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  • Electronic Resource  (11)
  • 1995-1999  (8)
  • 1980-1984  (2)
  • 1955-1959  (1)
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  • Electronic Resource  (11)
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  • 1
    Electronic Resource
    Electronic Resource
    Auger investigations of thin SiC films (1998)
    Springer
    Fresenius' journal of analytical chemistry 361 (1998), S. 564-568 
    Details
    ISSN: 1432-1130
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Problems of the evaluation of Auger depth profiles of thin SiC layers are caused by a number of effects. These are coverage with an adsorbate layer, preferential sputtering, the change of the peak shapes by chemical bonding states and the broadening of the interfaces by atomic mixing, Auger electron escape depth and original surface, interface and sputtering induced roughness. These effects are investigated and their contribution to the degradation of the depth profile is considered. Atomic mixing simulations including electron escape depth correction are able to reproduce the Auger depth profiles. In special cases the simulation must be convoluted with a resolution function caused by roughness. Thus quantitative conclusions about the layer structure, film composition, impurity distribution etc. are possible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002160050949
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    AES depth profiles of thin SiC-layers – simulation of ion beam induced mixing (1997)
    Springer
    Fresenius' journal of analytical chemistry 358 (1997), S. 355-357 
    Details
    ISSN: 1432-1130
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Thin carbonized SiC layers were investigated by Auger depth profiling. If the layers are smooth, ion induced mixing and Auger electron escape depth are the dominant factors that degrade the depth profiles. With the help of the Monte Carlo simulation code T-DYN by Biersack and an escape depth correction program, simulations can describe the measured Auger depth profiles. For quantitative comparison of simulations and measurements the Auger data must be quantified. The sputter time scale must be converted into depth using a known or best fitting sputter rate. The Auger peak-to-peak height must be converted into concentration using sensivity factors which do not include the sputter correction for selective sputtering. Since these sensitivity factors are normaly estimated at a sputtered single crystal, selective sputter correction must be excluded later. A good quantitative agreement was found for a simulated adsorbate/SiC/Si layer system with a measured Auger depth profile of a carbonized SiC layer on Si. This allows a description of the layer structure and of the composition of the layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002160050428
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    The influence of ion beam sputtering on the composition of the near-surface region of silicon carbide layers (1999)
    Springer
    Fresenius' journal of analytical chemistry 365 (1999), S. 195-198 
    Details
    ISSN: 1432-1130
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The concentrations and the lattice structure of silicon carbide layers and single crystals are influenced by ion beam sputtering. The influence of ion beam sputtering and primary ion energy on preferential sputtering is investigated by Auger measurements and T-DYN simulations. In dependence on primary ion energy C is enriched. Preferential sputtering increases with decreasing ion energy. Sputtering has a strong influence on the Auger peak shapes of SiC. Except for low ion energy and glancing incidence the peak shapes are independent of the primary ion energy. T-DYN simulations help to explain and understand the near-surface processes during sputtering of SiC. For ion energy dependence of preferential sputtering there is a good agreement of the T-DYN simulation and the Auger measurement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002160051471
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Zur Therapie der Spondylitis tuberculosa (1955)
    Springer
    Lung 114 (1955), S. 278-280 
    Details
    ISSN: 1432-1750
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02180121
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    A differentiation-dependend polyisoprenol kinase in Dictyostelium discoideum (1982)
    Springer
    Molecular and cellular biochemistry 48 (1982), S. 183-189 
    Details
    ISSN: 1573-4919
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Medicine
    Notes: Summary Crude membrane fractions of Dictyostelium discoideum show the capacity to synthesize (1-3H)dolicholphosphate from (1-3H)dolichol. Formation of dolicholphosphate increased continuously over the first 15 min. The reaction rate was nearly linear with respect to the dolichol content up to 150 µM. The phosphate donor for the reaction is CTP. The optimum concentration of CTP is about 0,75 mM. The reaction is dependent on divalent metal ions, magnesium being more effective than calcium or manganese. The activity of the polyisoprenol kinase depends on the course of the early development. Maximum enzyme activities are present 4–6 h after the induction of the differentiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00421227
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  • 6
    Electronic Resource
    Electronic Resource
    The dependence of glycosyltransferases inDictyostelium discoideum on the structure of polyisoprenols (1981)
    Springer
    Molecular and cellular biochemistry 34 (1981), S. 65-72 
    Details
    ISSN: 1573-4919
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Medicine
    Notes: Summary Mannosyltransferases in plasma membranes ofDictyostelium discoideum synthesize polyisoprenyl-phosphomannosides from exogenous polyisoprenylphosphates and GDP-mannose. The specificity of the enzymes depends on the chain length and the saturation of the polyisoprenols. Maximum activity is reached by a α-saturated C-55 polyisoprenylphosphate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02354860
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Interpretation of sputter depth profiles by mixing simulations (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 307-310 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The interpretation of sputter depth profiles can be simplified by use of computer simulations. Distortions caused by mixing effects and distortions caused by the information depth of the analytical method have to be distinguished. Atomic mixing and the information depth distort the depth profile simultaneously. Therefore, it is necessary to take into consideration a superposition of both distortion effects. The sputtering of a GaAs/A1As multilayer has been calculated on a personal computer with the binary collision approximation code T-DYN by Biersack and with an own layer model. A new computer code LAMBDA has been used for the investigation of the influence of the AES information depth in addition to atomic mixing and preferential sputtering. A comparison of the calculated and the measured depth profile explains the observed effects. Therefore conclusions can be drawn about the original elemental distribution in the sample from the measured depth profile.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00322057
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Interpretation of sputter depth profiles by mixing simulations (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 307-310 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The interpretation of sputter depth profiles can be simplified by use of computer simulations. Distortions caused by mixing effects and distortions caused by the information depth of the analytical method have to be distinguished. Atomic mixing and the information depth distort the depth profile simultaneously. Therefore, it is necessary to take into consideration a superposition of both distortion effects. The sputtering of a GaAs/A1As multilayer has been calculated on a personal computer with the binary collision approximation code T-DYN by Biersack and with an own layer model. A new computer code LAMBDA has been used for the investigation of the influence of the AES information depth in addition to atomic mixing and preferential sputtering. A comparison of the calculated and the measured depth profile explains the observed effects. Therefore conclusions can be drawn about the original elemental distribution in the sample from the measured depth profile.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s0021653530307
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Simulation of sputter-induced roughness for depth profiling of thin film structures (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 447-449 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Sputtering induced surface roughening is the dominant factor that degrades depth resolution in sputter profiling of polycrystalline film samples. Due to the dependence of the sputtering yield on the crystallographic orientation, ion beam incidence angle and composition, the local sputtering rate differs from grain to grain. A simple computer program based on a model of Marton and Fine can simulate such a roughness development within one layer, an improved version can even be applied for interfaces. A further extension of the program using a model of Hauffe includes effects like shadowing and enhanced peak erosion leading to surface smoothing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s0021653530447
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Simulation of sputter-induced roughness for depth profiling of thin film structures (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 447-449 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Sputtering induced surface roughening is the dominant factor that degrades depth resolution in sputter profiling of polycrystalline film samples. Due to the dependence of the sputtering yield on the crystallographic orientation, ion beam incidence angle and composition, the local sputtering rate differs from grain to grain. A simple computer program based on a model of Marton and Fine can simulate such a roughness development within one layer, an improved version can even be applied for interfaces. A further extension of the program using a model of Hauffe includes effects like shadowing and enhanced peak erosion leading to surface smoothing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00322086
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    Paper (German National Licenses)
    Fulltext
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