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  • 1
    Electronic Resource
    Electronic Resource
    Photorefractive InGaAs/GaAs multiple quantum wells in the Franz–Keldysh geometry (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5889-5896 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We fabricate semi-insulating InGaAs/GaAs multiple quantum wells and observe the excitonic enhancement of the photorefractivity in the Franz–Keldysh geometry at wavelengths of 0.92–0.94 μm. A maximum two-wave mixing gain of 138 cm−1 and a maximum diffraction efficiency of 1.5×10−4 are obtained. The saturation intensity and the spatial resolution are also measured by four-wave mixing. The diffraction efficiency is saturated at a high external electric field. The dominant cause of this saturation is the deviation of the excitonic electroabsorption from its quadratic law. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370364
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  • 2
    Electronic Resource
    Electronic Resource
    Observation of a single photoluminescence peak from a single quantum dot (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3257-3259 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observed a very sharp photoluminescence peak from a single GaAs/AlGaAs quantum dot structure by using a microphotoluminescence measurement technique. The spectral linewidth was more suppressed by decreasing the excitation laser power, which is mainly due to reduction of the filling effect of quantized energy levels. The minimal spectral linewidth with low excitation laser power was 0.9 meV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114890
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  • 3
    Electronic Resource
    Electronic Resource
    One-dimensional exciton diffusion in GaAs quantum wires (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1535-1537 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One-dimensional diffusion of excitons in GaAs quantum wires was observed by using microphotoluminescence measurements at low temperature. The observed diffusion length increased with decreasing wire width from 30 to 15 nm, and decreased from 15 to 7 nm, where maximum diffusion length was about 4 μm for the 15 nm quantum wire, which is the largest value so far reported. It is considered that the change of diffusion length versus wire width is caused by the competition between one-dimensional character and the interface fluctuation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114484
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  • 4
    Electronic Resource
    Electronic Resource
    Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 8349-8352 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report structural and optical properties of GaSb/GaAs self-assembled quantum dots (QDs) grown by molecular beam epitaxy. The QDs, with nanometer-scale dimensions, were characterized by atomic force microscopy. Furthermore, in photoluminescence (PL) measurements the feature from the QDs was observed at ∼1.1 eV, clearly separated from that of the wetting layer at ∼1.3 eV. With increasing excitation power, the peak from the QDs displayed a large shift towards higher energy. In addition, the temperature dependence of PL yielded a large thermal activation energy, 130 meV, confirming the strong localization of excitons in the QDs. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370622
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  • 5
    Electronic Resource
    Electronic Resource
    Time-resolved photoluminescence of GaN/Al0.5Ga0.5N quantum wells (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1005-1007 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report photoluminescence (PL) and time-resolved PL measurements of GaN/AlxGa1−xN multiple quantum wells with barriers of high aluminum content, x=0.5. In wells of width 1–2 nm, low temperature recombination appears to be dominated by radiative processes with lifetimes ∼0.5 ns. Dependence of lifetime on emission energy is very small compared to InGaN quantum wells, indicating that carrier localization is very slight and interface quality is high. In 4 nm wells, PL emission at an energy below the bulk GaN band gap and long recombination lifetimes result from the polarization field across the wells. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289041
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  • 6
    Electronic Resource
    Electronic Resource
    Influence of strain relaxation of the AlxGa1−xN barrier on transport properties of the two-dimensional electron gas in modulation-doped AlxGa1−xN/GaN heterostructures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2746-2748 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Influences of the thickness of the Si-doped n-type Al0.22Ga0.78N barrier and the thickness of the Al0.22Ga0.78N spacer on mobility and density of the two dimensional electron gas (2DEG) in modulation-doped Al0.22Ga0.78N/GaN heterostructures were investigated. 2DEG mobilities of 1274 cm2/V s at 300 K and 4495 cm2/V s at 77 K were reached. Both 2DEG mobility and density decrease dramatically when the Al0.22Ga0.78N barrier becomes partially relaxed, indicating that transport properties of the 2DEG are influenced significantly by the piezoelectric polarization of the Al0.22Ga0.78N layer. From our results, the critical thickness of an Al0.22Ga0.78N layer on GaN is estimated to be between 65 and 75 nm, which is much higher than that predicted by theoretical calculation. This may be attributed to the interaction of misfit dislocations and the presence of a high density of extended defects in the Al0.22Ga0.78N layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126463
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  • 7
    Electronic Resource
    Electronic Resource
    Observation of enhanced spontaneous emission coupling factor in nitride-based vertical-cavity surface-emitting laser (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 722-724 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate an enhancement of spontaneous emission coupling factor β in a nitride-based vertical-microcavity surface-emitting laser. The 2.5λ vertical microcavity, the quality factor of which reaches 740, is sandwiched between a nitride and an oxide distributed Bragg reflector. From input–output measurements and analyses of the rate equations, the β of the lasing mode at a wavelength of 396.1 nm is estimated to be 1.6×10−2. The estimated β can be well accounted for by a simple theoretical model. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430855
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence from sub-nanometer-thick GaN/Al0.8Ga0.2N quantum wells (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1336-1338 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) spectra were measured for sub-nanometer-thick GaN quantum wells (QWs) with Al0.8Ga0.2N barriers, which were grown by atmospheric-pressure metal–organic chemical-vapor deposition. The thickness of the GaN QW layers was systematically varied from 1 to 4 ML. We clearly observed a PL peak at room temperature at a wavelength as short as 247 nm (5.03 eV) from 1-ML-thick QWs. The effective confinement energy, or difference between this recombination energy and the band gap of bulk GaN, is as large as 1.63 eV. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290151
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of carrier confinement on photoluminescence from modulation-doped AlxGa1−xN/GaN heterostructures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 679-681 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) of modulation-doped Al0.22Ga0.78N/GaN heterostructures was investigated. The PL peak related to recombination between the two-dimensional electron gases (2DEG) and photoexcited holes is located at 3.448 eV at 40 K, which is 45 meV below the free excitons (FE) emission in GaN. The peak can be observed at temperatures as high as 80 K. The intensity of the 2DEG PL peak is enhanced significantly by incorporating a thin Al0.12Ga0.88N layer into the GaN layer near the heterointerface to suppress the diffusion of photoexcited holes. The energy separation of the 2DEG peak and the GaN FE emission decreases with increasing temperature. Meanwhile, the 2DEG peak energy increases with increasing excitation intensity. These results are attributed to the screening effect of electrons on the bending of the conduction band at the heterointerface, which becomes stronger when temperature or excitation intensity is increased. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125859
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  • 10
    Electronic Resource
    Electronic Resource
    Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 383-385 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully grown nanometer-scale InGaN self-assembled quantum dots (QDs) on a GaN surface without any surfactants, using atmospheric-pressure metalorganic chemical vapor deposition. Atomic force microscopy shows that the average diameter of InGaN QDs is as small as 8.4 nm. Next, we have investigated the dependence of the QDs properties on the growth conditions: the amount of InGaN deposited and the growth temperature. Moreover, we have investigated the optical property of InGaN QDs, so that the strong emission was seen at 2.86 eV at room temperature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123078
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