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  • Electronic Resource  (34)
  • 1990-1994  (12)
  • 1985-1989  (22)
  • 1965-1969
  • 1994  (12)
  • 1988  (22)
  • 1
    Electronic Resource
    Electronic Resource
    Biochemical and Autoradiographic Study of Cerebral Protein Synthesis with [18F]- and [14C]Fluorophenylalanine (1988)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 50 (1988), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Fluorine-18-labeled ortho or para isomers of l-fluorophenylalanine were used in double-label experiments together with l-[3H]phenylalanine for amino acid incorporation into cerebral proteins of Mongolian gerbil brain. It was demonstrated by qualitative regional comparison of the 18F and 3H autoradiographic images that l-p-[18F]fluo-rophenylalanine is incorporated into proteins and exhibits a regional cerebral protein synthesis pattern. To a minor extent, l-p-fluorophenyl[3–14C]alanine and l-o-[18F]fluo-rophenylalanine are hydroxylated in vivo to form labeled tyrosine or tyrosine analogues that are incorporated into cerebral proteins as well. The advantage and validity of the application of l-p-[18F]fluorophenylalanine with positron emission tomography for noninvasive studies of cerebral protein synthesis in humans are evaluated on the basis of an experimental animal approach.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1988.tb03007.x
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  • 2
    Electronic Resource
    Electronic Resource
    Diffusion of both Ga and Bi into InSb seeds during growth of InGaSbBi (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 858-864 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In1−xGaxSb1−yBiy (0〈x≤0.21, 0〈y≤0.005) quaternary bulk single crystals were grown on InSb seed crystals using a rotary Bridgman method. In order to investigate the quality of these crystals, various kinds of measurements were carried out, such as optical microscope, x-ray topograph, four-crystal x-ray diffractometry, electron-probe microanalysis, energy-dispersive spectroscopy, and secondary-ion-mass spectroscopy. All grown crystals were 10 mm in diameter and more than 10 mm in length. This indicates that the rotary Bridgman method was useful to grow quaternary bulk single crystals. Owing to segregation, the compositional ratio of Bi (y) increased and that of Ga (x) decreased as crystals grew. During growth of InGaSbBi, both Ga and Bi diffused into the InSb seed and there appeared domains of InBi. For comparison, InSb1−yBiy (0〈y≤0.05) and In1−xGaxSb (0〈x≤0.16) were grown on InSb. It turned out that Bi did not diffuse into InSb without Ga, but Ga diffused without Bi. The incorporation of Ga produced the excess In and as a result InBi domains were formed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357761
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  • 3
    Electronic Resource
    Electronic Resource
    Properties of Pb-doped Bi-Sr-Ca-Cu-O superconductors (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1329-1331 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A zero resistance transition temperature of 108 K has been achieved for Pb-doped Bi-Sr-Ca-Cu-O superconductors prepared by conventional powder solid-state reaction. The materials contained both the high Tc phase (Bi2Sr2Ca2Cu3Ox) and the low Tc phase (Bi2Sr2Ca1Cu2Ox). Critical current density at 100 K in a zero magnetic field was 3.5 A/cm2 which was larger than that of the Pb-free sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100452
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of group V/III flux ratio on the reliability of GaAs/Al0.3Ga0.7As laser diodes prepared by molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 252-254 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of group V/III flux ratio γ on the reliability of GaAs/Al0.3Ga0.7As double-heterostructure lasers grown by molecular beam epitaxy at 720 °C has been studied. The threshold current does not change with γ. By contrast, the degradation rate strongly depends on γ and it takes a minimum at γ∼3 where the photoluminescence intensity of the Al0.3Ga0.7As cladding layer is maximum. In the case of γ∼3, the degradation rate is lower than that of lasers grown by liquid phase epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99484
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  • 5
    Electronic Resource
    Electronic Resource
    Superconductivity and magnetic properties of high Tc Bi-Sr-Ca-Cu-O superconductors (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2064-2065 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization measurements were performed at 77 K on Bi-Sr-Ca-Cu-O compounds having zero resistance temperatures at 103 and 82 K. The lower critical field Hc1 of the 103 K material was found to be 60% less than the Hc1 of YBa2Cu3O7. This suggests that the material has a higher Hc2 . The new compound also has less magnetization hysteresis than the YBa2Cu3O7 compound.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99748
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  • 6
    Electronic Resource
    Electronic Resource
