ZIB

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

In0.34Al0.66As0.85Sb0.15/δ(n+)-InP heterostructure field-effect transistors (2000)

Lin, Y. S. ; Hsu, W. C. ; Yeh, C. Y.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 76 (2000), S. 3124-3126

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A lattice-matched δ-doped In0.34Al0.66As0.85Sb0.15/InP heterostructure field-effect transistor (HFET) which provides large band gap (∼1.8 eV), high Schottky barrier height (φB〉0.73 eV), and large conduction-band discontinuity (ΔEc〉0.7 eV) has been proposed. In0.34Al0.66As0.85Sb0.15/InP heterostructures are shown to be type II heterojunctions with the staggered band lineup. This HFET demonstrates a output conductance of less than 1 mS/mm. Two-terminal gate-source breakdown voltage is more than 20 V with a leakage current as low as 170 μA at room temperature. High three-terminal off-state breakdown voltage as high as 36 V, and three-terminal on-state breakdown voltage as high as 18.6 V are achieved. The gate voltage swing is also significantly improved. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.126544

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit