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  • 1
    Electronic Resource
    Electronic Resource
    The relationship between the spatially resolved field emission characteristics and the raman spectra of a nanocrystalline diamond cold cathode (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3842-3844 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spatially resolved electron field emission measurements from a nanocrystalline diamond film grown by plasma-enhanced chemical transport deposition have been obtained using a scanning probe apparatus with micrometer resolution. Macroscopic regions with a high emission site density, and turn-on fields below 3 V/μm, comprised approximately 1/2 of the total sample area. The emitting and the nonemitting regions of the specimen are differentiated distinctly by Raman spectra and subtly by morphologies. Both areas are largely sp3-bonded, but only the nonemitting regions exhibit a sharp line at 1332 cm−1, a well-known signature of diamond in larger crystallites. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117123
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial PbZr.52Ti.48O3 films on SrTiO3/(001)Si substrates deposited by sol–gel method (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1062-1064 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the sol–gel deposition and characterization of high-quality, epitaxial films of PbZr.52Ti.48O3 (PZT) on (001)Si substrates, with a thickness range of 400 Å to 1 μm. The epitaxial growth of PZT on (001)Si is achieved using a thin template layer of SrTiO3, grown by molecular-beam epitaxy. The sol–gel PZT films have a typical surface roughness of 5 Å and exhibit well defined reflective high-energy electron diffraction patterns characteristic of smooth, epitaxial films. Using high-resolution transmission electron microscopy and double-crystal x-ray diffraction, we find that the PZT films are oriented with the c axis normal to the (001)Si plane and with the a axis lying along 〈110〉Si direction. Finally, we measure the electromechanical coupling coefficients and the surface acoustic wave velocities for our films as a function of thickness and compare our experimental data to previously published theoretical values for this system. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1498006
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Organometallic vapor phase epitaxy of CoGa on (100)GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1075-1077 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first epitaxial growth of CoGa thin films on (100)GaAs substrates by organometallic chemical vapor deposition. The separate sources (η5-C5H5)Co(CO)2 and Et3Ga were mixed in a stream of carrier gas and decomposed in a conventional cold wall epitaxial reactor between 260 and 300 °C under atmospheric pressure. A typical growth rate of 1 μm/h was achieved and the film composition could be directly monitored from the gas phase composition. The Co-rich films have the α-Co metal structure and react with GaAs at 500 °C to form CoAs. By contrast, Ga-rich β-CoGa films were lattice matched on (100)GaAs and were found to be thermodynamically stable at 500 °C. This work demonstrates that organometallic vapor phase epitaxy is also a suitable technique for the fabrication of buried metal/semiconductor heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107695
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    Paper (German National Licenses)
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