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  • 1
    Electronic Resource
    Electronic Resource
    Identification of expression changes of prognostic and therapeutic value in metastasizing medulloblastoma (2001)
    [s.l.] : Nature Publishing Group
    Nature genetics 27 (2001), S. 89-89 
    Details
    ISSN: 1546-1718
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Medicine
    Notes: [Auszug] Medulloblastoma is a highly malignant cerebellar tumor of children and, less frequently, of adults, with a tendency to early recurrence and dissemination. Despite recent advances in patient survival, the quality of life for survivors is poor due to neurocognitive, neuroendocrine, and hearing ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/87316
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  • 2
    Electronic Resource
    Electronic Resource
    Metal oxide-support interactions in silica-supported iron oxide catalysts probed by nitric oxide adsorption (1982)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 86 (1982), S. 3022-3032 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100212a042
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  • 3
    Electronic Resource
    Electronic Resource
    In-plane optical anisotropy of symmetric and asymmetric (001) GaAs/Al(Ga)As superlattices and quantum wells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1266-1270 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two sensitive polarized spectroscopies, reflectance difference spectroscopy and photocurrent difference spectroscopy, are used to study the characteristic of the in-plane optical anisotropy in the symmetric and the asymmetric (001) GaAs/Al(Ga)As superlattices (SLs). The anisotropy spectra of the symmetric and the asymmetric SLs show significant difference: for symmetric ones, the anisotropies of the 1HH→1E transition (1H1E) and 1L1E are dominant, and they are always approximately equal and opposite; while for asymmetric ones, the anisotropy of 1H1E is much less than that of 1L1E and 2H1E, and the anisotropy of 3H2E is very strong. The calculated anisotropy spectra within the envelope function model agree with the experimental results, and a perturbation approach is used to understand the role of the electric field and the interface potential in the anisotropy. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1383018
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  • 4
    Electronic Resource
    Electronic Resource
    Manakov solitons and polarization mode dispersion (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 10 (2000), S. 529-538 
    Details
    ISSN: 1089-7682
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of polarization mode dispersion (PMD) on Manakov solitons and dispersion managed solitons is treated analytically and by numerical simulation. In the analytic approach the internal motion of the Manakov soliton is represented as a damped harmonic oscillator. The PMD functions as a white noise source driving the oscillations. It is shown that the solitons can withstand PMD up to a certain instability threshold for which an analytic expression is obtained. This threshold is also evaluated for dispersion managed solitons. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1286261
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  • 5
    Electronic Resource
    Electronic Resource
    AlxGa1−xN/GaN band offsets determined by deep-level emission (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1887-1890 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present studies of the compositional dependence of the optical properties of AlxGa1−xN(0〈x〈0.22) alloys by modulation spectroscopy and photoluminescence. The yellow luminescence, which is well known in GaN and is generally assigned to shallow donor–deep acceptor pair recombination has also been observed in AlxGa1−xN. As aluminum concentration increases, the color of the band changes from yellow (2.2 eV) to blue (2.6 eV). The shift was less than that of the band gap. Together with previously published studies, it implies that the deep acceptor level is pinned to a common reference level to both materials, thus the deep level responsible for the yellow emission is used as a common reference level to determine the band alignment in AlxGa1−xN/GaN heterojunctions. Combining with the near-band-edge modulation spectra, the estimated ratio of conduction-to-valence band discontinuity is 65:35. Our results are close to the values obtained from PL measurements on Al0.14Ga0.86N/GaN quantum wells and those calculated by linear muffin-tin orbital method and linearized augmented plane wave method. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1383259
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetic anisotropy in a permalloy microgrid fabricated by near-field optical lithography (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 521-523 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fabrication and magnetic properties of permalloy microgrids prepared by near-field optical lithography and characterized using high-sensitivity magneto-optical Kerr effect techniques. A fourfold magnetic anisotropy induced by the grid architecture is identified. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1379048
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5433-5436 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The size and shape evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0 ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9 ML deposition on GaAs(100) substrate. Based on comparisons with the formation of large incoherent InAs islands on single-layer samples at late growth stage, the larger coherent InAs quantum dots at 2.9 ML deposition has been observed on the second InAs layer. A simple model analysis accounting for the surface strain distribution influenced by buried islands gives a stronger increment of critical QD diameter for dislocation nucleation on the second layer in comparison with the single-layer samples. Additionally, the inhibition of dislocation nucleation in InGaAs/GaAs large islands can also be explained by our theoretical results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318371
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  • 8
    Electronic Resource
    Electronic Resource
    Magnetic properties and domains in Co–Ag granular thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4837-4839 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intrinsic perpendicular magnetic anisotropy and the domain patterns in granular CoxAg1−x films with 17%≤x≤62% are studied. Magnetic stripe domains are found in samples with x≥45% and to change to in-plane domain patterns with increasing annealing temperature. This is consistent with the fact that perpendicular magnetic anisotropy becomes negative with annealing. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373175
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  • 9
    Electronic Resource
    Electronic Resource
    Nonlinear behaviors of valence-band splitting and deformation potential in dilute GaNxAs1−x alloys (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1446-1449 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance and piezoreflectance investigations have been performed on a series of GaNAs layers grown by low-pressure metal-organic chemical vapor deposition on Si-doped GaAs substrate. In addition to the observation of the fundamental band-gap and spin-orbit splitting, the valence-band splitting in thin GaNxAs1−x epilayers strained coherently by the GaAs substrate is observed in these modulation spectra. Comparing photoreflectance with piezoreflectance spectra, we clearly establish the transitions involving the heavy-hole and light-hole bands. We find that the valence-band splitting increases with increasing nitrogen composition, and it decreases with increasing temperature. We point out that the underlying origin of our observation can be attributed to the effect of lattice mismatch between GaNAs film and GaAs substrate. We also find that the deformation potential of GaNxAs1−x does not follow the linear interpolation of those for GaAs and GaN. It shows a strong composition dependence with a bowing in the small composition. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1488240
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  • 10
    Electronic Resource
    Electronic Resource
    Room-temperature 1.54 μm electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n+-Si substrates by magnetron sputtering (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5835-5837 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature 1.54 μm electroluminescence (EL) was compared for Au/SiO2:Er/n+-Si and Au/SiOx:Si:Er/n+-Si diodes under reverse bias. The 18 nm thick SiO2:Er and SiOx:Si:Er films were deposited by the magnetron sputtering technique. The maximum of the EL intensity was reached after annealing at 900 °C (SiO2:Er) and 800 °C (SiOx:Si:Er). The threshold potential of the EL was about 4 and 6 V for the Au/SiOx:Si:Er/n+-Si and Au/SiO2:Er/n+-Si diodes, respectively. The power efficiency was larger for the Au/SiOx:Si:Er/n+-Si diode than that for the Au/SiO2:Er/n+-Si diode by six times. Our experimental results demonstrate that the existence of Si nanoclusters reduces the threshold potentials of the EL and strongly enhances the power efficiency for Er3+ EL. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1413231
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