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  • Electronic Resource  (3)
  • 2005-2009  (1)
  • 2000-2004  (2)
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  • Electronic Resource  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6433-6435 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the differences in the temperature dependence of exchange anisotropy of PdPtMn/CoFeB, NiFe, and NiFeTa bilayers to understand the role of ordering temperatures. The three different ferromagnetic layers [Curie temperatures: TCNiFeTa(400 °C)〈TCNiFe(570 °C)〈TCCoFeB(1040 °C)] exchange biased by the same antiferromagnet [Néel temperature: TNPdPtMn(600 °C)] showed significantly different behavior: the exchange bias field was monotonically decreasing with temperature for the CoFeB and showed distinct, broad peak for NiFe and NiFeTa at a lower temperature before it decreased above 200 °C. The temperature dependence of exchange anisotropy, calculated from the measured exchange bias field and saturation magnetization, was also different for the three bilayers as a result of the differences in Hua and MFM. The results could be understood by the modified thermal fluctuation aftereffect model, which includes the temperature dependence of the ferromagnetic magnetization and the assumption that the ordering temperature of the ferromagnetic film is different at the interface with antiferromagnet from the rest of the ferromagnetic film due to the exchange coupling with a material with high Néel temperature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1743-1745 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion behavior of ion-implanted arsenic and phosphorus in relaxed Si0.8Ge0.2 has been investigated. Under equilibrium, extrinsic conditions, both dopants are observed to diffuse faster in SiGe than in Si. Simulations of the measured profiles suggest that the ratio of the effective diffusivity in Si0.8Ge0.2 compared to that in Si is roughly seven for arsenic, and roughly two for phosphorus. Under transient diffusion conditions, the arsenic diffusivity in SiGe is retarded, and the magnitude of the diffusion is roughly the same as that in Si. This result suggests that it is possible to optimize the diffusion conditions to achieve n+ source/drain junctions that are as shallow in SiGe as in Si. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 317-318 (Aug. 2006), p. 89-92 
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: By the usage of the hydrolysis of Ti alkoxide, various types of TiO2 were obtained throughthe addition of catalyst (HCl, NH4OH, and CH3COONH4) and some additives into Ti alkoxidesolution at room temperature. In special, the effect of two additives, diethylene glycol (DEG) andhexamethylphospheric triamide (HMPA), on hydrolysis behaviors and microstructure with variouscatalyst for hydrolysis of Ti-tetraisopropoxide was in detail investigated. In case of TiO2 powder withHMPA as an additive, the crystallinity of TiO2 except with NH4OH as a catalyst decreased in XRDpatterns, compared to those of products with no additive and with DEG as an additive. The additionof HMPA prohibited the growth of TiO2 and led to fine TiO2 with the average particle size ofapproximately 10nm
    Type of Medium: Electronic Resource
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