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Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy (1999)

Suzuki, K. ; Hogg, R. A. ; Arakawa, Y.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 85 (1999), S. 8349-8352

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We report structural and optical properties of GaSb/GaAs self-assembled quantum dots (QDs) grown by molecular beam epitaxy. The QDs, with nanometer-scale dimensions, were characterized by atomic force microscopy. Furthermore, in photoluminescence (PL) measurements the feature from the QDs was observed at ∼1.1 eV, clearly separated from that of the wetting layer at ∼1.3 eV. With increasing excitation power, the peak from the QDs displayed a large shift towards higher energy. In addition, the temperature dependence of PL yielded a large thermal activation energy, 130 meV, confirming the strong localization of excitons in the QDs. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.370622

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