Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Electronic Resource  (35)
  • 2000-2004  (13)
  • 1970-1974  (22)
  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial PbZr.52Ti.48O3 films on SrTiO3/(001)Si substrates deposited by sol–gel method (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1062-1064 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the sol–gel deposition and characterization of high-quality, epitaxial films of PbZr.52Ti.48O3 (PZT) on (001)Si substrates, with a thickness range of 400 Å to 1 μm. The epitaxial growth of PZT on (001)Si is achieved using a thin template layer of SrTiO3, grown by molecular-beam epitaxy. The sol–gel PZT films have a typical surface roughness of 5 Å and exhibit well defined reflective high-energy electron diffraction patterns characteristic of smooth, epitaxial films. Using high-resolution transmission electron microscopy and double-crystal x-ray diffraction, we find that the PZT films are oriented with the c axis normal to the (001)Si plane and with the a axis lying along 〈110〉Si direction. Finally, we measure the electromechanical coupling coefficients and the surface acoustic wave velocities for our films as a function of thickness and compare our experimental data to previously published theoretical values for this system. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1498006
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Field effect transistors with SrTiO3 gate dielectric on Si (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1324-1326 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SrTiO3 has been grown epitaxially by molecular beam epitaxy on Si. The capacitance of this 110 Å dielectric film is electrically equivalent to less than 10 Å of SiO2. This structure has been used to make capacitors and metal oxide semiconductor field effect transistors. The interface trap density between the SrTiO3 and the Si is 6.4×1010 states/cm2 eV and the inversion layer mobility is 221 and 62 cm2/V s for n- and p-channel devices, respectively. The gate leakage in these devices is two orders of magnitude smaller than a similar SiO2 gate dielectric field effect transistor. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126023
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Atomic-force-microscopy investigation of the formation and evolution of Ge islands on GexSi1−x strained layers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 391-393 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A constant amount of Ge was deposited on strained GexSi1−x layers of approximately the same thickness but with different alloy compositions, ranging from x=0.06 to x=0.19. From their atomic-force-microscopy images, we found that both the size and density of Ge islands increased with the Ge composition of the strained layer. By conservation of mass, this implies that these islands must incorporate material from the underlying strained layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126986
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    An apoplastic mechanism for short-term effects of rare earth elements at lower concentrations (2003)
    Oxford, UK : Blackwell Science Ltd
    Plant, cell & environment 26 (2003), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: The short-term effects of rare earth elements on pollen germination and tube growth were tested. Concentrations of 2.5∼20 µm lanthanum(La3+) or cerium (Ce3+)increased pollen germination and pollen tube growth, whereas concentrations higher than 40 µm La3+ and Ce3+ inhibited this process. The most effective concentration of La3+ needed for promotion shifted from 10 to 40 µm, depending on the Ca2+ concentration in the medium. Calmodulin (CaM) antagonist W7-agarose and anti-CaM antibody depressed La3+-promoted pollen germination and tube growth in a dose-dependent manner. La3+–CaM complexes (La3+–CaM) increased pollen germination and tube growth more than CaM or La3+ alone. Pertussis toxin (PTX) inhibited La3+-promoted pollen germination and tube growth. Cholera toxin (CTX) partially recovered the inhibition of the above La3+-promoted process by the anti-CaM antibody. Concentrations of 10−7∼10−9 m La3+–CaM increased GTPase activity inside plasma membrane vesicles of the pollen tube, but apo-CaM or La3+ alone had no positive effects. The results suggest that apoplastic CaM may be involved in the promotion effects of lower concentrations of La3+ on pollen germination and tube growth, and the heterotrimeric G-protein on the plasma membrane may transduce La3+-activated CaM signalling. The present studies provide an apoplastic mechanism for short-term effects of rare earth elements at lower concentrations in the pollen system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-3040.2003.01021.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    A probabilistic simulation of fluid leakage in multiple cracks situation (2002)
    Oxford, UK : Blackwell Science Ltd
    Fatigue & fracture of engineering materials & structures 25 (2002), S. 0 
    Details
    ISSN: 1460-2695
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In pressure vessels and piping the leak-before-break (LBB) assessment method is employed to avoid any catastrophic failure prior to a detectable leakage. One of the most important parameter, the leak rate, is investigated in the present paper by means of the Monte Carlo method.A brief review is carried out with emphasis on aspects such as crack growth, crack size with detectable leakage, crack opening area and leak rate. Issues concerning the property and behaviour of multiple cracks are also covered along with a review of the characteristics of leak rate through distributed multiple cracks using a statistical simulation method.The simulation results show that the effect of multiple cracks is quite significant to the LBB concept. Both the relationship between leak rate and crack length (or time) and the statistical characteristics of the leak rate are considerably different for different initial crack conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1460-2695.2002.00539.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    B 2Σ u + excited states of the N + 2 ion and the electron temperature in the discharge afterglow of an Ar-N2 mixture (2000)
    Springer
    Optics and spectroscopy 88 (2000), S. 502-505 
    Details
    ISSN: 1562-6911
