Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
83 (1998), S. 7730-7735
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The effect of the carrier recombination process in silicon on the microwave reflection coefficient is analyzed in the frequency domain. The process is described using a two level recombination/trapping model. Carrier recombination kinetics are characterized by four parameters, two of which are related to the recombination and the other to the trapping processes. These parameters are evaluated for Czochralski silicon wafers based on Nyquist plots. In the evaluation procedure, a nonlinear simplex method is used for fitting the experimental data to the model. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.367946
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