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  • Articles: DFG German National Licenses  (16)
Source
  • Articles: DFG German National Licenses  (16)
Material
Years
  • 1
    Electronic Resource
    Electronic Resource
    Majority and minority electron and hole mobilities in heavily doped GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7102-7110 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The majority electron and minority hole mobilities have been calculated in GaAs for donor densities between 5×1016 and 1×1019 cm−3. Similarly, the majority hole and minority electron mobilities have been calculated for acceptor densities between 5×1016 and 1×1020 cm−3. All the important scattering mechanisms have been included. The ionized impurity and carrier–carrier scattering processes have been treated with a phase-shift analysis. These calculations are the first to use a phase-shift analysis for minority carriers scattering from majority carriers. The results are in good agreement with experiment, but predict that at high dopant densities minority mobilities should increase with increasing dopant density for a short range of densities. This effect occurs because of the reduction of plasmon scattering and the removal of carriers from carrier–carrier scattering because of the Pauli exclusion principle. Some recent experiments support this finding. These calculations do not treat the density-of-states modifications due to heavy doping, which should have only a small effect on the mobility at room temperature. The results are important for device modeling because of the need to have values for minority mobilities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347650
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Persistent photoconductivity in SIMOX film structures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3456-3460 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoinduced transient spectroscopy (PITS) was used to measure the persistent photoconductive (PPC) response in n-type separation by implanted oxygen (SIMOX) film resistors. A broadband, single-shot, flashlamp-pumped dye laser pulse was used to photoexcite interband electrons in the film, and the excess carrier population decay was measured at temperatures in the 60–220-K range. The PPC signals exhibit nonexponential character and the conductivity transients are recorded as a function of temperature for variable periods up to 30 s. The photoconductive data are analyzed by using the Queisser and Theodorou potential barrier model, and a logarithmic time-decay dependence is confirmed for the first time in SIMOX material. The hole-trap density at the conductive-film–buried-silica interface is calculated to be in the high 1015 cm−3 to low 1016 cm−3 range. The sensitivity of PITS is demonstrated to be appropriate for characterization of the SIMOX interface structure and for material qualification.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346356
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  • 3
    Electronic Resource
    Electronic Resource
    Testing the accuracy of calculated equilibrium carrier concentrations in the presence of surface fields (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 236-242 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simple analytic expressions for the one-dimensional, majority-carrier concentration in a uniformly doped, semi-infinite semiconductor with a charge-accumulated front surface are derived. These expressions are based on the assumption that the effective intrinsic carrier concentration depends only upon the concentration of the majority dopant. Within the framework of this assumption, the expressions derived here are rigorously accurate for intrinsic material, and are accurate to well within 100 parts per million (ppm) for doping concentrations above 1012 cm−3. The results of calculations of the majority-carrier concentration carried out using these expressions and using a widely available one-dimensional semiconductor device modeling program are compared to illustrate how these expressions are used for testing the accuracy of iterative solutions of the drift-diffusion equations in the presence of surface fields.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350317
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  • 4
    Electronic Resource
    Electronic Resource
    Calculated majority- and minority-carrier mobilities in heavily doped silicon and comparisons with experiment (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2285-2296 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: As silicon devices approach 0.1 μm in size, it will be essential to have accurate values of the majority and minority mobilities of electrons and holes. These mobilities have been calculated in silicon for donor and acceptor densities between 1017 and 1020 cm−3. All the important scattering mechanisms have been included. The ionized impurity scattering has been treated with a quantum-mechanical phase-shift analysis. The results are in good agreement with experiment, but predict that the change of minority electron mobility with increasing dopant density should decrease slightly at high dopant densities for a small range of densities. This effect occurs mainly because of the reduction of plasmon scattering. Some recent experiments support these findings. In addition, the ionized impurity scattering rates calculated from the quantum-mechanical phase shifts and those rates calculated from the Born approximation are shown to differ by more than factors of 3. The Born approximation is not valid for low-energy carriers near band extrema. Carrier scattering rates are key input quantities for Monte Carlo calculations of carrier-velocity versus electric-field relations and of simulations of device behavior. Our calculations do not treat the density-of-states modifications due to heavy doping, which should have only a small effect on the mobility at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351128
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  • 5
    Electronic Resource
    Electronic Resource
    Model for determining the density and mobility of carriers in thin semiconducting layers with only two contacts (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1008-1012 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method for determining the carrier densities and mobilities in a thin semiconducting layer was recently described. It is based on fitting the transverse magnetoresistance of the layers as a function of magnetic field, and it requires only two contacts. To improve the accuracy and generalize the procedure to multicarrier systems, a computer code was written to solve for the magnetoresistance as a function of magnetic field and the length-to-width ratio of a rectangular sample. A nonlinear-least-squares fit was made to the results of the computer model for a single-carrier system. The results for multicarrier systems are discussed. This method is especially useful as a monitor for improving the quality control of the electrical characteristics of thin conducting layers in finished devices. The code is also useful for interpreting standard four-terminal measurements as well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360770
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of doping-density gradients on band-gap narrowing in silicon and GaAs devices (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4823-4827 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The limitations of the theory for band-gap narrowing, which is based on uniform material, are considered in devices that have steep doping gradients. Validity criteria are derived that place upper bounds on the dopant and carrier density gradients for the application of the results from uniform theory. The existence of wave-function tailing beyond the potential barriers that occur in devices is studied. At room temperature the effects due to these tails are usually small, but at low temperatures they can become very significant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343215
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Lattice relaxation in silicon doped with 4d and 5d transition metals (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4538-4543 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoionization cross-section spectra from deep centers in silicon doped with technologically important 4d and 5d transition elements were analyzed by the Ridley and Amato lattice coupling model to determine threshold energy and lattice relaxation parameters corresponding to optically induced transitions involving either band. The average optic phonon energy is 50 meV. Electron transitions to the conduction band from the silver, platinum, and gold acceptor centers have, respectively, threshold energies (in meV) ET0 =550,226, and 570. For silver and gold, the Huang–Rhys parameter S could not be determined because of a mixture of both allowed and forbidden transitions; for platinum, S=0.3. Hole transitions from the valence band to the same centers have, respectively, ET0 =580, 905, 590, and S=1.3, 0.5, 0.8. Hole transitions from the valence band to the donor centers of these elements are, respectively, ET0 =340, 320, 335 and S=1.2, 1.4, 0.4. ET0, and S values are uncertain to within ±5 meV and ±0.05, respectively. Electron transition data from the donor centers of these elements to the conduction band are not available or insufficient to allow analysis of the threshold region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341283
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Valence-band effective masses of GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 447-450 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The density-of-states effective masses for the heavy-hole, light-hole, and split-off valence bands of GaAs have been calculated as a function of energy for each band. The calculations are based on a full k⋅p theory with the most recent values used for the matrix elements. Provision has been made for the effect of the split-off energy on the matrix elements of the split-off band. The results show important nonparabolicities which should be taken into account in modeling the valence band, and rational polynomial fits have been made for ease of computation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341217
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Application of multiscattering theory to impurity bands in Si:As (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4544-4548 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Impurity bands in arsenic-doped silicon have been calculated for doping densities of 3.3×1017, 1.2×1018, and 8.0×1018 cm−3. A multiscattering approach is used with a model potential which provides both electronic screening and the proper bound-state energy for the isolated center. The results are in good agreement with previous calculations based on electron hopping among hydrogenic centers. An advantage of the multiscattering approach is that it treats the conduction-band states as well and shows the loss of these states to the formation of the impurity band. This is a new result and affects the density for the Mott transition. Calculations are also performed for the states associated with the binding of an extra electron to unionized arsenic centers, the so-called D− band. The overall results are in good agreement with the observed Mott transition in Si:As near 8×1018 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341255
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  • 10
    Electronic Resource
    Electronic Resource
    Photoionization cross-section studies of the platinum-donor center in silicon (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2626-2632 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relative photoionization cross section of the platinum donor center in silicon was measured over the wavelength range of 2.4 to 3.9 μm by electrical deep-level optical spectroscopy on an n+p junction at 80 K. The data were analyzed in terms of the lattice-coupling model proposed by Ridley and Amato which was modified for valence-band nonparabolicity. Good agreement was obtained between the experimental results and the model calculations of the cross section with the energy level of the donor at 0.320±0.005 eV above the valence-band edge and a Huang–Rhys factor S of approximately 1.4. This S value corresponds to a Franck–Condon energy shift of 70 meV with a phonon energy of 50 meV. Previously reported photoionization data of the gold donor were also fit by the same model, yielding S(approximately-equal-to)0.4, a surprisingly small value. Estimates were made of the majority-carrier capture cross section for these two levels and for the platinum acceptor center in silicon, which was measured previously. These estimates, based on Ridley's quantum-defect model and our measured S values, are several orders of magnitude smaller than the corresponding measured values, indicative of the complex nature of these 5d-transition elements in silicon. More detailed models, perhaps including anharmonicity of the defect vibrations, are required to understand these large capture cross sections.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337892
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