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  • Articles: DFG German National Licenses  (13)
Source
  • Articles: DFG German National Licenses  (13)
Material
Years
  • 1
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy growth and characterization of CdxHg1−xTe (0.4〈x〈1) based quantum wells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1774-1781 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdxHg1−xTe epilayers and CdxHg1−xTe/CdyHg1−yTe quantum well heterostructures have been grown by molecular beam epitaxy. The various parameters of the growth technique have been carefully optimized: control of the thickness by the observation of the oscillations of the reflection-high-energy electron diffraction, the alloy composition by measuring the Cd sticking coefficient in our growth procedure, and the quality of the interfaces by performing transmission electron microscopy. The photoluminescence spectra at 5 K of thick CdxHg1−xTe epilayers are dominated by bound exciton recombination below the fundamental band gap Eg. By contrast, the main emission in the quantum wells photoluminescence spectra is due to an intrinsic recombination of the confined carriers in their respective ground state. The influence of CdxHg1−xTe well thickness and the CdyHg1−yTe barrier composition of this quantum well transition energy are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351213
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  • 2
    Electronic Resource
    Electronic Resource
    Optical gain and laser emission in HgCdTe heterostructures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6908-6915 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed study of stimulated emission mechanisms as well as laser emission capability has been carried out on Hg1−xCdxTe (0.44〈x〈0.5) separate-confinement heterostructures grown by molecular beam epitaxy. At low temperature, spontaneous photoluminescence (PL) occurs on extrinsic levels below the gap whereas optical gain exhibits a maximum of stimulated emission shifted towards higher energy, close to the gap. As temperature increases, spontaneous PL is shifted from the extrinsic states to the band-to-band transition by a thermally activated detrapping of the carriers. Above 100 K, spontaneous and stimulated emission vary in a similar way with temperature. Laser emission has been observed up to room temperature for all the heterostructures. The use of quantum wells in the active layer and graded index in the barriers has allowed a significant reduction of the excitation density threshold, as compared to a single separate-confinement heterostructure (SCH) of same composition. However, the high-temperature characteristic temperature T0 is found to be similar in the two structures. A SCH with a higher energy gap exhibits a more favorable behavior with temperature. These experimental results have been compared to theoretical models. The experimentally observed T0 can be well simulated by taking into account the Auger effect. From the experimental data, the Auger constant has been determined for each heterostructure. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360457
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  • 3
    Electronic Resource
    Electronic Resource
    Luminescence characterization of CdTe:In grown by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2651-2653 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the incorporation of indium as a shallow donor in CdTe by molecular beam epitaxy. Using proper surface stoichiometry conditions, we demonstrate that it is possible to incorporate and activate up to 1018 cm−3 indium impurities. The doped layers have been characterized by secondary-ion mass spectroscopy, capacitance-voltage and Hall-effect measurements. Photoluminescence (PL) and resonant excitation of the PL clearly identify indium as the chemical dopant, acting as an effective mass donor with an energy of 14 meV. Incorrect stoichiometry conditions lead to a poor dopant activity and to complex centers formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104797
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  • 4
    Electronic Resource
    Electronic Resource
    Photopumped infrared vertical-cavity surface-emitting laser (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2480-2482 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The feasibility of a photopumped infrared vertical-cavity surface-emitting laser (VCSEL) based on CdHgTe alloys is demonstrated. The structure of the VCSEL consists of a 16.5-period Cd0.4Hg0.6Te/Cd0.75Hg0.25Te bottom Bragg reflector and a 3λ/4 thick Cd0.75Hg0.25Te cavity, containing a 100-nm-thick well, grown by molecular beam epitaxy. The top mirror is a 7-period YF3/ZnS dielectric stack. The cavity quality factor is Q=350. This heterostructure VCSEL operates at 3.06 μm with a measured power density threshold of 45 kW/cm2 at 10 K. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115827
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  • 5
    Electronic Resource
    Electronic Resource