    Near-ideal low threshold behavior in (111) oriented GaAs/AlGaAs quantum well lasers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 339-341 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fundamental characteristics of (111) oriented GaAs/AlGaAs graded-index separate-confinement-heterostructure single quantum well lasers have been compared with conventional (100) oriented lasers. In particular, the threshold current density Jth of (111) oriented lasers does not change with the well width Lz in the range of Lz=30–100 A(ring), which corresponds to an ideal extreme. The lowest Jth of 145 A/cm2 together with a high characteristic temperature T0 of 186 K in the threshold-temperature dependence has been achieved for an Lz of 40 A(ring) and a cavity length of 490 μm. The dependence of T0 on Lz showed that T0 is maximum at Lz∼60 A(ring) for both (111) and (100) oriented lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99457
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  • 7
    Electronic Resource
    Electronic Resource
    Polarization-dependent gain-current relationship in (111)-oriented GaAs/AlGaAs quantum-well lasers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 297-302 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed measurements of polarization-dependent gain-current characteristics have been carried out on (111)- and (100)-oriented GaAs/AlGaAs single-quantum-well lasers by using Hakki and Paoli's method. Polarization-dependent gain-current characteristics have been found to strongly depend on the well width and the quantization direction. The saturation of gain with the injection current and the width of the gain spectrum depends on the well width, and they are also affected by the transition between the higher-order subbands. Experimental results of polarization-dependent spontaneous emission are also presented. The simple selection rule and the effective-mass theories do not quantitatively account for the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341426
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  • 8
    Electronic Resource
    Electronic Resource
    Iron nitride thin films prepared by facing targets sputtering (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3230-3232 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The iron nitride thin films have been deposited using a facing targets sputtering (FTS) system and a conventional dc diode magnetron sputtering system, and their crystallographic characteristics and magnetic properties have been investigated. The total gas pressure (PN2+PAr) was set at 2 mTorr. The films deposited by the FTS system without heating the substrate at PN2 below 0.3 mTorr possessed α-Fe-like structure with an increased lattice constant. At PN2 of around 0.5 mTorr, a two-phase mixture of α-Fe and Fe2–3N was formed in the films prepared in the FTS system, while ζ-Fe2N phase was formed in the films prepared by dc magnetron sputtering. The films prepared by FTS at PN2 of 0.1 mTorr possessed α-Fe and γ'-Fe4N structures when a substrate temperature (Ts) was in the range from 80 to 300 °C. The films deposited at Ts of about 150 °C possessed a saturation magnetization (Ms) of about 1700 emu/cm3, which is larger than that of pure iron films and coercivity (Hc) of about 1.5 Oe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340851
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  • 9
    Electronic Resource
    Electronic Resource
    The strategic dual image method: An extremely simple procedure for open field problems (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3366-3368 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Previously we proposed a new method which is based on the strategic dual image forcing an open boundary to close for the finite element solution of open boundary problems. In this paper the relationship between the strategic dual image and traditional electric image methods is clarified. This leads to a method of determining a hypothetical boundary for our strategic dual image method. Several examples demonstrate the versatility of our new method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340784
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  • 10
    Electronic Resource
    Electronic Resource
    Computer simulation model of the effects of interface states on high-performance amorphous silicon solar cells (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 550-560 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A computer simulation model of amorphous silicon solar cells using a Scharfetter and Gummel solution of Poisson's equation and Taylor and Simmons occupancy statistics for the dangling bond gap states (D states), has been developed. With a suitable choice of parameters, the numerical results for solar cell collection efficiency and dark and illuminated I-V characteristics agree well with experimental values. The model has been used specifically to study the influence of interface states at the TCO-p (transparent conductive oxide), p-i, i-n, and n-metal interfaces and to explain the beneficial role of a graded-band-gap layer at the p-i interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340085
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