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The electron energy distribution function in the afterglow of a low-pressure discharge in an Ar-N2 mixture was experimentally found. The values of electron temperature were determined. At the initial stage of plasma decay, the electron temperature was shown to be close to the nitrogen vibrational temperature. A study was made of the afterglow observed in the bands of the first negative system of N + 2 , and it is shown that this afterglow may be attributed to collisions of argon ions with nitrogen molecules found on higher vibrational levels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.626823
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Prevention of corrosion on assembled steel sections of structures at the Mingechaur hydroelectric station (1974)
    Springer
    Power technology and engineering 8 (1974), S. 703-707 
    Details
    ISSN: 1570-1468
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: Conclusions 1. Although the air-exposed parts of the steel structures of the Mingechaur station operate under relatively favorable conditions, they are nonetheless subjected to uniform corrosion with diminishing intensity; the use of protective coatings is necessary to ensure their long service. 2. Periodically wetted parts of structures are subjected to continuous corrosion with local pitting. The steel structures in these zones suffer great damage. The surfaces of the structures in zones with seasonal daily wetting are subjected to continuing and pitting corrosion with a high and constant rate. Cathodic protection was tested successfully in these zones. 3. In the rooms of the hydro development the most unfavorable zones with respect to corrosion are on those structures near the boundaries of the massive concrete foundation and where a thin layer from condensate or ground-water occurs, i.e., at the interface of two phases with different air permeability. These zones suffer local damage. The thickness of the corrosion products reaches 6–8 mm. To ensure long service in these zones it is necessary to apply cathodic protection using a burlap interlayer as a corrosion reagent between the anode and the surface being protected. 4. The underwater parts of steel structures are damaged by local corrosion. In zones of still water, damage is observed as small spots; in zones with turbulent water the damage is more severe and with a larger number of pits; in the zone of flowing water the damage is a maximum, constant, and in the form of pitting. Cathodic protection is the most effective method for ensuring a long life of steel structures in these zones.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02378086
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Electrochemical protection against corrosion of underwater structures of the V. I. Lenin Mingechaur hydroelectric station (1972)
    Springer
    Power technology and engineering 6 (1972), S. 657-660 
    Details
    ISSN: 1570-1468
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: Conclusions 1. The chemical composition of the water of the Mingechaur reservoir changes little during the year. 2. The corrosion rate of St. 3 is within 0.112–0.038 g/m2·h and decreases with time. Corrosion becomes more pitted with increase of the depth of submergence. 3. For the main intake of the Mingechaur station the recommended protective values of the potentials and current densities for cathodic protection of St. 3 are as follows: in the winter, −960 mV, 1.25 mA/dm2; in the spring. −950 mV, 1.5 mA/dm2; in the summer, −980 mV, 1.75 mA/dm2; in the fall, −1050 mV, 2.25 mA/dm2. Cessation of corrosion of St. 3 was observed at these values of current density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02377798
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    The microstructure and magnetic properties of nanocrystalline Fe100-xSix alloys (2000)
    Springer
    Applied physics 70 (2000), S. 75-78 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 75.50.Bb;85.42.+m;81.20.Ev
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Nanocrystalline Fe100-xSix (x≤25) alloys have been prepared by mechanical alloying. The crystallite size of the nanocrystalline FeSi alloys is about ten to fifteen nm. The individual crystallite separated by disordered grain boundaries has the structure of b.c.c. α-Fe. The Mössbauer patterns show that substitution of Si atoms for Fe ones is almost disordered in the nanocrystalline FeSi alloys. The saturation magnetization of the nanocrystalline FeSi alloys is slightly less than that of single-crystalline and polycrystalline FeSi alloys, whereas their coercive force and effective magnetocrystalline anisotropy constant are higher than those of the corresponding single-crystalline and polycrystalline FeSi alloys. The much higher coercive force and higher effective anisotropy of the nanocrystalline FeSi alloys may be related to the high strain in the grain boundaries.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050014
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Dechlorination of polychlorinated methanes by a sequential methanogenic-denitrifying bioreactor system (2000)
    Springer
    Applied microbiology and biotechnology 53 (2000), S. 484-489 
    Details
    ISSN: 1432-0614
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Abstract A two-stage bioreactor has been developed to link dechlorination of halogenated methane compounds to the anaerobic processes of methanogenesis and denitrification. A digester methanogenic consortium was shown to dechlorinate chloroform (CF) and carbon tetrachloride (CT) to dichloromethane (DCM), and DCM was then mineralized by an acclimated denitrifying biological activated carbon consortium. Combining these two processes, a sequential methanogenic-denitrifying bioreactor (SMDB) system that completely degraded polychlorinated methanes including CT, CF, and DCM was developed. More than 95% of the added CT and CF was dechlorinated in the methanogenic bioreactor with methanol as the primary substrate, and the resultant DCM was biodegraded in the denitrifying bioreactor with nitrate as the electron acceptor. In the denitrifying bioreactor, the residual CF was completely removed, and the DCM removal efficiency was more than 95%. This novel bioreactor system eliminates the need for aeration and so avoids the air contamination associated with aerobic biotreatment of volatile chlorinated pollutants. This SMDB system provides an alternative to conventional biotreatment of wastewaters and other matrices contaminated with polychlorinated methanes and is, to our knowledge, the first report on such a sequential anoxic system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002530051646
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...