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  • Digitale Medien  (9)
  • 1995-1999  (8)
  • 1955-1959  (1)
Materialart
  • Digitale Medien  (9)
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Jahr
  • 1
    Digitale Medien
    Digitale Medien
    Springer
    Fresenius' journal of analytical chemistry 361 (1998), S. 564-568 
    ISSN: 1432-1130
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie
    Notizen: Abstract Problems of the evaluation of Auger depth profiles of thin SiC layers are caused by a number of effects. These are coverage with an adsorbate layer, preferential sputtering, the change of the peak shapes by chemical bonding states and the broadening of the interfaces by atomic mixing, Auger electron escape depth and original surface, interface and sputtering induced roughness. These effects are investigated and their contribution to the degradation of the depth profile is considered. Atomic mixing simulations including electron escape depth correction are able to reproduce the Auger depth profiles. In special cases the simulation must be convoluted with a resolution function caused by roughness. Thus quantitative conclusions about the layer structure, film composition, impurity distribution etc. are possible.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Springer
    Fresenius' journal of analytical chemistry 358 (1997), S. 355-357 
    ISSN: 1432-1130
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie
    Notizen: Abstract Thin carbonized SiC layers were investigated by Auger depth profiling. If the layers are smooth, ion induced mixing and Auger electron escape depth are the dominant factors that degrade the depth profiles. With the help of the Monte Carlo simulation code T-DYN by Biersack and an escape depth correction program, simulations can describe the measured Auger depth profiles. For quantitative comparison of simulations and measurements the Auger data must be quantified. The sputter time scale must be converted into depth using a known or best fitting sputter rate. The Auger peak-to-peak height must be converted into concentration using sensivity factors which do not include the sputter correction for selective sputtering. Since these sensitivity factors are normaly estimated at a sputtered single crystal, selective sputter correction must be excluded later. A good quantitative agreement was found for a simulated adsorbate/SiC/Si layer system with a measured Auger depth profile of a carbonized SiC layer on Si. This allows a description of the layer structure and of the composition of the layers.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    Springer
    Fresenius' journal of analytical chemistry 365 (1999), S. 195-198 
    ISSN: 1432-1130
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie
    Notizen: Abstract The concentrations and the lattice structure of silicon carbide layers and single crystals are influenced by ion beam sputtering. The influence of ion beam sputtering and primary ion energy on preferential sputtering is investigated by Auger measurements and T-DYN simulations. In dependence on primary ion energy C is enriched. Preferential sputtering increases with decreasing ion energy. Sputtering has a strong influence on the Auger peak shapes of SiC. Except for low ion energy and glancing incidence the peak shapes are independent of the primary ion energy. T-DYN simulations help to explain and understand the near-surface processes during sputtering of SiC. For ion energy dependence of preferential sputtering there is a good agreement of the T-DYN simulation and the Auger measurement.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    Springer
    Lung 114 (1955), S. 278-280 
    ISSN: 1432-1750
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Medizin
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 307-310 
    ISSN: 1618-2650
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie
    Notizen: Abstract The interpretation of sputter depth profiles can be simplified by use of computer simulations. Distortions caused by mixing effects and distortions caused by the information depth of the analytical method have to be distinguished. Atomic mixing and the information depth distort the depth profile simultaneously. Therefore, it is necessary to take into consideration a superposition of both distortion effects. The sputtering of a GaAs/A1As multilayer has been calculated on a personal computer with the binary collision approximation code T-DYN by Biersack and with an own layer model. A new computer code LAMBDA has been used for the investigation of the influence of the AES information depth in addition to atomic mixing and preferential sputtering. A comparison of the calculated and the measured depth profile explains the observed effects. Therefore conclusions can be drawn about the original elemental distribution in the sample from the measured depth profile.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 307-310 
    ISSN: 1618-2650
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie
    Notizen: Abstract The interpretation of sputter depth profiles can be simplified by use of computer simulations. Distortions caused by mixing effects and distortions caused by the information depth of the analytical method have to be distinguished. Atomic mixing and the information depth distort the depth profile simultaneously. Therefore, it is necessary to take into consideration a superposition of both distortion effects. The sputtering of a GaAs/A1As multilayer has been calculated on a personal computer with the binary collision approximation code T-DYN by Biersack and with an own layer model. A new computer code LAMBDA has been used for the investigation of the influence of the AES information depth in addition to atomic mixing and preferential sputtering. A comparison of the calculated and the measured depth profile explains the observed effects. Therefore conclusions can be drawn about the original elemental distribution in the sample from the measured depth profile.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 447-449 
    ISSN: 1618-2650
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie
    Notizen: Abstract Sputtering induced surface roughening is the dominant factor that degrades depth resolution in sputter profiling of polycrystalline film samples. Due to the dependence of the sputtering yield on the crystallographic orientation, ion beam incidence angle and composition, the local sputtering rate differs from grain to grain. A simple computer program based on a model of Marton and Fine can simulate such a roughness development within one layer, an improved version can even be applied for interfaces. A further extension of the program using a model of Hauffe includes effects like shadowing and enhanced peak erosion leading to surface smoothing.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 447-449 
    ISSN: 1618-2650
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie
    Notizen: Abstract Sputtering induced surface roughening is the dominant factor that degrades depth resolution in sputter profiling of polycrystalline film samples. Due to the dependence of the sputtering yield on the crystallographic orientation, ion beam incidence angle and composition, the local sputtering rate differs from grain to grain. A simple computer program based on a model of Marton and Fine can simulate such a roughness development within one layer, an improved version can even be applied for interfaces. A further extension of the program using a model of Hauffe includes effects like shadowing and enhanced peak erosion leading to surface smoothing.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 26 (1998), S. 1-8 
    ISSN: 0142-2421
    Schlagwort(e): AES depth profiling ; polycrystalline films ; sputtering-induced roughness ; AFM ; Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Physik
    Notizen: Sputtering-induced surface roughness is the main source of degradation of the depth resolution observed during depth profiling of polycrystalline metals. Atomic force microscopy (AFM) images of polycrystalline Al films at different mean sputtered depths are used to calculate both the depth distribution function (DDF) and the angular distribution function (ADF) of the evolving Al grain surfaces. The shape of the DDF changes with increasing mean sputtered depth, which implies the generation of two different roughness stages during sputtering. However, Auger electron spectroscopy (AES) depth profiling and AFM results show a linear increase of roughness vs. mean sputtered depth in the case of evaporated, polycrystalline Al films. A simple model is developed to calculate the AES intensity for a rough surface. The intensity behaviour as a function of the sputtering time depends on the ADF of microplanes and on the sample tilt angle and generally shows a marked decrease for high tilt angles. The sputtering rate distribution is determined using the DDF. A good fit of the AES depth profile of the Al film requires both the calculated intensity behaviour and the convolution using the DDF, which depends on the sputtering time. © 1998 John Wiley & Sons, Ltd.
    Zusätzliches Material: 9 Ill.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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