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  • Electronic Resource  (4)
  • 1995-1999  (4)
  • 1955-1959
  • 1995  (4)
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  • Electronic Resource  (4)
Years
  • 1995-1999  (4)
  • 1955-1959
Year
  • 1
    Electronic Resource
    Electronic Resource
    Interpretation of sputter depth profiles by mixing simulations (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 307-310 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The interpretation of sputter depth profiles can be simplified by use of computer simulations. Distortions caused by mixing effects and distortions caused by the information depth of the analytical method have to be distinguished. Atomic mixing and the information depth distort the depth profile simultaneously. Therefore, it is necessary to take into consideration a superposition of both distortion effects. The sputtering of a GaAs/A1As multilayer has been calculated on a personal computer with the binary collision approximation code T-DYN by Biersack and with an own layer model. A new computer code LAMBDA has been used for the investigation of the influence of the AES information depth in addition to atomic mixing and preferential sputtering. A comparison of the calculated and the measured depth profile explains the observed effects. Therefore conclusions can be drawn about the original elemental distribution in the sample from the measured depth profile.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00322057
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Interpretation of sputter depth profiles by mixing simulations (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 307-310 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The interpretation of sputter depth profiles can be simplified by use of computer simulations. Distortions caused by mixing effects and distortions caused by the information depth of the analytical method have to be distinguished. Atomic mixing and the information depth distort the depth profile simultaneously. Therefore, it is necessary to take into consideration a superposition of both distortion effects. The sputtering of a GaAs/A1As multilayer has been calculated on a personal computer with the binary collision approximation code T-DYN by Biersack and with an own layer model. A new computer code LAMBDA has been used for the investigation of the influence of the AES information depth in addition to atomic mixing and preferential sputtering. A comparison of the calculated and the measured depth profile explains the observed effects. Therefore conclusions can be drawn about the original elemental distribution in the sample from the measured depth profile.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s0021653530307
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Simulation of sputter-induced roughness for depth profiling of thin film structures (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 447-449 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Sputtering induced surface roughening is the dominant factor that degrades depth resolution in sputter profiling of polycrystalline film samples. Due to the dependence of the sputtering yield on the crystallographic orientation, ion beam incidence angle and composition, the local sputtering rate differs from grain to grain. A simple computer program based on a model of Marton and Fine can simulate such a roughness development within one layer, an improved version can even be applied for interfaces. A further extension of the program using a model of Hauffe includes effects like shadowing and enhanced peak erosion leading to surface smoothing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s0021653530447
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Simulation of sputter-induced roughness for depth profiling of thin film structures (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 447-449 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Sputtering induced surface roughening is the dominant factor that degrades depth resolution in sputter profiling of polycrystalline film samples. Due to the dependence of the sputtering yield on the crystallographic orientation, ion beam incidence angle and composition, the local sputtering rate differs from grain to grain. A simple computer program based on a model of Marton and Fine can simulate such a roughness development within one layer, an improved version can even be applied for interfaces. A further extension of the program using a model of Hauffe includes effects like shadowing and enhanced peak erosion leading to surface smoothing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00322086
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
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