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  • Electronic Resource  (71)
  • 2000-2004  (12)
  • 1995-1999  (56)
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  • Electronic Resource  (71)
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  • 1
    Electronic Resource
    Electronic Resource
    Comparison of gain and threshold current density for InGaAsP/GaAs (λ=808 nm) lasers with different quantum well thickness (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8832-8834 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the quantum-size effects of quantum well (QW) on gain and threshold current density for InGaAsP/GaAs (λ=808 nm) laser diodes. In this work, a comparison is made of lasers with different QW thickness while keeping the optical confinement factors constant. We found that the threshold current density and differential efficiency were not affected by narrowing the QW thickness. The theoretical model taking into account the mixing of the valence bands and momentum relaxation for InGaAsP/GaAs lasers with spontaneous emission (optically pumped) measurement shows that the absence of difference between these structures can be attributed to the high relaxation rate. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362508
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  • 2
    Electronic Resource
    Electronic Resource
    Possibility of multiple tunnelling current peaks in a coupled quantum well system (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 943-947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we have numerically integrated in space and time the effective-mass nonlinear Schrödinger equation for an electron wave packet in a bilayer electron system. Considering both Hartree and exchange-correlation potentials, we have calculated the tunnelling rates between the two quantum wells when an external bias is applied in the double quantum well system. Due to the nonlinear effective-mass equation, it is found that the charge dynamically trapped in both wells produces a reaction field which modifies the system resonant condition. At different electronic sheet densities, we have shown the possibility of having multiple resonant tunnelling peaks in a bilayer electron system. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373760
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  • 3
    Electronic Resource
    Electronic Resource
    High-performance quantum cascade lasers (λ∼11 μm) operating at high temperature (T ≥425 K) (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 416-418 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report record-low threshold current density and high output power for λ∼11 μm Al0.48In0.52As/Ga0.47In0.53As quantum cascade lasers operating up to 425 K. The threshold current density is 1.1, 3.83, and 7.08 kA/cm2 at 80, 300, and 425 K, respectively, for 5 μs pulses at a 200 Hz repetition rate. The cavity length is 3 mm with a stripe width of 20 μm. The maximum peak output power per facet is 1 W at 80 K, 0.5 W at 300 K, and more than 75 mW at 425 K. The characteristic temperature of these lasers is 174 K between 80 and 300 K and 218 K in the range of 300–425 K. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343848
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  • 4
    Electronic Resource
    Electronic Resource
    Lateral epitaxial overgrowth of GaN films on sapphire and silicon substrates (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 570-572 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the lateral epitaxial overgrowth of GaN films on (00.1) Al2O3 and (111) Si substrates by metalorganic chemical vapor deposition. The lateral epitaxial overgrowth on Si substrates was possible after achieving quasimonocrystalline GaN template films on (111) Si substrates. X-ray diffraction, photoluminescence, scanning electron microscopy, and atomic force microscopy were used to assess the quality of the lateral epitaxial overgrown films. Lateral growth rates more than five times as high as vertical growth rates were achieved for both lateral epitaxial overgrowths of GaN on sapphire and silicon substrates. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123148
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  • 5
    Electronic Resource
    Electronic Resource
    Stability of far fields in double heterostructure and multiple quantum well InAsSb/InPAsSb/InAs midinfrared lasers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3236-3238 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Far fields in perpendicular direction to the junction are investigated in double heterostructure (DH) and multiple quantum well (MQW) midwave-infrared InAsSb/InPAsSb/InAs lasers (λ=3.2–3.6 μm). Strong broadening of the far fields in the DH lasers was observed with increases in temperature and/or current. On the contrary, MQW lasers with otherwise identical structure exhibit very stable far fields as narrow as 23° for all the operating conditions investigated. Our experiment and theoretical modeling suggest that these different behaviors of far fields in DH and MQW lasers are attributed to the refractive index fluctuation in the InAsSb laser active region. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119135
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  • 6
    Electronic Resource
    Electronic Resource
    High-temperature continuous-wave operation of λ∼8 μm quantum cascade lasers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 173-175 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report single-mode continuous-wave operation of a λ∼8 μm quantum cascade laser at 140 K. The threshold current density is 4.2 kA/cm2 at 300 K in pulsed mode and 2.5 kA/cm2 at 140 K in continuous wave for 2 mm long index-guided laser cavities of 20 μm width. Wide stripe (W∼100 μm), index-guided lasers from the same wafer in pulsed operation demonstrate an average T0 of 210 K with other wafers demonstrating a T0 as high as 290 K for temperatures from 80 to 300 K. This improvement in high-temperature performance is a direct result of three factors: excellent material quality, a low-loss waveguide design, and a low-leakage index-guided laser geometry. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123284
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  • 7
    Electronic Resource
    Electronic Resource
    Long-term reliability of Al-free InGaAsP/GaAs (λ=808 nm) lasers at high-power high-temperature operation (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3042-3044 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the long-term reliability measurement on uncoated Al-free InGaAsP/GaAs (λ=808 nm) lasers at high-power and high-temperature operation. No degradation in laser performance has been observed for over 30 000 h of lifetime testing in any of randomly selected several 100-μm-wide uncoated lasers operated at 60 °C with 1 W continuous wave output power. This is the first and the most conclusive evidence ever reported that directly shows the high long-term reliability of uncoated Al-free lasers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119431
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  • 8
    Electronic Resource
    Electronic Resource
    Cutting of a thin epitaxial iron film into low dimensional structures by dislocation engineering (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2195-2197 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The "Atomic saw" method, initially developed for semiconductor heterostructures, has been successfully used to fabricate low dimensional iron structures. Dislocations, generated by plastic deformation, are used to cut a 2 nm iron film, epitaxially grown onto a (001) MgO substrate, into one dimensional iron structures (called "stripes") or zero dimensional structures (called "boxes"). Atomic force microscopy observations of the created magnetic structures demonstrate the applicability of this simple method. A statistical analysis of these observations quantifies the distributions of the widths and the shifts of the created adjacent stripes and reveals that these two parameters can be controlled by the choice of the plastic strain. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119039
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  • 9
    Electronic Resource
    Electronic Resource
    InAsSbP/InAsSb/InAs laser diodes (λ=3.2 μm) grown by low-pressure metal–organic chemical-vapor deposition (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 40-42 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report metal–organic chemical-vapor deposition-grown double heterostructure InAsSbP/InAsSb/InAs diode lasers emitting at 3.2 μm operating at temperatures up to 220 K with threshold current density of 40 A/cm2 at 77 K and characteristic temperature up to 42 K. Output powers as high as 260 mW in pulse mode and 60 mW in continuous wave operation have been obtained from an uncoated 100 μm stripe-width broad-area laser at 77 K. Comparison with theory shows that there is no significant nonradiative recombination mechanism for these lasers at 77 K. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119298
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  • 10
    Electronic Resource
    Electronic Resource
    Optical losses of Al-free lasers for λ=0.808 and 0.98 μm (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2983-2985 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we study the origin of the optical losses in Al-free InGaAsP/GaAs (λ=0.808 μm) and InGaAs/GaAs/InGaP (λ=0.980 μm) lasers. Theoretical modeling and the experimental results indicate that the scattering of the laser beam by refractive index fluctuation in the alloys is the dominant loss in our lasers, and the loss due to the free-carrier absorption and scattering by interface roughness are negligible. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117751
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