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  • Electronic Resource  (48)
  • 2005-2009  (23)
  • 2000-2004  (25)
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  • Electronic Resource  (48)
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  • 1
    Electronic Resource
    Electronic Resource
    Lattice Strain and Dislocations in Polished Surfaces on Sapphire (2005)
    Oxford, UK : Blackwell Science Inc
    Journal of the American Ceramic Society 88 (2005), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Polishing of ceramics, surface defects and strain are introduced that influence the mechanical properties in the final products. In this study, the sapphire surfaces with a-plane and c-plane were polished using several kinds of diamond slurry, and the introduced damaged zones were investigated using transmission electron microscopy (TEM), high-resolution TEM, and TEM-CBED (convergent beam electron diffraction). It was found that the types of slip systems and strain distribution were different between the a-plane-polished and the c-plane-polished specimens. That is, the basal slip and the prism slip were mainly activated in the c- and a-plane-polished specimens to form the different damaged zones. This difference was probably due to the difference in the direction and angle from the slip plane and applied shear stress during the polishing. On the basis of these observations, the types of introduced dislocations and distribution of strain were discussed to clarify the mechanism of polishing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2005.00398.x
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  • 2
    Electronic Resource
    Electronic Resource
    Direct Characterization of Grain-Boundary Electrical Activity in Doped (Ba0.6Sr0.4)TiO3 by Combined Imaging of Electron-Beam-Induced Current and Electron-Backscattered Diffraction (2004)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 87 (2004), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Simultaneous measurements of remote electron beam induced current (REBIC) and orientation imaging microscopy (OIM) in a scanning electron microscope (SEM) have been applied to a polycrystalline (Ba0.6Sr0.4)TiO3 with a positive temperature coefficient of resistivity (PTCR) to elucidate a grain-boundary character dependence of the potential barrier formation. The absence of electrical activity in a coherent Σ3 twin boundary is clearly imaged. The resistivity of individual grain boundaries estimated from a resistive contrast image is interpreted in terms of geometrical coherency, which is defined by the degree of coincidence in the reciprocal lattice points.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2004.01153.x
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  • 3
    Electronic Resource
    Electronic Resource
    Current–Voltage Characteristics of Cobalt-Doped Inversion Boundaries in Zinc Oxide Bicrystals (2003)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Undoped and cobalt-doped basal inversion boundaries were fabricated in ZnO bicrystals to investigate their current–voltage characteristics. High-resolution transmission electron microscopy observations and energy-dispersive X-ray spectroscopy analyses for a cobalt-doped bicrystal revealed that the boundary was highly coherent and free from intergranular phases and precipitates, but a certain amount of cobalt was present near the boundary. The cobalt-doped bicrystals exhibited nonlinear characteristics that depended on cooling rates from annealing temperature, in contrast to linear characteristics of the undoped bicrystals. It is suggested that the presence of cobalt impurities enhances the formation of acceptor-like native defects near the boundaries to generate electrostatic potential barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2003.tb03526.x
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  • 4
    Electronic Resource
    Electronic Resource
    Cubic-Formation and Grain-Growth Mechanisms in Tetragonal Zirconia Polycrystal (2003)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The microstructure in Y2O3-stabilized tetragonal zirconia polycrystal (Y-TZP) sintered at 1300°–1500°C was examined to clarify the role of Y3+ ions on grain growth and the formation of cubic phase. The grain size and the fraction of the cubic phase in Y-TZP increased as the sintering temperature increased. Both the fraction of the tetragonal phase and the Y2O3 concentration within the tetragonal phase decreased with increasing fraction of the cubic phase. Scanning transmission electron microscopy (SEM) and X-ray energy dispersive spectroscopy (EDS) measurements revealed that cubic phase regions in grain interiors in Y-TZP generated as the sintering temperature increased. High-resolution electron microscopy and nanoprobe EDS measurements revealed that no amorphous layer or second phase existed along the grain-boundary faces in Y-TZP and Y3+ ions segregated at their grain boundaries over a width of ∼10 nm. Taking into account these results, it was clarified that cubic phase regions in grain interiors started to form from grain boundaries and the triple junctions in which Y3+ ions segregated. The cubic-formation and grain-growth mechanisms in Y-TZP can be explained using the grain boundary segregation-induced phase transformation model and the solute drag effect of Y3+ ions segregating along the grain boundary, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2003.tb03483.x
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  • 5
    Electronic Resource
    Electronic Resource
    Atomic Structures and Energies of Σ7 Symmetrical Tilt Grain Boundaries in Alumina Bicrystals (2003)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Symmetrical Σ7 tilt grain boundaries of alumina (Al2O3) were studied using bicrystals. Three types of Σ7 boundaries were successfully fabricated, that is, rhombohedral twin (Σ7{1[Onemacr]02}) and two types of [0001] symmetrical tilt grain boundaries with grain-boundary planes {4[Fivemacr]10} and {2[Threemacr]10} (Σ7{4[Fivemacr]10} and Σ7{2[Threemacr]10}). Their atomic structures and grain-boundary energies were investigated using high-resolution transmission electron microscopy (HRTEM) and a thermal grooving technique, respectively. HRTEM observations showed that the Σ7{1[Onemacr]02} boundary had a completely symmetrical atomic arrangement with respect to the grain-boundary plane. In contrast, Σ7{2[Threemacr]10} and Σ7{4[Fivemacr]10} boundaries exhibited asymmetrical atomic structures, which were confirmed by analyzing the atomic configurations using static lattice calculations. Thermal grooving experiments showed that the grain-boundary energies strongly depended on the properties of the grain-boundary planes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2003.tb03343.x
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  • 6
    Electronic Resource
    Electronic Resource
    Dislocation Structures of Low-Angle and Near-Σ3 Grain Boundaries in Alumina Bicrystals (2003)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Alumina bicrystals with low-angle and near-Σ3 〈0001〉 tilt grain boundaries were fabricated using diffusion bonding to study the dislocation structures in alumina grain boundaries. The resulting grain-boundary structures were investigated using high-resolution transmission electron microscopy, and the grain-boundary energies were analyzed using theoretical calculations. It was found that partial dislocations with Burgers vectors of the type return ⅓〈10[Onemacr]0〉 were periodically located in the boundaries and that a stacking fault between pairs of partials was formed in such boundaries. The length of the stacking fault decreased with increased misorientation angles, which was reasonably predicted by the theoretical calculation. In the case of a near-Σ3 grain boundary, an array of displacement shift complete dislocations with the Burgers vector of return ⅓〈1[Onemacr]00〉 was periodically formed along the boundaries. These boundaries did not have stacking faults. The spacing between the dislocations decreased with increased deviation angle from the exact-Σ3 boundary with the tilt angle of 60°.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2003.tb03346.x
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of Cation Doping on the Superplastic Flow in Yttria-Stabilized Tetragonal Zirconia Polycrystals (2001)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 84 (2001), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The superplastic characteristics of various cation-doped yttria-stabilized tetragonal zirconia polycrystals (Y-TZP) were examined. For 1 mol% cation doping the true stress of Y-TZP is very dependent on the ionic radii of the doped cations; for instance, smaller cation radii give rise to lower true stress when compared with the other compositions for the same grain size, strain rate, and testing temperature. The altered true stress level must be due to the change in diffusivity of the accommodation process for grain boundary sliding caused by the addition of cations in ZrO2. The strain to failure of the doped zirconia is affected by both ionic radius and valence of the dopant cations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2001.tb00920.x
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  • 8
    Electronic Resource
    Electronic Resource
    Direct Observations of Debonding of Reinforcing Grains in Silicon Nitride Ceramics Sintered with Yttria Plus Alumina Additives (2005)
    Oxford, UK : Blackwell Science Inc
    Journal of the American Ceramic Society 88 (2005), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: As in fiber-reinforced composites, debonding, which allows the elongated reinforcing grains to at least partially separate from the rest of the matrix, is a critical part of the toughening mechanism in self-reinforced silicon nitrides. In situ high-resolution electron microscopy observations reveal that the debonding path can occur at the interface between the grains and continuous nanometer-thick intergranular film (IGF) or within the IGF depending on the film's composition, which varies with the yttria to alumina ratio in the fixed total amount of sintering additives. Theoretical calculations reveal that the bonding across the interface can be weakened by decreasing the Al and O content (z) of the epitaxial Si6–ZAlZOZN8–Z layer on the grains, which is consistent with the observations of interfacial debonding. However, evidence also indicates that weakening of the amorphous network of the IGF occurs with increase in yttrium levels that can be responsible for the observed mixture of debonding by crack propagation along the interface and within the IGF when the sintering additive contains the highest yttria:alumina ratio.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2005.00237.x
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  • 9
    Electronic Resource
    Electronic Resource
    Microstructural Analysis of Liquid-Phase-Sintered β-Silicon Carbide (2002)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 85 (2002), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The microstructures of fine-grained β-SiC materials with α-SiC seeds annealed either with or without uniaxial pressure at 1900°C for 4 h in an argon atmosphere were investigated using analytical electron microscopy and high-resolution electron microscopy (HREM). An applied annealing pressure can greatly retard phase transformation and grain growth. The material annealed with pressure consisted of fine grains with β-SiC as a major phase. In contrast, the microstructure in the material annealed without pressure consisted of elongated grains with half α-SiC. Energy-dispersive X-ray analysis showed no differences in the amount of segregation of aluminum and oxygen atoms at grain boundaries, but did show a significant difference in the segregation of yttrium atoms at grain boundaries along SiC grains for the two materials. The increased segregation of yttrium ions at grain boundaries caused by the applied pressure might be the reason for the retarded phase transformation and grain growth. HREM showed a thin secondary phase of 1 nm at the grain boundary interface for both materials. The development of a composite grain consisting of a mixture of β/α polytypes during annealing was a feature common to both materials. The possible mechanisms for grain growth and phase transformation are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2002.tb00107.x
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  • 10
    Electronic Resource
    Electronic Resource
    Current-Voltage Characteristics across (0001) Twist Boundaries in Zinc Oxide Bicrystals (2002)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 85 (2002), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Current-voltage (I–V) characteristics across (0001) twist boundaries with various misorientation angles were investigated in undoped ZnO bicrystals fabricated by a hot-joining technique. It was confirmed by high-resolution transmission electron microscopy that the boundaries were perfectly joined without intergranular phase. None of the bicrystals prepared in this study exhibited nonlinear I–V characteristics irrespective of coherency at the boundaries. Therefore, grain-boundary atomic configuration had no relation to the formation of double Schottky barriers at the (0001) twist boundaries in ZnO.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2002.tb00424.x
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