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  • Electronic Resource  (76)
  • 1995-1999  (68)
  • 1975-1979  (8)
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Cellular and molecular life sciences 34 (1978), S. 1042-1043 
    ISSN: 1420-9071
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary In young spontaneously hypertensive rats (SHR), dopamine β-hydroxylase (DBH) and phenylethanolamine N-methyltransferase (PNMT) activities were examined in the brainstem nuclei. Activation of noradrenergic neurons in the locus coeruleus, A2 and spinal intermediolateral cell areas, resulting in enhanced sympathetic nervous activity in the periphery, initiates hypertension. Adrenergic neurons, unchanged in these and A1 cell areas of young SHR, are not involved in the development of hypertension in SHR.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1159-1164 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of silicon wafer surface orientation on very thin oxide quality were studied, testing Si(100) and (111) wafers. It has been found that the very thin oxide quality is determined by the silicon wafer surface orientation, and that when Si(111) is oxidized, SiO2/Si(111) interface microroughness increases as oxide becomes thicker than 10 nm, resulting in a degradation of oxide films quality on Si(111). When oxide thickness is decreased less than 10 nm, Si/SiO2 interface smoothness is maintained similar for Si(100) and (111) but SiO2/Si interface for Si(111) exhibits larger interface charges and larger threshold-voltage shift due to hot-electron injection than that for Si(100). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1554-1556 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Device length dependence of optical second-harmonic generation (SHG) in AlGaAs semiconductor quasiphase matched (QPM) waveguides with periodically crystal domain inverted gratings has been studied both experimentally and theoretically. It is found that the SHG power depends strongly on device length. An optimum device length for obtaining maximum SHG is shown for QPM-SHG devices with non-negligible waveguide propagation loss. It is also shown that this optimum device length can be predicted theoretically, making experimental optimization unnecessary. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The self-aligned formation of CoSi2 was achieved on the selective epitaxial growth (SEG) silicon layer on (001)Si inside 0.1–0.6 μm oxide openings prepared by electron beam lithography. The uniform, high quality SEG Si layer was grown by ultrahigh vacuum chemical vapor deposition at 560 °C with Si2H6. Self-aligned CoSi2 film without lateral growth of silicide was grown on the SEG Si layer by rapid thermal annealing at 700 °C in N2 ambient. The successful integration of the self-aligned CoSi2 and SEG of Si processes promises to be a viable process technology for the future deep submicron devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2220-2222 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study single-carrier traps in a GaAs/AlxGa1−xAs heterostructure by observing random telegraph signals (RTSs), which are caused by the traps having energy levels within a few kBT of the Fermi level. RTSs are observed in a split gate device while a narrow channel is shifted by independently controlling the voltage applied to each part of the split gate. This measurement reveals the variations of the energy levels of traps with the channel position. From these variations the locations and the energy distributions of the traps are demonstrated. The strength of the confinement potential around the trap is also discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3525-3527 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annihilation of grown-in defects by hydrogen annealing have been explained as the dissolution of oxygen precipitates, because it has been generally thought that grown-in defects in Czochralski silicon crystals are gigantic oxygen precipitates. However, it is necessary to re-examine the mechanism of the annihilation of the defects by hydrogen annealing, because recently it has been shown that the grown-in defects were voids of octahedral shape. In this letter, a simulation model is presented which describes the annihilation process of void defects by hydrogen annealing. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 999-1001 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of NiSi2 on (111)Si inside 0.1–0.6 μm oxide openings prepared by electron beam lithography has been studied by field emission scanning electron microscopy, transmission electron microscopy, and thin-film stress measurement. Striking effects of size and shape of deep submicron oxide openings on the growth of NiSi2 epitaxy were observed. Epitaxial growth of NiSi2 of single orientation on (111)Si was found to occur at a temperature as low as 400 °C inside contact holes of 0.2 μm or smaller in size. Contact holes were found to be more effective in inducing the epitaxial growth of NiSi2 of single orientation than that of linear openings of the same size. The effects of size and shape of lateral confinement on the epitaxial growth of NiSi2 on (111)Si are correlated with the stress level inside oxide openings. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2861-2863 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study carrier traps in a single electron transistor fabricated from a GaAs/AlxGa1−xAs heterostructure. In the heterointerface, there are many kinds of defects, which induce various trap levels in the band gap of AlxGa1−xAs or GaAs. The current through the transistor switches between two states because of trapping and detrapping of a single electron. The gate voltage dependencies of the switching indicate how the traps are spatially distributed. The possibility of the existence of a trap with multilevels is also discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of texture studies 28 (1997), S. 0 
    ISSN: 1745-4603
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Process Engineering, Biotechnology, Nutrition Technology
    Notes: Microscopic observation showed that a group of small air cells entrained during the early stage of mixing is the original cause of cell structure of bread. At the beginning of fermentation, about 3 × 108/m2 gas cells with diameters between 3 × 10−6 and 8 × 10−4 m were entrained in the dough. The distribution curve of cell size was approximately normal on a logarithmic scale. During fermentation and proofing, a great portion of carbon dioxide was released into cells larger than about 10−4 m in diameter that was equivalent to a few percentages of total number of gas cells. After baking, gas cells smaller than 10−4 m in diameter were not observed and the total number of cells in baked bread reduced to about 106/m2 with diameters between 10−4 and about 5 × 10−3 m. The critical cell size to expand generally agreed with the calculated value using an equation, rc’= 3s/E (re': critical radius to expand, s: surface tension, E: elasticity), and cited value of s and E.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1600-0625
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract Large amounts of homogeneous cells are not always available for in vitro studies of inflammatory skin disorders. Here we demonstrate that a novel cell line, termed YAA, has been established from peripheral blood mononuclear cells, which were separated by the Ficoll method, of a patient with atopic dermatitis. YAA cells were grown in suspension culture. The cytochemical staining showed a positive reaction for α-naphthyl butyrate esterase, which was completely inhibited by sodium fluoride, but a negative result for periodic acid-Schiff, peroxidase and alkaline phosphatase. A large population of YAA cells exhibited phenotype of CD33 and CD56 but neither of CD2 nor CD3. The phorbol ester-stimulated YAA cells produced a considerable amount of tumor neerosis factor-α. These findings suggest that YAA might be a monocytoid line with an additional phcnolype specific for natural killer cells.
    Type of Medium: Electronic Resource
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