ZIB

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer (1999)

Lin, Y. S. ; Hsu, W. C. ; Yang, C. S.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 75 (1999), S. 3551-3553

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: An In0.5(Al0.66Ga0.34)0.5P/GaAs heterostructure field-effect transistor has been fabricated by metal-organic chemical vapor deposition. A turn-on voltage as high as 3.2 V along with an extremely low gate reverse leakage current of 69 μA/mm at VGD=−40 V are achieved. In addition, it is found that the device can be operated with gate voltage up to 1.5 V without significant drain current compression. These characteristics are attributed to the use of high Schottky barrier height, high band gap of In0.5(Al0.66Ga0.34)0.5P Schottky layer, and to the large conduction-band discontinuity at the In0.5(Al0.66Ga0.34)0.5P/GaAs heterojunction. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.125385

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit