Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Model for determining the density and mobility of carriers in thin semiconducting layers with only two contacts (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1008-1012 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method for determining the carrier densities and mobilities in a thin semiconducting layer was recently described. It is based on fitting the transverse magnetoresistance of the layers as a function of magnetic field, and it requires only two contacts. To improve the accuracy and generalize the procedure to multicarrier systems, a computer code was written to solve for the magnetoresistance as a function of magnetic field and the length-to-width ratio of a rectangular sample. A nonlinear-least-squares fit was made to the results of the computer model for a single-carrier system. The results for multicarrier systems are discussed. This method is especially useful as a monitor for improving the quality control of the electrical characteristics of thin conducting layers in finished devices. The code is also useful for interpreting standard four-terminal measurements as well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360770
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    The effect of electron-hole plasmas on the density of states of silicon and GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4279-4283 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The densities of states of the conduction and valence bands of silicon and GaAs have been calculated at 300 K for the case of an electron-hole plasma, which can occur at high-injection levels in bipolar devices or in bulk material under intense optical excitation. The results show considerable narrowing of the band gap, which needs to be included in the analysis of device measurements or the interpretation of photoluminescence data. Furthermore, the band-gap narrowing that results from dopant ions is reduced by excess carriers because of the reduced free-carrier screening radius.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343971
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Methods for accurate determination of emission rate and trap concentration with application to platinum-doped silicon (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 534-540 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A procedure for the analysis of junction capacitance was developed which allows one to extract accurate values of emission rate and trap concentration from isothermal transient capacitance measurements. Experiments to demonstrate the procedure were performed on silicon diodes doped with platinum. The capacitance-ratio method of determining the emission rate was used to remove the nonexponentiality due to large trap concentration from the capacitance transients. Arrhenius plots of scaled emission rate gave activation energies of EC−EA=0.2271±0.0002 eV for the platinum acceptor level in n-type silicon and EA−Ev=0.3215±0.0012 eV for the platinum donor level in p-type silicon. A new method for determining the trap concentration is derived and verified by use of simulations and data. This method involves the subtraction of capacitance values obtained from two transients with the same fill voltage, but different reverse voltages. It is much simpler than methods which require iterative solutions of Poisson's equation and a priori knowledge of the trap energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339779
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Photoionization cross-section studies of the platinum-donor center in silicon (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2626-2632 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relative photoionization cross section of the platinum donor center in silicon was measured over the wavelength range of 2.4 to 3.9 μm by electrical deep-level optical spectroscopy on an n+p junction at 80 K. The data were analyzed in terms of the lattice-coupling model proposed by Ridley and Amato which was modified for valence-band nonparabolicity. Good agreement was obtained between the experimental results and the model calculations of the cross section with the energy level of the donor at 0.320±0.005 eV above the valence-band edge and a Huang–Rhys factor S of approximately 1.4. This S value corresponds to a Franck–Condon energy shift of 70 meV with a phonon energy of 50 meV. Previously reported photoionization data of the gold donor were also fit by the same model, yielding S(approximately-equal-to)0.4, a surprisingly small value. Estimates were made of the majority-carrier capture cross section for these two levels and for the platinum acceptor center in silicon, which was measured previously. These estimates, based on Ridley's quantum-defect model and our measured S values, are several orders of magnitude smaller than the corresponding measured values, indicative of the complex nature of these 5d-transition elements in silicon. More detailed models, perhaps including anharmonicity of the defect vibrations, are required to understand these large capture cross sections.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337892
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Impurity bands and band tailing in n-type GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2854-2859 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The density of states of the valence and conduction bands of n-type GaAs has been calculated for a donor density of 1017 cm−3 at 300 and 20 K. Both the donor-carrier and carrier-carrier interactions have been included. Band tails appear on both bands and the energy gap is narrowed. Calculations were also performed for a donor density of 1015 cm−3 at 300 and 20 K. These results show the formation of an impurity band at 20 K, whereas a band tail exists at 300 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337069
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Effects of doping-density gradients on band-gap narrowing in silicon and GaAs devices (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4823-4827 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The limitations of the theory for band-gap narrowing, which is based on uniform material, are considered in devices that have steep doping gradients. Validity criteria are derived that place upper bounds on the dopant and carrier density gradients for the application of the results from uniform theory. The existence of wave-function tailing beyond the potential barriers that occur in devices is studied. At room temperature the effects due to these tails are usually small, but at low temperatures they can become very significant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343215
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Application of multiscattering theory to impurity bands in Si:As (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4544-4548 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Impurity bands in arsenic-doped silicon have been calculated for doping densities of 3.3×1017, 1.2×1018, and 8.0×1018 cm−3. A multiscattering approach is used with a model potential which provides both electronic screening and the proper bound-state energy for the isolated center. The results are in good agreement with previous calculations based on electron hopping among hydrogenic centers. An advantage of the multiscattering approach is that it treats the conduction-band states as well and shows the loss of these states to the formation of the impurity band. This is a new result and affects the density for the Mott transition. Calculations are also performed for the states associated with the binding of an extra electron to unionized arsenic centers, the so-called D− band. The overall results are in good agreement with the observed Mott transition in Si:As near 8×1018 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341255
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Lattice relaxation in silicon doped with 4d and 5d transition metals (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4538-4543 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoionization cross-section spectra from deep centers in silicon doped with technologically important 4d and 5d transition elements were analyzed by the Ridley and Amato lattice coupling model to determine threshold energy and lattice relaxation parameters corresponding to optically induced transitions involving either band. The average optic phonon energy is 50 meV. Electron transitions to the conduction band from the silver, platinum, and gold acceptor centers have, respectively, threshold energies (in meV) ET0 =550,226, and 570. For silver and gold, the Huang–Rhys parameter S could not be determined because of a mixture of both allowed and forbidden transitions; for platinum, S=0.3. Hole transitions from the valence band to the same centers have, respectively, ET0 =580, 905, 590, and S=1.3, 0.5, 0.8. Hole transitions from the valence band to the donor centers of these elements are, respectively, ET0 =340, 320, 335 and S=1.2, 1.4, 0.4. ET0, and S values are uncertain to within ±5 meV and ±0.05, respectively. Electron transition data from the donor centers of these elements to the conduction band are not available or insufficient to allow analysis of the threshold region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341283
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Valence-band effective masses of GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 447-450 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The density-of-states effective masses for the heavy-hole, light-hole, and split-off valence bands of GaAs have been calculated as a function of energy for each band. The calculations are based on a full k⋅p theory with the most recent values used for the matrix elements. Provision has been made for the effect of the split-off energy on the matrix elements of the split-off band. The results show important nonparabolicities which should be taken into account in modeling the valence band, and rational polynomial fits have been made for ease of computation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341217
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Models for heavy doping effects in gallium arsenide (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 521-527 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Klauder's self-energy method is used in a self-consistent calculation of the effects due to the interactions between carriers and dopant ions in GaAs at 300 K. The many-body effects due to the interactions among the carriers themselves, exchange, and correlation, are estimated by evaluating expressions similar to those of Abram et al. at 300 K. When densities exceed about 5×1016 cm−3 in n-type GaAs and 1018 cm−3 in p-type GaAs, carrier-dopant ion interactions and carrier-carrier interactions become significant and should be included in calculations of band structure changes and of properties which depend on the density of states such as carrier transport, effective intrinsic carrier concentrations, and coefficients for optical absorption.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339777
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...