    "New donors'' in silicon: An interface effect due to internal oxidation (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3192-3195 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The analysis of Czochralski-silicon annealed in the range 500–800 °C is performed using infrared transmission, electron paramagnetic resonance and admittance spectroscopy measurements. It is shown that the experimental data and especially, new original data obtained with the pulsed admittance spectroscopy technique are consistent with a new model. The "new donors'' effect would in fact be the result of the inversion layer around silica precipitates. This model is demonstrated taking in account the known properties of the Si/SiO2 interface (between precipitates and the silicon crystal). The electrical conduction is shown to be a percolation process through an inhomogeneously conducting material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337735
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  • 6
    Electronic Resource
    Electronic Resource
    3.2 μm infrared resonant cavity light emitting diode (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2591-2593 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A CdHgTe resonant cavity light emitting diode is proposed as a new infrared emitter. The device consists of a bottom Bragg reflector of 86% reflectivity, a half-wavelength cavity, n doped at the beginning (1018 cm−3) and p doped at the end (1018 cm−3), containing an active layer at the antinode position, and a top gold mirror of 95% reflectivity which also serves as an Ohmic contact. The emission spectrum shows a narrow peak of 8 meV full width at half-maximum (FWHM) at 300 K, which is much less than the inhomogeneous linewidth of CdHgTe quantum wells (QWs). This electroluminescent peak matches very well the cavity resonance wavelength and FWHM, as given by transmission measurements of the unbiased cavity. The directivity is also improved by the cavity effect. Thus, we have demonstrated that even a relatively low Q microcavity can greatly enhance the characteristics of an infrared emitter in the 2–5 μm range. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115141
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  • 7
    Electronic Resource
    Electronic Resource
    Nonlinear interdiffusion in semiconductor superlattices: Case of CdTe/HgTe (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2548-2550 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experiments have been designed to measure the interdiffusion coefficients in CdTe/HgTe (001) superlattices grown by molecular beam epitaxy. The interdiffusion coefficients are deduced from double-crystal x-ray diffraction on samples annealed in the 200–240 °C range under a Hg saturated pressure. Our results indicate that the interdiffusion is strongly dependent on concentration with a coefficient given by D(CCd,T)=1.0 exp{[−1.45(±0.1) eV]/(kT)} exp {[−0.55 (±0.1) CCd eV]/(kT)} cm2/s. The activation energies ΔEHgTe≈1.45 eV and ΔECdTe≈2.0 eV are consistent with an interdiffusion process by a vacancy mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109292
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  • 8
    Electronic Resource
    Electronic Resource
    Room temperature electro-optic effect in CdHgTe multiple quantum well heterostructures at 1.5 μm (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 856-858 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the room temperature electromodulation properties of CdHgTe heterostructures as a base component for a photorefractive device operating at 1.5 μm. We reach absorption modulation as high as 200%, in the near-gap transparent region of the spectrum, by application of a reverse bias of the order of 100 kV/cm. We observe the transition from the Franz–Keldysh effect in 200 Å wide wells to the quantum confined Stark effect in 90 Å wells. The calculated diffraction efficiency in a suitable photorefractive device would be of the order of 8×10−4 in both cases. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118297
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  • 9
    Electronic Resource
    Electronic Resource
    2.6 μm optically pumped vertical-cavity surface-emitting laser in the CdHgTe system (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3763-3765 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results of a midinfrared vertical-cavity surface-emitting laser operating at 2.63 μm made of CdHgTe alloys. The resonator is constituted of two dielectric YF3/ZnS mirrors deposited after growth and after removal of the substrate. The top mirror reflectivity is increased step by step by deposition of an additional stack period allowing us to study the effect of mirror loss on lasing properties. With a reflectivity of 98.1% lasing is observed up to 190 K. The pulsed threshold power is 1.7 kW/cm2 at 80 K. The characteristic temperature is T0=113 K. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125448
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  • 10
    Electronic Resource
    Electronic Resource
    Room-temperature optically pumped CdHgTe vertical-cavity surface-emitting laser for the 1.5 μm range (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1661-1663 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The demonstration of a room-temperature CdHgTe surface-emitting laser is reported. A planar heterostructure with two high-index contrast dielectric mirrors deposited after growth and after etching off the substrate has been realized. The emission wavelength of 1.57 μm is nearly independent of temperature (dλ/dT=0.02 nm/K) and the multimode linewidth is 10 meV. The pulsed threshold power is as low as 21 mW for a 300 μm spot. Lasing is observed up to 300 K and the peak output power exceeds 700 mW © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124831
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