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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1086-1095 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical characteristics associated with radiation detection were measured on single-crystal natural type-IIa diamond using two techniques: charged particle-induced conductivity and time-resolved transient photoinduced conductivity. The two techniques complement each other: The charged particle-induced conductivity technique measures the product of the carrier mobility μ and lifetime τ throughout the bulk of the material while the transient photoconductivity technique measures the carrier mobility and lifetime independently at the first few micrometers of the material surface. For each technique, the μτ product was determined by integration of the respective signals. The collection distance that a free carrier drifts in an electric field was extracted by each technique. As a result, a direct comparison of bulk and surface electrical properties was performed. The data from these two techniques are in agreement, indicating no difference in the electrical properties between the bulk and the surface of the material. The collection distance continues to increase with field up to 25 kV/cm without saturation. Using the transient photoconductivity technique the carrier mobility was measured separately and compared with a simple electron-phonon scattering model. The general characteristics of carrier mobility, lifetime, and collection distance at low electric field appear to be adequately described by the model.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2888-2894 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The combined electron and hole mobility of a single-crystal type IIa natural diamond and a polycrystalline diamond film deposited by chemical vapor deposition (CVD) were measured using transient photoconductivity as a function of excitation density (1013–1017 cm−3) and temperature (120–410 K). In natural diamond the temperature dependence suggests that the mobility is limited by phonon scattering at low free carrier densities, and by electron-hole scattering at high densities. The combined electron and hole phonon-limited mobility at room temperature is 3000 (±500) cm2/V s. In the CVD film, the mobility at room temperature was estimated to be 50 cm2/V s at low excitation densities. The temperature dependence of the mobility-lifetime product at low excitation densities is different from that of natural diamond, and suggests that charged center scattering, rather than acoustic phonon scattering, is the dominant effect. High densities of nitrogen and dislocations are known to be present in the natural diamond, and these appear to be the dominant recombination sites which limit the carrier lifetime. In the polycrystalline film a variety of structural defects and impurities are believed to exist, but it is unknown which of these dominates the transport and recombination properties.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial and engineering chemistry 5 (1966), S. 242-246 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 124-130 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoconductive devices have been fabricated from type IIa diamonds. The sensitivity of these devices is independent of photon energy from 200 to 2200 eV. The dynamic range is 105. The large band gap of the diamond greatly reduces the sensitivity to photons with an energy less than 5.5 eV which is an attractive feature for many applications. The carrier lifetime in the material is 90 ps and the mobility is 1650 cm2/V/s at 106 V/m.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2624-2630 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A treatment that lowers the threshold field for field emission and increases the emission site density from a nominally n-type diamondlike carbon film is described. The film was deposited using an rf plasma of methane and nitrogen gases. The treatment involved deposition of cesium followed by a low temperature anneal. Field emission measurements were used to characterize the threshold field and emission site density before and after cesium treatment. Ultraviolet photoemission was used to study the effect of cesium on the work function. Dramatic improvements to field emission by cesiation cannot be generalized to all diamondlike samples, as similar treatment of a type IIb single-crystal (p-type) diamond did not produce as pronounced an improvement in turn-on field or emission site density. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 623-625 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal natural diamonds have been intrinsically photoexcited using 2 ps laser pulses. Electron and hole mobilities and decay times are examined as a function of induced carrier density. Two major density dependent effects are observed. First, at high induced carrier densities, a dramatic decrease in the carrier mobility is observed. This is attributed to carrier-carrier scattering between the electrons and the holes. A model describing carrier-carrier scattering in silicon and germanium has been scaled to diamond. Second, the decay time of the electrons decreases as the initially photoexcited density increases. A simple one-level recombination model successfully explains this density dependence. The combination of these two effects results in a minimum in the measured photoconductive decay times.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spatially resolved electron field emission measurements from a nanocrystalline diamond film grown by plasma-enhanced chemical transport deposition have been obtained using a scanning probe apparatus with micrometer resolution. Macroscopic regions with a high emission site density, and turn-on fields below 3 V/μm, comprised approximately 1/2 of the total sample area. The emitting and the nonemitting regions of the specimen are differentiated distinctly by Raman spectra and subtly by morphologies. Both areas are largely sp3-bonded, but only the nonemitting regions exhibit a sharp line at 1332 cm−1, a well-known signature of diamond in larger crystallites. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of chemically vapor deposited (CVD) diamond films were measured as a function of film thickness. The samples studied were polycrystalline with the average grain size increasing from approximately 1 μm on the substrate side to approximately 30 μm on the growth surface for the thickest sample. Using time-resolved transient photoconductivity and charged-particle induced conductivity, the collection distance (d) that a free carrier drifts under the influence of an applied electric field was measured. Our data indicate that there is a gradient in the collection distance through the material. This gradient in electrical properties has implications for electronic uses of CVD diamond.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    The @Journal of Chemical Thermodynamics 11 (1979), S. 367-378 
    ISSN: 0021-9614
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 31 (1996), S. 6523-6527 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The popularly accepted concept of “stress induced phase transformation (SIPT)” for tetragonal zirconia polycrystalline (TZP) ceramics has been re-evaluated in this work using an in-situ X-ray diffraction technique that was facilitated by the use of a novel stressing fixture. At stress levels of 700 MPa, which is close to the sample's rupture strength very little of the tetragonal phase transformed to a monoclinic phase, regardless of whether a tensile or compressive stress was applied. However the intensity of the peak (2 0 2)t, (2 2 0)t, (1 1 3)t, and (1 3 1)t, compared with the peak, (1 1 1)t did display a significant change after the tetragonal zirconia was loaded. In the fractured surface, a large amount of monoclinic phase was discovered. Thus we infer that for a homogenous TZP ceramic, the critical phase transformation stress is close to the material's rupture strength. On the basis of the observation of a non-linear deformation before the phase transformation, we suggest that the TZP material may have a four step response to an increasing applied stress. This response consists of; (i) anelastic behaviour which may be explained by “ferroelastic domain switching” or another anelasticity theory; (ii) t → m phase transformation; (iii) microcracks emerging and then growing; (iv) final fracture of the material and a possible reverse transformation.
    Type of Medium: Electronic Resource
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