-effect transistor grown by low-pressure metalorganic chemical vapor deposition is demonstrated. The mobilities and two-dimensional hole gas concentrations at 300 (77) K are 260 (2600) cm2/v s and 1012 (5.5×1011) cm−2, respectively. For a gate length of 1.5 μm, the maximum extrinsic transconductances are 15 mS/mm at 300 K and 24 mS/mm at 77 K. The high transconductances extend a wide range versus gate voltage. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113455
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