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  • Articles: DFG German National Licenses  (2)
Source
  • Articles: DFG German National Licenses  (2)
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Years
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 951-957 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A relation for the short-circuit current near a grain boundary perpendicular to the surface of the solar cell is given. In the analysis a point-generation source is assumed. The grain parameters such as the lifetime and the diffusivity of the minority carriers and the effective recombination velocity are determined from the decay curve of the short-circuit current induced by the electron beam. Since the depletion layer capacitance C and the series resistance R in the solar cell are large, the parameter RC is taken into account in the analysis of the short-circuit current.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 22 (1987), S. 2332-2340 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Creep and conductivity were measured for polycrystalline α-Al2O3 doped with titanium or iron plus titanium. Both series of samples show a transition from acceptor domination to donor domination at the point where the concentrations of titanium and acceptors are approximately equal. Parameters in the expression for the creep rate $$\dot \varepsilon $$ ∞S nd-PPr O 2 exp (-QlkT) (whereS is the applied stress,d the grain size,Q an activation energy andn, p, r are constants characterizing the creep mechanism) indicate limitation by bulk diffusion in the acceptor-dominated samples and in the donor-dominated samples at low [Ti]. In the latter samples the ratelimiting species isO ″ i at highP O 2, VA ′″ Al at lowP O 2, with involvement of e′ at mediumP O 2. At higher titanium concentrations the creep rate is limited by generation/recombination of defects at grain boundaries. Iron appears to increase the rate of these grain-boundary reactions. When second-phase particles of Al2TiO5 are present, $$\dot \varepsilon $$ is decreased but ionic conductivity is increased.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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