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Nonlinear interdiffusion in semiconductor superlattices: Case of CdTe/HgTe (1993)

Tardot, A. ; Hamoudi, A. ; Magnea, N. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 62 (1993), S. 2548-2550

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Experiments have been designed to measure the interdiffusion coefficients in CdTe/HgTe (001) superlattices grown by molecular beam epitaxy. The interdiffusion coefficients are deduced from double-crystal x-ray diffraction on samples annealed in the 200–240 °C range under a Hg saturated pressure. Our results indicate that the interdiffusion is strongly dependent on concentration with a coefficient given by D(CCd,T)=1.0 exp{[−1.45(±0.1) eV]/(kT)} exp {[−0.55 (±0.1) CCd eV]/(kT)} cm2/s. The activation energies ΔEHgTe≈1.45 eV and ΔECdTe≈2.0 eV are consistent with an interdiffusion process by a vacancy mechanism.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.109292

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